• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.181-182
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• 2007

In this paper, we investigated the diffraction grating efficiency on $Ge_{75}Se_{25}$ and Ag-doped amorphous chalcogenide $Ag/Ge_{75}Se_{25}$ thin film for used to volume hologram. The film thickness was 2 um and diffraction efficiency was obtained from He-Ne (632.8nm) and DPSS(532nm) (P:P) polarized laser beam on $Ge_{75}Se_{25}$ and Ag/$Ge_{75}Se_{25}$ thin films. As a result. for the films, the diffraction efficiency on Ag/$Ge_{75}Se_{25}$ double layer, was better than single $Ge_{75}Se_{25}$ thin films. The recording speed of DPSS laser is higher than that of He-Ne laser.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.154-155
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• 2007

PRAM(Phase-Change RAM) is a promising memory that can solve the problem of conventional memory and has the nearly ideal memory characteristics. We reviewed the issues for high density PRAM integration. Writing current reduction is the most urgent problem for high density PRAM realization. So, we studied new constitution of $Ge_1Se_1Te_2$ chalcogenide material and presented the method of reducing the contact size between $Ge_1Se_1Te_2$ and electrode. A small-contact-area electrode is used primarily to supply current into and minimize heat loss from the chalcogenide. In this letter, we expect the method of reducing the contact size between $Ge_1Se_1Te_2$ and electrode to decrease writing current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.144-150
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• 2003

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism using the irradiation with Polarized He-Ne laser light in the Ag/As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ multi-layer. Multilayer structures were formed by alternating metal(Ag) and chalcogenide(As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$) thin film. The Ag Polarized photodoping result in reducing the time of saturation anisotropy and increasing the sensitivity of linearly anisotropy intensity As the results, the Ag polarized photodoping will be have a capability of new method that suggests more improvement of photoinduced anisotropy property in the thin films of chalcogenide.ogenide.ide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.118-119
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• 2006

In the present work, we investigate the basic physical and thermal properties and electrical resistance change due to phase change in chalcogenide-based $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films. The phase transition from amorphous to crystalline states, and vice versa, of $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films by applying electrical pulses have been studied. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• Ceramist
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• v.10 no.3
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• pp.34-47
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• 2007

Photoinduced phenomena in non-crystalline insulators and semiconductors, specifically oxide and chalcogenide glasses, are briefly reviewed with some comments.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.126-127
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• 1994

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.239.1-239
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• 2003

• Bulletin of the Korean Chemical Society
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• v.20 no.5
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• pp.605-608
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• 1999

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.213-217
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• 2012

In this study, we have investigated the holographic grating formation on Ag-doped amorphous As-Ge-Se-S thin films. The dependence of diffraction efficiency as afunction of Ag layer thickness has been investigated in this amorphous chalcogenide films. Holographic gratings was formed using [P:P] polarized Diode Pumped Solid State laser (DPSS, 532.0 nm). The diffraction efficiency was obtained by +1st order intensity. The results were shown that the diffraction efficiency of Ag/AsGeSeS double layer thin films for the Ag thickness, the maximum grating diffraction efficiency using 60 nm Ag layer is 0.96%.