• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.291-297
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• 2011

This work investigated the microstructure and mechanical properties of 6063 Al alloy fabricated by shear-drawing (SD) technique where shear and drawing strains were combined together within a predetermined die. To find the optimum condition for sound deformation, three different dies having different inner angle and diameter of the exit channel were prepared. After single deformation of the present sample, the sound deformation took place without an abrupt failure of the sample if the inner angle would be greater than $135^{\circ}$ in this study, when the channel diameter of the SD die was reduced from 10 to 9 mm. Microstructural observation showed that the inner angle of $135^{\circ}$ was found to be more effective than that of $150^{\circ}$ in terms of the alignment of each grain to the shear direction imposed by SD method. In addition, the yield strength of the SD-deformed sample was twice higher than that of the initial counterpart while loosing ductility in tension.

• Bulletin of the Korean Chemical Society
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• v.29 no.10
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• pp.1993-1997
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• 2008

In the present work, Diels-Alder reaction of cyclopentadiene with ethylacrylate has been carried out by using two types of mesoporous solid acid catalysts (Al-MCM-41, Al-MCM-48) with different pore structures. The specific topology of Al-MCM-48 (cubic Ia3d structure composed of two independent 3-D channel systems) exhibit higher activity and stereo-control than those of Al-MCM-41 (hexagonal packing of 1-D channels). The physical properties of Al-MCM-48 catalyst, such as high accessibility of reactants to the acid sites, spatial confinement in the nanoscopic reactors, and 3-D channel network structure that are effective adsorption and diffusion of reactants, play a crucial role in the present study.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.149-158
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• 2007

Of all components of MCFC(molten carbonate fuel cell), corrosion of separator is one of the most decisive factor for commercializing of MCFC. In order to provide better understanding of corrosion behavior and morphology for gas channel of separator plate, post-analysis after cell operation for 1200 hours at $650^{\circ}C$ was performed by optical microscope, SEM and EPMA. Intergranular corrosion was observed on gas channel of separator plate. Corrosion product layer was identified as Fe-oxide, Cr-oxide and Ni-oxide by EPMA, and oxide thickness was measured with a $60{\mu}m-150{\mu}m$. Also, gas channel of separator was damaged by severe intergrannular attack with post analysis in consistent with immersion test. Moreover, pitting on the channel plate was observed with a depth of $18{\sim}24{\mu}m$. The results of immersion method are well agreement with post analysis measurements.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.13 no.5
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• pp.2529-2543
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• 2019

Scanning electron microscopy (SEM) image can link with the microscopic world through reflecting interaction between electrons and materials. The SEM images are easily subject to blurring distortions during the imaging process. Inspired by the fact that dark channel prior captures the changes to blurred SEM images caused by the blur process, we propose a method to evaluate the SEM images sharpness based on the dark channel prior. A SEM image database is first established with mean opinion score collected as ground truth. For the quality assessment of the SEM image, the dark channel map is generated. Since blurring is typically characterized by the spread of edge, edge of dark channel map is extracted. Then noise is removed by an edge-preserving filter. Finally, the maximum gradient and the average gradient of image are combined to generate the final sharpness score. The experimental results on the SEM blurred image database show that the proposed algorithm outperforms both the existing state-of-the-art image sharpness metrics and the general-purpose no-reference quality metrics.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.8
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• pp.187-193
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• 2002

Much research efforts have been made on the equal channel angular pressing (ECAP) which produces ultra-fine grains. Among many process parameters such as channel angles, frictions, die deformations and materials employed, the effects of material properties on the deformation behavior have been investigated. The finite element method has been used to investigate this issue.

• Journal of the Korean Society of Industry Convergence
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• v.21 no.4
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• pp.175-181
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• 2018

Stamping process and rubber pad forming process were performed to manufacture the bipolar plate for fuel cells. For that, a vacuum die casting process and a semi-solid forming process wherein liquid-state materials were used were adopted. After preparing the blank with the stainless steel thin plate having a thickness of 0.1 mm, the bipolar plate channel was formed with the stamping process and rubber pad forming process. The depth of the bipolar plate channel prepared by the stamping method was 0.45 mm and the depth of the bipolar plate channel prepared by the rubber pad forming process was 0.41 mm. Meanwhile, with the vacuum die casting and semi solid forming, the bipolar plate having a channel depth of 0.3 mm, same as the size of the die, could be formed.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.21-25
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• 2007

A two-dimensional TCAD MEDICI simulator was used to examine the voltage transfer characteristics, on-off switching properties and latch-up of a CMOS inverter as a function of the n-channel length and doping levels. The channel in a LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of a CMOS inverter. The digital logic levels of the output and input voltages were analyzed from the transfer curves and circuit operation. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.531-536
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• 2003

Equal channel angular pressing (ECAP) has been employed to produce materials with ultra-fine grains that have high strength and high corrosion resistance properties. In order to obtain super plastic deformation during ECAP, multipass angular pressing is frequently employed. In this paper, three-dimensional finite element analyses have been performed to investigate the deformation behavior of pure-Zr specimen and the effects of process parameters for equal channel multi-angular pressing (ECMAP) process. The results have been compared with some experimental results

• Transactions on Electrical and Electronic Materials
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• v.18 no.5
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• pp.250-252
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• 2017

High-performance full swing logic inverters were fabricated using amorphous 1 wt% Si doped indium-zinc-oxide (a-SIZO) thin films with different channel layer thicknesses. In the inverter configuration, the threshold voltage was adjusted by varying the thickness of the channel layer. The depletion mode (D-mode) device used a TFT with a channel layer thickness of 60 nm as it exhibited the most negative threshold voltage (-1.67 V). Inverters using enhancement mode (E-mode) devices were fabricated using TFTs with channel layer thicknesses of 20 or 40 nm with excellent subthreshold slope (S.S). Both the inverters exhibited high voltage gain values of 30.74 and 28.56, respectively at $V_{DD}=15V$. It was confirmed that the voltage gain can be improved by increasing the S.S value.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.357-364
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• 2015

In this work, we investigate the quantum effects exhibited from ultra-thin GAA(gate-all-around) Nanowire FETs for Sub 14nm Technology. We face designing challenges particularly short channel effects (SCE). However traditional MOSFET SCE models become invalid due to unexpected quantum effects. In this paper, we investigated various performance factors of the GAA Nanowire FET structure, which is promising future device. We observe a variety of quantum effects that are not seen when large scale. Such are source drain tunneling due to short channel lengths, drastic threshold voltage increase caused by quantum confinement for small channel area, leakage current through thin gate oxide by tunneling, induced source barrier lowering by fringing field from drain enhanced by high k dielectric, and lastly the I-V characteristic dependence on channel materials and transport orientations owing to quantum confinement and valley splitting. Understanding these quantum phenomena will guide to reducing SCEs for future sub 14nm devices.