• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.371-371
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• 2011

본 연구에서는 황화납(PbS)과 황화카드뮴(CdS)을 감응물질로 하는 양자점 감응형 태양전지를 만들고 효율을 측정하였다. Sputter를 이용하여 고진공의 상태에서 산화아연(ZnO) film을 seed layer로 증착한 후 수열합성법으로 ZnO 나노선을 합성한다. 합성된 나노선을 successive ionic layer adsorption and reaction (SILAR) 법으로 PbS, CdS 양자점을 합성하고 이를 주사전자 현미경(SEM), X-선 회절(XRD)을 통해 확인하였다. 또한 PbS와 CdS의 co-sensitizer를 합성하고 diffused reflectance spectra (DRS)를 측정함으로써 넓은 범위의 광흡수도를 확인할 수 있었다. Co-sensitizer의 합성 방법을 달리하여 PbS/CdS를 합성한 후 각각의 효율을 측정해보고, 더 높은 효율을 내기 위한 방안에 대해 고찰하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.81-81
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• 2005

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.352-356
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• 1995

Native oxide layer on MCT (HgCdTe) has been grown uniformly in H$\_$2/O$\_$2/ electrolyte through anodic oxidation method. It has been determined that anodic oxidation of HgCdTe in H$\_$2/O$\_$2/ electrolyte proceeds immediately with the input of constant currents without any induction time required for anodic oxideation in KOH electrolyte. Oxide layer with the resistivity of 2*10$\^$10/.ohm.cm and the refractive index of 2.1 suggested the possibility of well matching combination layer with ZnS for MCT MIS device. XPS results indicated that the major components of oxide layer grown in H202 solution is TeO$\_$2/ with the possibility of small amounts of CdTeO$\_$3/.

• ETRI Journal
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• 제37권6호
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• pp.1129-1134
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• 2015

In this article, a study of a flower like nanostructured CdS buffer layer for improving the performance of a submicron-thick $CuIn_{1-x}Ga_xSe_2$ (CIGS) solar cell (SC) is presented. Both its synthesis and properties are discussed in detail. The surface reflectance of the device is dramatically decreased. SCs with flower like nanostructured CdS buffer layers enhance short-circuit current density, fill factor, and open-circuit voltage. These enhancements contribute to an increase in power conversion efficiency of about 55% on average compared to SCs that don't have a flower like nanostructured CdS buffer layer, despite them both having the same CIGS light absorbing layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.56-58
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• 1989

All-polycrystalline Cd$_1$-xZnxS/CdTe solar cells have been fabricated by coating CdTe slurries with 4.5 wt% of CdCl$_2$on the sintered Cd$_1$-xZnxS films and by sintering CdTe layer at 6$25^{\circ}C$ for lh in nitrogen atmosphere. Solar efficiency of the sintered Cd$_1$-xZnxS/CdTe solar cells increases as the Zn content increases up to x=0.06 and then decreases with further increase in the Zn content. A solar efficiency of 12.5% under a solar intensity of 76mW/$\textrm{cm}^2$ was observed in a Cd 0.94 Zn0.06S/CdTe solar cell. By optimizing the amount of CdCl$_2$in the slurry and sintering conditions, it is possible to produce Cd$_1$-xZnxS/CdTe solar cells with efficiency higher than 12%.

• 신재생에너지
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• 제1권1호
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• pp.32-36
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• 2005

We studied the optoelectronic properties of hybrid solar cells formed by mixing cadmium sulfide [CdS] nanorods with a conjugated polymer, poly-2-methoxy, 5-[2'-ethy[hexyloxy]-1,4-p-phenylenevinylene[MEH-PPV]. CdS nanorods were grown vertically on Ti substrates by electrochemical deposition through a porous alumina template. Absorption spectrum of the composite layer was the same as the superposition of the absorption spectrum of each individual layer. The photoluminescence signal from MEH-PPV film was reduced as a result of the mixing. The energy conversion efficiency of MEH-PPV improved from $0.0012\%$ to about $0.60\%$ when combined with the vertically aligned CdS nanorods.

• 한국표면공학회지
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• 제41권1호
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• pp.28-32
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• 2008

In this paper CdS thin films, which were widely used window layer of the CdS/CdTe and the CdS/$CuInSe_2$ heterojunction solar cell, were grown by chemical bath deposition, which is a very attractive method for low-cost and large-area solar cells, and the structural, optical and electrical properties of the films was studied. As the thiourea/$CdAc_2$ mole ratio was increased, the deposition rate of CdS films prepared by CBD was increased due to increasing reaction velocity in solution and the optical bandgap was increased at higher thiourea/$CdAc_2$ mole ratio due to larger grain size and continuous microstructure. The minimum resistivity of the films was at thiourea/$CdAc_2$ mole ratio of 3.

• 전기화학회지
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• 제10권4호
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• pp.262-264
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• 2007

This paper describes a two-step approach for the electrochemical deposition of CdZnS thin films on the polycrystalline Au electrode. Initially, an Au substrate is electrochemically modified with a sulfur layer. In the second step, the layer is electroreduced to $S^{2-}$ in the electrolyte dosed with the requisite amount of $Cd^{2+}$ and $Zn^{2+}$ ions to generate CdZnS films in situ. This approach was validated using a combination of linear sweep voltammetry and electrochemical quartz crystal microgravimetry. Thus synthesized CdZnS thin films have different composition depending on the composition of electrolytes. CdZnS thin films are characterized by energy-dispersive X-ray analysis and Raman spectroscopy.

• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1023-1027
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• 2009

Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at $H_2/(Ar+H_2)$ flow ratios on polyethersulfon (PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and $2.7\;{\times}\;10^5\;{\Omega}/square$, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the $Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.620-628
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• 2008

Cadmium sulphide (CdS) thin film, which is used as a window layer of heterojunction solar cell, on the glass substrate was deposited by vacuum evaporation. Effects of deposition conditions such as the source and substrate temperature on electrical and optical properties of CdS films was investigated. As the source temperature was increased, the deposition rate of CdS films was increased. In addition, the optical transmittance and the electrical resistivity of CdS films were decreased as the source temperature was increased. This results were attributed to the increase of excess Cd amount in the film. The crystal structure of CdS films exhibited the hexagonal phase with preferential orientation of the (002) plane. As the substrate temperature was increased, the crystal structure of CdS films was improved and the resistivity of the films was increased due to the decrease of excess Cd in film.