• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1338-1342
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• 2005

We have synthesized an $Eu^{2+}$-activated $Sr_3MgSi_2O_8$ blue phosphor and $Ba_2SiO_4$ green phosphor and $Ba^{2+}$ co-doped $Sr_3SiO_5$ red phosphor investigated an attempt to develop white LEDs by combining it with a GaN blue LED $chip(\lambda_{em}=405 nm)$. Three distinct emission bands from the GaN-based LED and the $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu)$ phosphor are clearly observed at 460nm, 520 nm and at around 600 nm, respectively. These three emission bands combine to give a spectrum that appears white to the naked eye. Our results show that GaN (405 nm chip)-based $(Sr_3MgSi_2O_8:Eu\; +\; Ba_2SiO_4:Eu\; +\; Ba^{2+}\; co-doped\; Sr_3SiO_5:Eu) exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.67-70
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• 2003

합성된 GaN, ZnO 나노선 네트워크를 이용하여 전류-전압 특성을 조사하고 정류성 특징을 가지는 나노선네트워크에 대해서는 다이오드의 이상지수를 측정하여 기존의 다이오드의 특성과 비교 분석하고 간단한 광 특성 측정을 하여 광전소자로서의 가능성도 확인해 보았다.

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.388-392
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• 2005

The $Zr_{57}V_{36}M_7$ getter alloy was prepared by Fe substituting Ga or Y for Fe on $Zr_{57}V_{36}M_7$ getter alloy(St707), and the activation temperatures and the hydrogen a sorption speeds of these alloys were investigated. The activation temperatures of these alloys were estimated from the ultimate pressure-temperature curve and lowered about $100\~200\;K$ compared to $Zr_{57}V_{36}M_7$, fetter alloy(St707). However, final pressures at fully activated temperature were increased with substitution of Fe by Ga and Y on $Zr_{57}V_{36}M_7$ getter alloy. The hydrogen sorption speeds of these alloys measured by an orifice method were decreased about $0.460\~0.586liter/sec$ g compared to $Zr_{57}V_{36}M_7$ getter alloy.

• Journal of the Institute of Convergence Signal Processing
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• v.13 no.4
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• pp.207-210
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• 2012

Genetic algorithms(GA) are well known and very popular stochastic optimization algorithm. Although, GA is very powerful method to find the global optimum, it has some drawbacks, for example, premature convergence to local optima, slow convergence speed to global optimum. To enhance the performance of GA, this paper proposes an adaptive partitioning-based genetic algorithm. The partitioning method, which enables GA to find a solution very effectively, adaptively divides the search space into promising sub-spaces to reduce the complexity of optimization. This partitioning method is more effective as the complexity of the search space is increasing. The validity of the proposed method is confirmed by applying it to several bench mark test function examples and the optimization of fuzzy controller for the control of an inverted pendulum.

• Korean Journal of Materials Research
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• v.12 no.3
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• pp.195-199
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• 2002

Planar Hall effect of ferromagnetic GaMnAs thin films was investigated for the first time. The films were grown in an optimized growth condition via molecular beam epitaxy at low temperatures. For the optimization of the growth conditions, we used reflection high-energy electron diffraction, electrical conductivity, double crystal x-ray diffraction, and superconducting quantum interference device measurements techniques. We observed that the difference between the longitudinal resistance and the transverse resistance matches the planar Hall resistance. The ratio of the planar Hall resistance at saturation magnetic field to that at zero reached above 500%.

• Molecules and Cells
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• v.19 no.3
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• pp.334-341
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• 2005

Plants are sessile and rely on a wide variety of growth hormones to adjust growth and development in response to internal and external stimuli. We have identified a gene, designated NAN, encoding a basic helix-loop-helix (bHLH) transcription factor that regulates cell elongation and seed germination in plants. NAN has an HLH motif in its C-terminal region but does not have any other discernible homologies to bHLH proteins. A bipartite nuclear localization signal is located close to the HLH motif. An Arabidopsis mutant, nan-1D, in which NAN is activated by the insertion of the 35S enhancer, exhibits growth retardation with short hypocotyls and curled leaves. It is also characterized by reduced seed germination and apical hook formation, symptomatic of GA deficiency or disrupted GA signaling. The phenotypic effects of nan-1D were increased by treatment with paclobutrazol (PAC), an inhibitor of gibberellic acid (GA) biosynthesis. NAN is constitutively expressed throughout the life cycle. Our observations indicate that NAN has a housekeeping role in plant growth and development, particularly in seed germination and cell elongation, and that it may modulate GA signaling.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.201-203
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• 2018

최근 휴대용 어댑터의 동향은 고주파수 전력 컨버터 설계를 통한 어댑터의 고효율화 및 소형화의 중요성을 강조하고 있다. 그러나 기존 준공진형(Quasi Resonant, QR) 플라이백 컨버터는 하드 스위칭 동작으로 고주파수 구동에 한계가 있으며, 누설 인덕턴스 에너지에 의한 손실로 인해 고효율을 달성하기가 어렵다. 반면, 능동 클램프 플라이백(Active Clamp Flyback, ACF) 컨버터는 ZVS(Zero Voltage Switching) 동작을 하여 고주파수 구동에 유리하고, 누설 인덕턴스 에너지를 입력으로 회기 시킴으로써 손실을 저감할 수 있다. 또한, 경계전류모드(Boundary Conduction Mode, BCM) 동작에서의 손실분석을 기반으로, 반도체 특성이 우수하여 고주파수 동작에 유리한 GaN-FET를 적용하고 최적 설계를 진행함으로써 고효율 및 고전력밀도를 달성하였다. 따라서 본 논문에서는 GaN-FET를 기반으로 하는 고효율 및 고전력밀도 BCM ACF 컨버터의 최적 설계 방안을 제시하고 65W급 시작품의 실험결과를 통해 이를 검증한다.

• Proceedings of the KIEE Conference
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• 2000.07d
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• pp.2479-2481
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• 2000

It is the time-varying dissolved oxygen(DO) dynamics that requires controlling for maintaining the DO concentration in the aeration tank. Many linear controllers have thus been applied. Because of the nonlinearity of the oxygen transfer function together with the time-varying respiration rate, however, the linear controllers are found to poorly perform in many cases. To overcome this limitation, a number of advanced controlling techniques have been developed and applied. In this study, designed GA-PI Controller using genetic algorithm(GA). Genetic algorithms(GAs) are search algorithms based on the mechanics of natural selection and natural genetics. As result of computer simulation, GA-PI controller shows the better control performance especially under the condition of the continuously changing DO set-point. This result represents that GA-PI controller can be a good measure to control the DO concentration in the SBR process which requires the sequential DO set-point change to accomplish the nitrification and denitrification in a single reactor.

• Journal of Plant Biotechnology
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• v.48 no.3
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• pp.186-192
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• 2021

The roots of Korean ginseng (Panax ginseng) have a long history of usage as a medicinal drug. Ginsenosides, a group of triterpenioid saponins in ginseng, have been reported to show important pharmacological effects. Many studies have attempted to identify the ginsenoside synthesis pathways of P. ginseng and to increase crop productivity. Recent studies have shown that exogenous gibberellin (GA) treatments promote storage root secondary growth by integration of the modulating cambium stem cell homeostasis with a secondary cell wall-related gene network. However, the dynamic regulation of ginsenoside synthesis-related genes and their contents by external signaling cues has been rarely evaluated. In this study, we confirmed that GA treatment not only enhanced the secondary growth of P. ginseng storage roots, but also significantly enriched the terpenoid biosynthesis process in RNA-seq analysis. Consistently, we also found that the expression of most genes involved in the ginsenoside synthesis pathways, including those encoding methylerythritol-4-phosphate (MEP) and mevalonate (MVA), and the saponin content in both leaves and roots was increased by exogenous GA application. These results can be used in future development of biotechnology for ginseng breeding and enhancement of saponin content.

• Journal of the Korean Chemical Society
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• v.48 no.4
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• pp.371-378
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• 2004

The $SrGa_2S_4:Eu^{2+}$ green emitting phosphor has been studied as a luminous device for CRT (Cathode Ray Tube) or FED (Field Emission Display) and EL (Electroluminescence). This phosphor, also, is under noticed for LED (Lighting Emitting Diode) phosphor, which makes use of excitation characteristics of long wavelength region. The $SrGa_2S_4:Eu^{2+}$ phosphor was prepared generally conventional synthesis method using flux. However, this method needs high heat-treated temperature, long reaction time, complex process and harmful $H_2S$or $CS_2$ gas. In this works, therefore, we have synthesized $SrGa_2S_4:Eu^{2+}$ using SrS, $Ga_2S_3$, and EuS as starting materials, and the mixture gas of 5% H2/95% N2 was used to avoid the $H_2S$or $CS_2$. We investigated the luminescence characteristic of $SrGa_2S_4:Eu^{2+}$ phosphor prepared in various synthesis conditions, performed post-treatment and sieving process for application to LED.