Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Holographic Properties in Amorphous As-Ge-Se-S with Ag Thickness

Ag의 두께에 따른 비정질 As-Ge-Se-S의 홀로그래픽 특성연구

  • Received : 2012.02.08
  • Accepted : 2012.02.17
  • Published : 2012.03.01
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Abstract

In this study, we have investigated the holographic grating formation on Ag-doped amorphous As-Ge-Se-S thin films. The dependence of diffraction efficiency as afunction of Ag layer thickness has been investigated in this amorphous chalcogenide films. Holographic gratings was formed using [P:P] polarized Diode Pumped Solid State laser (DPSS, 532.0 nm). The diffraction efficiency was obtained by +1st order intensity. The results were shown that the diffraction efficiency of Ag/AsGeSeS double layer thin films for the Ag thickness, the maximum grating diffraction efficiency using 60 nm Ag layer is 0.96%.

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References

  1. S. J. Zilker, T. Bieringer, D. Haarer, R. S. Stein, J. W. V. Egmond, and S. G. Kostromine, Adv. Mater., 10, 855 (1998). https://doi.org/10.1002/(SICI)1521-4095(199808)10:11<855::AID-ADMA855>3.0.CO;2-H
  2. Y. Ohmachi and T. Igo, Appl. Phys. Lett., 20, 506 (1972). https://doi.org/10.1063/1.1654036
  3. T. Todorov, L. Nikolova, and N. Tomova, Appl. Opt., 23, 4309 (1984). https://doi.org/10.1364/AO.23.004309
  4. Y. Utsugi and S. Zembutsu, Opt. Commun., 17, 28 (1976). https://doi.org/10.1016/0030-4018(76)90172-3
  5. L. Nikolova, T. Todorov, M. Ivanov, F. Andruzzi, S. Hvilsted, and P. S. Ramanujam, Appl. Opt., 35, 3835 (1996). https://doi.org/10.1364/AO.35.003835
  6. P. Hariharan, "Optical Holography", Cambridge University Press, p. 162 (1984).
  7. Tomas Wagner, Miloslav Frumar, J. of Non-Cryst. Solids, 128, 197 (1991). https://doi.org/10.1016/0022-3093(91)90514-7
  8. L. Y. Ju, H. B. Chung, J. Kor. Inst. Electric. Electron. Mater. Eng., 20, 240 (2007).
  9. J. Y. Chun, S. H. Park, H. Y. Lee, and H. B. Chung, J. Kor. Inst. Electric. Electron. Mater. Eng., 11, 749 (1998).
  10. C. H. Yeo, S. J. Jang, J. I. Park, H. Y. Lee, and H. B. Chung, J. Kor. Inst. Electric. Electron. Mater. Eng., 12, 1192 (1999).
  11. Y. W. Koo, J. H. Kim, W. J. Cho, and H. B. Chong, Microelectron. Eng., 84, 1652 (2007). https://doi.org/10.1016/j.mee.2007.01.245
  12. J. T. Lee, C. H. Yeo, and H. B. Chong, Trans. Electr. Electron. Mater., 5, 34 (2004). https://doi.org/10.4313/TEEM.2004.5.1.034
  13. F. Smektala, C. Quemard, V. Couderc, and A. Barthelemy, J. Non-Cryst. Solids, 274, 232 (2000). https://doi.org/10.1016/S0022-3093(00)00215-5
  14. K. Ogusu, J. Yamasaki, S. Maeda, M. Kitao, and M. Minakata, Opt. Lett., 29, 265 (2004). https://doi.org/10.1364/OL.29.000265