• Title/Summary/Keyword: CdS films

Search Result 250, Processing Time 0.026 seconds

Formation of Ohmic Contact in P-Type CdTe Using Cu2 Te Electrode and Its Effect on the Photovoltaic Properties of CdTe Solar Cells (Cu2Te 배면 전극을 이용한 p-type CdTe 태양전지의 ohmic contact 형성 및 CdTe 태양전지의 광전압 특성)

  • Kim, Ki-Hwan;Yun, Jae-Ho;Lee, Doo-Youl;Ahn, Byung-Tae
    • Korean Journal of Materials Research
    • /
    • v.12 no.12
    • /
    • pp.918-923
    • /
    • 2002
  • In this work, CdTe films were deposited on CdS/ITO/glass substrate by a close spaced sublimation (CSS) method. A $Cu_2$Te layer was deposited on the CdTe film by evaporating $Cu_2$Te powder. Then the samples were annealed for p+ ohmic contact. TEM and XRD analysis showed that $CdTe/Cu_2$Te interface exhibited different forms with various annealing temperature. A good p+ ohmic contact was achieved when the annealing temperature was between $180^{\circ}C$ to $200^{\circ}C$. Best cell efficiency of 12.34% was obtained when post annealing temperature was $200^{\circ}C$ for 5 min. Thermal stress test of the CdS/CdTe cells with carbon back contact showed that the $Cu_2$Te contact was stable at $50^{\circ}C$ in $N_2$ and was slowly degraded at $100^{\circ}C$ in $N_2$. In comparison to the conventional carbon contact, the $Cu_2$Te contact showed a better thermal stability.

Effect of Rapid Thermal Process on Properties of CdS Thin Films for II-VI Compound Solar Cell (급속열처리 조건에 따른 II-VI 화합물 태양전지용 CdS 박막의 특성변화)

  • Choi, Si-Hyuk;Park, Seung-Beum;Kim, Jeong-Yeon;Song, Woo-Chang;Lim, Dong-Gun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.110-111
    • /
    • 2009
  • 상온에서 밴드갭이 2.42 eV의 에너지를 가지며 직접 에너지 밴드갭을 갖는 고감도의 광전도체로 태양전지의 광투과 물질로 각광을 받고 있으며 광전도 cell로 연구되고 있는 CdS(Cadmium sulfide)를 용액 성장법(CBD)으로 제조하여 박막의 결정립의 향상과 박막내의 결함 등을 제거하기 위해 RTP(Rapid Thermal Process)를 이용하여 열처리 분위기 $N_2$, 처리시간 10분을 기준으로 열처리온도 ($300\;^{\circ}C$, $400\;^{\circ}C$, $500\;^{\circ}C$)를 변화시키며 박막의 전기적, 광학적 특성을 조사하였다. 캐리어 밀도가 급격히 낮아지고 이동도가 증가한 $500\;^{\circ}C$에서 $1.29\times10^3\;{\Omega} m$ 비저항을 나타냈다. 가시광선 영역에서 76.28%의 투과율을 보이는 특성을 나타내었다.

  • PDF

Carrier ConDuction of Thin Film Transistors (박막 트랜지스터의 반송자 전도)

  • 마대영;김기원
    • Journal of the Korean Institute of Telematics and Electronics
    • /
    • v.21 no.6
    • /
    • pp.51-55
    • /
    • 1984
  • Band headings, at grain boundary and surface of polycrystalline thin semiconductor films, were assumed. thin film ransistor conduction theory which considered trapping at surface of semiconductor was proposed. CdSe Thin Film Transistors were fabricated. CdSe was thermal evaporated and SiO2 used as insulator was rf sputtered. Output characteristics which was calculated by conduction theory were compared with experimental results.

  • PDF

ZnTe:O/CdS/ZnO intermediate band solar cells grown on ITO/glass substrate by pulsed laser deposition

  • Lee, Kyoung Su;Oh, Gyujin;Kim, Eun Kyu
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2015.08a
    • /
    • pp.197.2-197.2
    • /
    • 2015
  • Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, the ZnTe:O/CdS/ZnO structure was fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 4.5 J/cm2. The base pressure of the chamber was kept at a pressure of approximately $4{\times}10-7Torr$. ZnO thin film with thickness of 100 nm was grown on to ITO/glass, and then CdS and ZnTe:O thin film were grown on ZnO thin film. Thickness of CdS and ZnTe:O were 50 nm and 500 nm, respectively. During deposition of ZnTe:O films, O2 gas was introduced from 1 to 20 mTorr. For fabricating ZnTe:O/CdS/ZnO solar cells, Au metal was deposited on the ITO film and ZnTe:O by thermal evaporation method. From the fabricated ZnTe:O/CdS/ZnO solar cell, current-voltage characteristics was measured by using HP 4156-a semiconductor parameter analyzer. Finally, solar cell performance was measured using an Air Mass 1.5 Global (AM 1.5 G) solar simulator with an irradiation intensity of 100 mW cm-2.

  • PDF

Synthesis of Magneli Phases and Application to the Photoelectrochemical Electrode (마그넬리상 합성과 광전기화학셀 전극 응용)

  • Park, Jihwan;Nguyen, Duc Quang;Yang, Haneul;Hong, Soonhyun;Truong, Thi Hien;Kim, Chunjoong;Kim, Dojin
    • Korean Journal of Materials Research
    • /
    • v.28 no.5
    • /
    • pp.261-267
    • /
    • 2018
  • Hydrothermal synthesis of highly crystalline $TiO_2$ nanorods is a well-developed technique and the nanorods have been widely used as the template for growth of various core-shell nanorod structures. Magneli/CdS core-shell nanorod structures are fabricated for the photoelectrochemical cell (PEC) electrode to achieve enhanced carrier transport along the metallic magneli phase nanorod template. However, the long and thin $TiO_2$ nanorods may form a high resistance path to the electrons transferred from the CdS layer. $TiO_2$ nanorods synthesized are reduced to magneli phases, $TixO_{2x-1}$, by heat treatment in a hydrogen environment. Two types of magneli phase nanorods of $Ti_4O_7$ and $Ti_3O_5$ are synthesized. Structural morphology and X-ray diffraction analyses are carried out. CdS nano-films are deposited on the magneli nanorods for the main light absorption layer to form a photoanode, and the PEC performance is measured under simulated sunlight irradiation and compared with the conventional $TiO_2/CdS$ core-shell nanorod electrode. A higher photocurrent is observed from the stand-alone $Ti_3O_5/CdS$ core-shell nanorod structure in which the nanorods are grown on both sides of the seed layer.

Photoconductive Cell Characteristics of CdS Thin Films Grown by Hot-Wall Evaporation Technique (Hot-Wall Evaporation Technique으로 성장된 CdS 박막의 광전도 셀 특성)

  • Shin, Yeong-Jin;Jeong, Tae-Soo;Shin, Hyun-Keel;Kim, Taek-Sung;Jeong, Cheol-Hoon;lee, Hoon;Shin, Yeong-Shin;Rheu, Kee-Soo
    • Journal of the Korean Vacuum Society
    • /
    • v.2 no.1
    • /
    • pp.73-77
    • /
    • 1993
  • Hot-wall evaporation technique으로 세라믹 기판 위에 CdS 박막을 성장하였다. 이 때 증발원과 기판의 온도는 각각 570, 40$0^{\circ}C$이고 두께는 3$mu extrm{m}$이었다. 공기 중에서 열처리하여 감도(${\gamma}$), 광전류와 암전류의 비(pc/dc), 최대허용소비전력(MAPD), spectral response 및 응답시간 등을 측정하였다. $550^{\circ}C$, 30분간 열처리한 경우 가장 좋은 광전도 특성을 얻었으며 ${\gamma}$=0.89, pc/cd~104, MAPD: 492mW, rise time이 100ms, decay time이 260ms이었다.

  • PDF

Properties of the ZnS Thin Film Buffer Layer by Chemical Bath Deposition Process with Different Solution Concentrations and Deposition Time (화학습식공정법을 이용한 용액 농도 및 시간에 따른 ZnS 완충층 특성에 대한 분석)

  • Son, Kyeongtae;Kim, Jongwan;Kim, Minyoung;Shin, Junchul;Jo, Sunghee;Lim, Donggun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.27 no.5
    • /
    • pp.269-275
    • /
    • 2014
  • In this study, chemical bath deposition method was used to grow Zinc sulfide(ZnS) thin films from $NH_3/SC(NH_2)_2/ZnSO_4$ solutions at $90^{\circ}C$. ZnS thin films have been prepared onto ITO glass. The concentrations of $ZnSO_4$ and $NH_3$ were varied while the concentration of Thiourea was fixed in 0.52 M. Structural, optical, electrical characteristic of ZnS thin films were measured. The physical and optical properties of different ZnS thin films were influenced severely by the concentration of the two reacting chemicals. The optimal concentration of $ZnSO_4$ and $NH_3$ was 0.085 M and 1.6 M, respectively.

Cathodoluminescent properties of rare-earthe-doped $SrGa_2S_4$ thin film phosphors excited with low energy electrons

  • Nakanishi, Yoichiro
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2002.08a
    • /
    • pp.1015-1019
    • /
    • 2002
  • The deposition of $SrGa_2S_4$ thin film phosphors doped with Ce or Eu aiming at application for FEDs has been carried out by a multi-source deposition technique. A $SrGa_2S_4$ phase was formed by annealing process and $SrGa_2S_4$ thin films which were deposited using a $Ga_2S_3/Sr$ flux ratio larger than 50 and annealed in $H_2$S showed luminance and luminous efficiency of about 1700 cd/$m^2$ and 2.95 lm/W, respectively, with (0.13, 0.10) chromaticity in the activation with Ce, and about 4000 cd/$m^2$ and 7.05 lm/W, respectively, with (0.36, 0.60) under excitation with 3 kV and 60A/$cm^2$. The results obtained this experiment demonstrate the potential of $SrGa_2S_4$ thin film phosphors for FED screens.

  • PDF

Effects of Sodium and Gallium on Characteristics of CIGS Thin Films and CdS/CIGS Solar Cells by Co-evaporation Method (Na확산과 Ga첨가에 따른 동시진공증발법으로 제조된 CIGS 박막과 CdS/CIGS 태양전지의 특성)

  • Kwon, S.H.;Lee, J.C.;Kang, K.H.;Kim, S.K.;Yoon, K.H.;Song, J.S.;Lee, D.Y.;Ahn, B.T.
    • Solar Energy
    • /
    • v.20 no.2
    • /
    • pp.43-54
    • /
    • 2000
  • We prepared and characterized $Cu(In_{1-x}Ga_x)Se_2$(CIGS) films using a elemental co-evaporation method for absorbing layer of high efficiency thin film solar cells. The CIGS films deposited on a soda-lime glass exhibited low resistivity because of higher carrier concentration. Na was accumulated at the CIGS surface and the 0 and Se were also accumulated at the surface, suggesting that oxidation is a driving force of Na accumulation. The structure of CIGS film was modified or a secondary phase was formed in the Cu-poor CIGS bulk films probably due to the incorporation of Na into Cu vacancy sites. As the Ga/(In+Ga) ratio increased, the diffraction peaks of $Cu(In_{1-x}Ga_x)Se_2$ films were shifted to larger angle and splitted, and the grain size of $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films became smaller. All $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films showed the p-type conductivity regardless of the Ga/(In+Ga) ratio. Ag/n-ZnO/i-ZnO/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo solar cells were fabricated. The currently best efficiency in this study was 14.48% for $0.18cm^2$ area ($V_{oc}=581.5mV,\;J_{sc}=34.88mA$, F.F=0.714).

  • PDF

The Production of CD-ROM for the Class and the Development of Effective Master Plan Applied by It -In the Point of Wearing Korean Traditioinal Costume for First Grade of Junior Middle School Students in Home Economics Teaching- (수업용 CD-ROM 제작 및 이를 적용시킨 효과적인 학습지도안 개발 -중학교 1학년 가정 한복 입기를 중심으로-)

  • 이은선;김병미
    • Journal of Korean Home Economics Education Association
    • /
    • v.11 no.2
    • /
    • pp.13-26
    • /
    • 1999
  • The goals of this research are for producing and optimizing the CD-ROM, effective and practical Teaching-Learning method. It consists of Wearing Korean Traditional Costume for the First Grade of Middle School Students in Home Economics Teaching. This research’s summarization is following. First, the multi-media material. CD-ROM making use of Powerpoint. Wearing Korean Traditional Costume, is produced to help the students learn the difficult contents in terms of video and audio. Second, it is introduced the model of Open Education for increasing the efficiency of class. Third, it is developed to proceed the class with the CD-ROM and small group study of place activity. Fourth, it helps students concentrate on the class with proper sound effect whenever the slide films are changed. And it helps to link the web sites related to Korean Traditional Costume. Finally, another kinds of suggestions are following. The effective verification of this software that is tested and applied at the field for a given period will be necessary. And, it is necessary to upgrade for the CD-ROM and the supplementary teaching materials in Korean Traditional Costume education.

  • PDF