• Proceedings of the KIEE Conference
• /
• 2001.11a
• /
• pp.109-111
• /
• 2001

In this study, The cathode interface layer (CIL) was investigated using aromatic diamine derivatives. Cz-TPD (4,4'-biscarbazolyl (9)-biphenyl) used in the cathode interface layers is investigated emition charcaracteristics at the green organic electroluminescent devices TPD (N.N'-dyphenyl-N-N'-bis(3-methy phenyl)-1.1'-biphenyl-4.4'-diamine) as the hole transformer layer and $Alq_3$:tris (8-hydroxyquinoline) aluminium) as the electron transport layer and emiting layer maded use of the organic electroluminescent device. The Organic Electroluminescent Device with Ag, cathode and CIL of Cz-TPD(4,4'-biscarbazolyl(9)-biphenyl) showed good EL characteristics compare to a conventional Mg:Ag device and also an improved storage stability.[1] As the change in MgAg, Cz-TPD/Ag, Ag at the chthode, the electron and optical charcaracteriseics were investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.7
• /
• pp.546-550
• /
• 2001

A new Lateral Trench Insulated Gate Bipolar Transistor(LTIGBT) with p$^{+}$ diverter was proposed to improve the characteristics of the conventional LTIGBT. The forward blocking voltage of the proposed LTIGBT with p$^{+}$ diverter was about 140V. That of the conventional LTIGBT of the same size was 105V. Because the p$^{+}$ diverter region of the proposed device was enclosed trench oxide layer, he electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p$^{+}$ diverter was occurred, lately. Therefore, the p$^{+}$ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and proposed LTIGBT were 540A/$\textrm{cm}^2$, and 1453A/$\textrm{cm}^2$, respectively. The enhanced latch-up capability of the proposed LTIGBT was obtained through holes in the current directly reaching the cathode via the p$^{+}$ divert region and p$^{+}$ cathode layer beneath n$^{+}$ cathode layer./ cathode layer.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.990-993
• /
• 2006

We fabricated top emission organic light emitting diode (TEOLED) with transparent metal cathode Barium and Silver bilayer. Very thin Ba/Ag bilayer was deposited on the organic layer by thermal evaporation. This cathode shows high transmittance over 70% in visible range. And the device with a Ba-Ag has a low turn on voltage and good electrical properties.

• Journal of Industrial Technology
• /
• v.42 no.1
• /
• pp.19-27
• /
• 2022

This review will discuss the effort to understand the interfacial reactions at the anode and cathode sides of all-solid-state batteries. Antiperovskite solid electrolytes have received increasing attention due to their low melting points and anion tunability which allow controlling microstructure and crystallographic structures of this material system. Antiperovskite solid electrolytes pave the way for the understanding relationship between critical current density and mechanical properties of solid electrolytes. Microstructure engineering of cathode materials has been introduced to mitigate the volume change of cathode materials in solid-state batteries. The hollow microstructure coupled with a robust outer oxide layer effectively mitigates both volume change and stress level of cathode materials induced by lithium insertion and extraction, thus improving the structural stability of the cathode and outer oxide layer, which results in stable cycling performance of all-solid-state batteries.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.377-377
• /
• 2011

Organic solar cells (OSCs) with low cost have been studied to apply on flexible substrate by solution process in low temperature [1]. In previous researches, conventional organic solar cell was composed of metal oxide anode, buffer layer such as PEDOT:PSS, photoactive layer, and metal cathode with low work function. In this structure, indium tin oxide (ITO) and Al was generally used as metal oxide anode and metal cathode, respectively. However, they showed poor reliability, because PEDOT:PSS was sensitive to moisture and air, and the low work function metal cathode was easily oxidized to air, resulting in decreased efficiency in half per day [2]. Inverted organic solar cells (IOSCs) using high work function metal and buffer layer replacing the PEDOT:PSS have focused as a solution in conventional organic solar cell. On the contrary to conventional OSCs, ZnO and TiO2 are required to be used as a buffer layer, since the ITO in IOSC is used as cathode to collect electrons and block holes. The ZnO is expected to be excellent electron transport layer (ETL), because the ZnO has the advantages of high electron mobility, stability in air, easy fabrication at room temperature, and UV absorption. In this study, the IOSCs based on poly [N-900-hepta-decanyl-2,7-carbazole-alt-5,5-(40,70-di-2-thienyl-20,10,30-benzothiadiazole)] (PCDTBT) : [6,6]-phenyl C71 butyric acid methyl ester (PC70BM) were fabricated with the ZnO electron-transport layer and MoO3 hole-transport layer. Thickness of the ZnO for electron-transport layer was controlled by rotation speed in spin-coating. The PCDTBT and PC70BM were mixed with a ratio of 1:2 as an active layer. As a result, the highest efficiency of 2.53% was achieved.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.710-713
• /
• 2002

In order to improve the power efficiency of multi-layer organic light emitting diodes (OLEDs), electron injection into ETL(electron transport layer) from cathode at the interface between ETL and cathode was enhanced by interposing a proper electron injection layer at the interface. The HTL(hole transport layer) and ETL materials used were N, N'diphenyl- N, N' - bis(3-methylphenyl-1, 1'- biphenyl - 4, 4 'diamine (TPD) and tris (8-hydroxyquinoline) aluminum ($Alq_3$) respectively. Cathodes using co-evaporated Al-CsF, Al-KF, and Al-NaF composites are adopted to enhance the electrical and optical properties of OLEDs. OLEDs with alkaline metal-doped cathode show a luminance of as high as 35,000 cd/$m^2$, and external quantum efficiency about 1.35 %. In addition, they show higher power efficiency at all bias conditions and good reproducibility.

• Journal of the Microelectronics and Packaging Society
• /
• v.22 no.4
• /
• pp.77-82
• /
• 2015

To increase the performance of solid oxide fuel cell operating at intermediate temperature ($600^{\circ}C{\sim}800^{\circ}C$), $Sm_{0.2}Ce_{0.8}O_2$ (SDC) thin layer was applied to the $La_{0.8}Sr_{0.2}Mn_{0.8}Cu_{0.2}O_3$ (LSMCu) cathode by sol-gel coating method. The SDC was employed as a diffusion barrier layer on the yttria-stabilized zirconia(YSZ) to prevent the interlayer by-product formation of $SrZrO_3$ or $La_2Zr_2O_7$. The by-products were hardly formed at the electrolyte-cathode interlayer resulting to reduce the cathode polarization resistance. Moreover, SDC thin film was coated on the cathode pore wall surface to extend the triple phase boundary (TPB) area.

• International Journal of Precision Engineering and Manufacturing
• /
• v.7 no.2
• /
• pp.52-55
• /
• 2006

The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.277-278
• /
• 2005

Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV)-based polymer light emitting diodes (PLEDs) with the LiF cathode buffer layer. The single layer device with ITO/MEH-PPV/Al structure can be modeled as a simple parallel combination of resistor and capacitor. Insertion of a LiF layer at the Al/MEH-PPV interface shifts the highest occupied molecular orbital level and the vacuum level of the MEH-PPV layer as a result the barrier height for electron injection at the Al/MEH-PPV interface is reduced. The admittance spectroscopy measurement of the devices with the LiF cathode buffer layer shows reduction in contact resistance ($R_c$), parallel resistance ($R_p$) and increment in parallel capacitance ($C_p$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.439-440
• /
• 2007

To enhance the electron injection from the cathode of organic light-emitting diodes (OLEDs), We have studied characteristics of device that electron injection layer(EIL) is inserted between emissive layer and cathode. We fabricated bi-layer cathode $Li_2O$(x nm)/Al(100nm) and LiF(x nm)/Al(100nm) using LiF and $Li_2O$ as an electron injection layer. We analyzed the current efficiency, luminance efficiency, and external quantum efficiency of the device by varying the thickness of $Li_2O$ and LiF to be 0.5nm, 1nm, or 3nm. Using the EIL, we have obtained the efficiency of 7cd/A and the luminance of $20,000cd/m^2$. There is an improvement of efficiency by more than 3 times than the device without the $Li_2O$ layer.