Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.11a
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- Pages.410-411
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- 2008
Electrical Properties of CuPc Field-effect Transistor
CuPc를 이용한 전계효과트랜지스터의 전기적 특성
- Lee, Ho-Shik (Dongshin University) ;
- Park, Yong-Pil (Dongshin University)
- Published : 2008.11.06
Abstract
Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was