• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2000.04a
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• pp.159-162
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• 2000

Wrinkles and shape distortions are generated during the forming of B-pillar(or center pillar) which is a component of the automobile side-frame. The stretch flanging modes at the joining part of the B-pillar and the roof-rail or the side-still give rise to forming problems when taior-welded blanks are applied to the side-frames. The authors simplified B-pillar lower part to T shaped section to investigate the forming behaviors. Three of die step locations and two of blank types were tested to show the effects of weld line locations and edge conditions on he forming of tailor welded blanks. The heights of body wrinkles and the strain distribution in the stretch flanged area were measured and compared.

• Journal of architectural history
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• v.14 no.1 s.41
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• pp.71-87
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• 2005

4 royal palaces are currently remained from capital city (Seoul) of 'Cho-Sun(朝鮮)' period. In these palaces, 'Main hall of Royal Palace(正殿)' is the center of the Royal Palaces. The 'Main hall of Royal Palace' of the Royal Palace was the best building of that time. Therefore there were many studies about the 'Main hall of Royal Palace'. But these studies were individual studies of these 'Main hall of Royal Palace'. Therefore, this study is to analyze and compare 4 'Main hall of Royal Palace' of the Royal palaces. It is to study the proportion regarding the Diameter of the pillar, the Height, the pillar and pillar Interval's Distance, and the arrangement of 'Kong-Po(bracket sets)'. With these studies, it is to prove that the 'Main hall of Royal Palace' is the building which high construction technique of this time is expressed. Result of this study is as followings; First, the proportion of pillar height(H) to its diameter(D) average from H=8.0 to 8.5D. Only the Myeong-Jeong-Jeon omitted the 'Go-Ju(高柱)' in the 'Toi-Kan (退間)' to place Ea-Jwa(御座). Second, Second, the proportion of diameter of the pillar of 'Eoi-Bu-Pyeong-Ju(外部平柱)' and 'Nae-Jin-Go-Ju(內陣高柱)' average D1(Diameter of 'Eoi-Bu-Pyeong-Ju') =0.91D2 (Diameter of 'Nae-Jin-Go-Ju'). In regards to the height, the single floor 'Main hall of Royal Palace' and double floor 'Main hall of Royal Palace' seems to be different. The height proportion of the double floor 'Main hall of royal palace' is H1(Height of 'Eoi-Bu-Pyeong-Ju')=0.34H2(Height of 'Nae-Jin-Go-Ju') and single floor 'Main hall of Royal Palace' has a proportion of H1=0.62H2. Third, in Geun-Jeong-Jeon, with the proportion of height and diameter of the pillar, interval's distance between pillars and diameter, the pillar interval distance and height, of 'Ea-kan(御間)' from the 'Toi-Kan' is different from 'Main hall of Royal Palace'. This is because the structure of 'Toi-Kan' of Geun-Jeong-Jeon is not stable. In order to reinforce this, 'Gui-Go-Ju(隅高柱)' of the Geun-Jeong-Jeon jut out $4{\sim}7%$ more compared to In-Jeong-Jeon. Fourth, when comparing double floor 'Main hall of royal palace' of Geun-Jeong-Jeon and In-Jeong-Jeon, based on distance of 'Eoi-Bu-Pyeong-Ju' and 'Nae-Jin-Go-Ju' of lower level, the 'Sang-Bu-Pyeong-Ju(上部平柱)' of Geun-Jeong-Jeon jut out $4{\sim}7%$ more compared to the In-Jeong-Jeon and also It becomes thicker. Fifth, the arrangement of 'Kong-Po' on the front row of 'Gan(間)' had to do with the change of side 'Gan'. Even though the Geun-Jeong-Jeon and the In-Jeong-Jeon were double floors, the arrangement of the 'Kong-Po' is different because the number of side bay is different.

• Journal of the Semiconductor & Display Technology
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• v.13 no.3
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• pp.45-50
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• 2014

In this paper, we propose a super-junction MOSFET (SJ MOSFET) fabricated through a simple pillar forming process by varying the Si epilayer thickness and doping concentration of pillars using SILVACO TCAD simulation. The design of the SJ MOSFET structure is presented, and the doping concentration of pillar, breakdown voltage ($V_{BR}$) and drain current are analyzed. The device performance of conventional Si planar metal-oxide semiconductor field-effect transistor(MOSFET), Si SJ MOSFET, and SiGe SJ MOSFET was investigated. The p- and n-pillars in Si SJ MOSFET suppressed the punch-through effect caused by drain bias. This lead to the higher $V_{BR}$ and reduced on resistance of Si SJ MOSFET. An increase in the thickness of Si epilayer and decrease in the former is most effective than the latter. The implementation of SiGe epilayer to SJ MOSFET resulted in the improvement of $V_{BR}$ as well as drain current in saturation region, when compared to Si SJ MOSFET. Such a superior device performance of SiGe SJ MOSFET could be associated with smaller bandgap of SiGe which facilitated the drift of carriers through lower built-in potential barrier.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.903-906
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• 2011

The electroplating and electro-less plating methods have been applied for the high density chip interconnect of the Copper Pillar Tin Bump (CPTB) preparation. The CPTB was prepared, which had been electroplated about $100{\mu}m$ pitch of copper layer firstly, and then the Tin layer was deposited on the copper pillar surface to protect the oxidation of it. It was also very important to get uniform thickness of electroplated copper layer, though it was difficult and sensitive. In order to control the thickness distribution, it was examined that the current separating disk of Insulating Gate with a hole in the center was installed between electrodes. The current flows through the center hole of the Insulating Gate in the cylindrical electroplating bath and the other parts were blocked to protect current flowing. The main current flowed through the center hole of the Insulating Gate directly to the opposite electrode of wafer disk. As the results, it was verified that the copper layer was thick in the center part of wafer disk with distribution of thinner to the outer part toward edge.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.6
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• pp.301-308
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• 2010

A steel with chemical composition, 0.22% C, 0.25% Si, 1.26% Mn, 0.22% Cr, 0.04% Ti, 0.0042% B, and a microstructure of ferrite and spheroidized cementite has been press-formed to automotive center pillar followed by local-hardening heat-treatment. Hardness, tensile properties, fractography, microstructure and surface roughness of local-hardening heat-treated automotive center pillar have been examined. The directly heated and quenched area had fully martensitic structure with Vickers hardenss in the range of 500 to 510. The heat affected area close to the directly heated area showed dual-phase structure of ferrite and martensite. The width of the heat-treated and heat-affected areas after the local-hardening heat treatment was ranging from 32 mm to 50 mm. The surface of the local-hardening heat-treated center pillar revealed some temper color as a consequence of the oxidation during the heat treatment, but the surface roughness was not affected by the local-hardening heat treatment.

• Tunnel and Underground Space
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• v.28 no.2
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• pp.170-185
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• 2018

The effect of fault on the stability of the closely-spaced twin tunnels located in fault zones was investigated by numerical analyses and scaled model tests on condition of varying widths, inclinations and material properties of fault. When obtaining the strength/stress ratios of pillar between twin tunnels, three different stresses were used which were measured at the middle point of pillar, calculated to whole average along the pillar section and measured at the left/right edges of pillar. Among them, the method by use of the left/right edges turned out to be the most conservative stability estimation regardless of the presence of fault and reflected the excavating procedures of tunnel in real time. It was also found that the strength/stress ratios of pillar were decreased as the widths and inclinations of fault were increased and as the material properties of fault were decreased on condition using the stresses measured at the left/right edges of pillar. As a result of scaled model tests, it was found that the model with fault showed less crack initiating pressure than the model without fault. As the width of fault was larger, tunnel stability was decreased. The fault had also a great influence on the failure behavior of tunnels, such as the model without fault showed failure cracks generated horizontally at the left/right edges of pillar and at the sidewalls of twin tunnels, whereas the model with fault showed failure cracks directionally generated at the center of pillar located in the fault zone.

• Journal of Korea Society of Industrial Information Systems
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• v.17 no.7
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• pp.43-50
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• 2012

Database for the information of the shape accuracy is constructed with the finite element stamping analysis of the center pillar member. Analyses are carried out in order to investigate the effect of tool compensation on the product quality previously performed by an expert in the press shop. The compensation procedure is provided with three sequences for improving shape accuracy of the member by reducing the amount of springback. The analysis result shows that shape inaccuracy in the product is caused by sagging and twisting phenomena from displacement of the section part due to excessive amount of springback. From the database with springback analyses, design modification guidelines are proposed for improving the shape accuracy. The guideline is directly applied to a member with the similar shape and the sound product is obtained successfully reducing the amount of springback.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.69-77
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• 2016

We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial energy at relatively lower temperature and pressure compared to conventional micro-scale Cu direct bonding. We confirmed for the first time that 4.3 million electrodes per die are successfully connected in series with the joining yield of 100%. The joining resistance of CNP bundle with $80{\mu}m$ height is around 30 m for each pair of $10{\mu}m$ dia. electrode. Capacitance value of CNP bundle with $3{\mu}m$ length and $80{\mu}m$ height is around 0.6fF. Eye-diagram pattern shows no degradation even at 10Gbps data rate after the lamination of anisotropic conductive film.

• Asian Journal for Public Opinion Research
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• v.4 no.1
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• pp.1-30
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• 2016

• Transactions of Materials Processing
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• v.24 no.5
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• pp.354-360
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• 2015

AHSS (Advanced High Strength Steels) has been increasingly employed by global automotive OEMs in order to satisfy strengthened regulations and reduce weight for fuel efficiency. Hot stamping using boron steels in AHSS increases not only formability but also strength. The typical hot-stamped automotive part is the center pillar that is critical for vehicle side impact. However, the hot-stamped part can be risky for the passenger safety caused by brittle fracture under a vehicle collision. The high power diode laser is suitable for the heat treatment giving AHSS increased elongation that prevents brittle fracture in car crash. Therefore, local softening by laser heat treatment for energy absorption area on the hot-stamped part improves crash-worthiness.