• Title/Summary/Keyword: Carrier leakage

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For the financial institution computer system security, research (금융기관 전산시스템 보안 강화에 대한 연구)

  • Kim, Myung-Soo;Choi, Dae-Young;Seo, Won-Woo;Kim, Jong-Bae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.10a
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    • pp.67-70
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    • 2014
  • Last was the main issue of financial security in the future will be more emphasis on security. Such as March 20, 2013 Computational crisis, June 25 Cyber terrorism information to credit card companies and customers due to carrier spill in Financial computational security measures 'released in 2014 and the financial authorities' customer information leakage prevention measures "were published the efforts to protect customers' information assets and ensure the stability of the financial transactions carried out by financial institutions protected status check "the information annually authorities This study business operations for the protection of information technology services for IT systems security equipment, data security operating services, security management services operations, operational management of IT systems security requirements from the point to the need for information security, IT systems administrator it would be great help.

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Improvement and validation of aerosol models for natural deposition mechanism in reactor containment

  • Jishen Li ;Bin Zhang ;Pengcheng Gao ;Fan Miao ;Jianqiang Shan
    • Nuclear Engineering and Technology
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    • v.55 no.7
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    • pp.2628-2641
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    • 2023
  • Nuclear safety is the lifeline for the development and application of nuclear energy. In severe accidents of pressurized water reactor (PWR), aerosols, as the main carrier of fission products, are suspended in the containment vessel, posing a potential threat of radioactive contamination caused by leakage into the environment. The gas-phase aerosols suspended in the containment will settle onto the wall or sump water through the natural deposition mechanism, thereby reducing atmospheric radioactivity. Aiming at the low accuracy of the aerosol model in the ISAA code, this paper improves the natural deposition model of aerosol in the containment. The aerosol dynamic shape factor was introduced to correct the natural deposition rate of non-spherical aerosols. Moreover, the gravity, Brownian diffusion, thermophoresis and diffusiophoresis deposition models were improved. In addition, ABCOVE, AHMED and LACE experiments were selected to validate and evaluate the improved ISAA code. According to the calculation results, the improved model can more accurately simulate the peak aerosol mass and respond to the influence of the containment pressure and temperature on the natural deposition rate of aerosols. At the same time, it can significantly improve the calculation accuracy of the residual mass of aerosols in the containment. The performance of improved ISAA can meet the requirements for analyzing the natural deposition behavior of aerosol in containment of advanced PWRs in severe accident. In the future, further optimization will be made to address the problems found in the current aerosol model.

A Schottky Type Ultraviolet Photo-detector using RUO$_2$/GaN Contact (RUO$_2$/GaN 쇼트키 다이오드 형 자외선 수광소자)

  • Sin, Sang-Hun;Jeong, Byeong-Gwon;Bae, Seong-Beom;Lee, Yong-Hyeon;Lee, Jeong-Hui;Ham, Seong-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.10
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    • pp.671-677
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    • 2001
  • A RuO$_2$ Schottky photo-detector was designed and fabricated with GaN layers on the sapphire substrate. For good absorption of UV light, an epitaxial structure with undoped GaN(0.5 ${\mu}{\textrm}{m}$)/n ̄-GaN(0.1${\mu}{\textrm}{m}$)/n+-GaN(1.5${\mu}{\textrm}{m}$) was grown by MOCVD. The structure had the carrier concentrations of 3.8$\times$10$^{18}$ cm ̄$^3$, the mobility of 283$\textrm{cm}^2$/V.s. After ECR etching process for mesa structure with the diameter of about 500${\mu}{\textrm}{m}$, Al ohmic contact was formed on GaN layer. After proper passivation between the contacts with Si$_3$/N$_4$, was formed on undoped GaN layer. The fabricated Schottky diode had a specific contact resistance of 1.15$\times$10$^{-5}$$\Omega$.$\textrm{cm}^2$]. It has a low leakage current of 305 pA at -5 V, which was attributed by stable characteristics of RuO$_2$ Schottky contact. In optical measurement, it showed the high UV to visible extinction ratio of 10$^{5}$ and very high responsivity of 0.23 A/W at the wavelength of 365nm.

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A numerical study on the fatigue evaluation of mark-III LNG primary barrier (수치해석을 이용한 Mark-III LNG 1차 방벽에 대한 피로 평가)

  • Kwon, Sun-Beom;Kim, Myung-Sung;Lee, Jae-Myung
    • Journal of Advanced Marine Engineering and Technology
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    • v.41 no.4
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    • pp.337-344
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    • 2017
  • The demand of liquified natural gas is increasing due to environmental issues. This reason has resulted in increasing the capacity of liquified natural gas cargo tank. The Mark-III type primary barrier directly contacts liquified natural gas. Also, the primary barrier is under various loading conditions such as weight of liquified natural gas and sloshing loads. During a ship operation, various loads can cause fatigue failure. Therefore, the fatigue life prediction should be evaluated to prevent leakage of liquified natural gas. In the present study, the fatigue analysis of insulation system including primary barrier is performed using a finite element model. The fatigue life of primary barrier is carried out using a numerical study. The value of principle stress and the location of maximum principle stress range are calculated, and the fatigue life is evaluated. In addition, the effects on the insulation panel status and the arrangement of knot or corrugation are analyzed by comparing the fatigue life of various models. The insulation system which has best structural performance of primary barrier was selected to ensure structural integrity in fatigue assessment. These results can be used as a design guideline and a fundamental study for the fatigue assessment of primary barrier.

Properties of Pt/${Al_0.33}{Ga_0.67}N$ Schottky Type UV Photo-detector (Pt 전극을 이용한 ${Al_0.33}{Ga_0.67}N$ 쇼트키형 자외선 수광소자의 동작특성)

  • 신상훈;정영로;이재훈;이용현;이명복;이정희;이인환;한윤봉;함성호
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.7
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    • pp.486-493
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    • 2003
  • Schottky type A $l_{0.33}$G $a_{0.67}$N ultraviolet photodetectors were fabricated on the MOCVD grown AlGaN/ $n^{+}$-GaN and AlGaN/AlGaN interlayer/ $n^{+}$-GaN structures. The grown layers have the carrier concentrations of -$10^{18}$, and the mobilities were 236 and 269 $\textrm{cm}^2$/V.s, respectively. After mesa etching by ICP etching system, the Si3N4 layer was deposited for passivation between the contacts and Ti/AL/Ni/Au and Pt were deposited for ohmic and Schottky contact, respectively. The fabricated Pt/A $l_{0.33}$G $a_{0.67}$N Schottky diode revealed a leakage current of 1 nA for samples with interlayer and 0.1$\mu\textrm{A}$ for samples without interlayer at a reverse bias of -5 V. In optical measurement, the Pt/A $l_{0.33}$G $a_{0.67}$N diode with interlayer showed a cut-off wavelength of 300 nm, a prominent responsivity of 0.15 A/W at 280 nm and a UV-visible extinction ratio of 1.5x$10^4./TEX>.

Hydrodynamic Properties of Interconnected Fluidized Bed Chemical-Looping Combustors (상호 연결된 유동층 매체 순환식 연소로의 수력학적 특성)

  • Son, Sung Real;Go, Kang Seok;Kim, Sang Done
    • Korean Chemical Engineering Research
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    • v.48 no.2
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    • pp.185-192
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    • 2010
  • The chemical-looping combustion(CLC) has advantages of no energy loss for separation of $CO_2$ without $NO_x$ formation. This CLC system consists of oxidation and reduction reactors where metal oxides particles are circulating through these two reactors. In the present study, the reaction kinetic equations of iron oxide oxygen carriers supported on bentonite have been determined by the shrinking core model. Based on the reactivity data, design values of solid circulation rate and solids inventory were determined for the rector. Two types of interconnected fluidized bed systems were designed for CLC application, one system consists of a riser and a bubbling fluidized bed, and the other one has a riser and two bubbling fluidized beds. Solid circulation rates were varied to about $30kg/m^2s$ by aeration into a loop-seal. Solid circulation rate increases with increasing aeration velocity and it increases further with an auxiliary gas flow into the loop-seal. As solid circulation rate is increased, solid hold up in the riser increases. A typical gas leakage from the riser to the fluidized bed is found to be less than 1%.

Applicability Assessment of Epoxy Resin Reinforced Glass Fiber Composites Through Mechanical Properties in Cryogenic Environment for LNG CCS (에폭시 수지가 적용된 유리섬유 복합재료의 극저온 환경 기계적 특성 분석을 통한 LNG CCS 적용성 평가)

  • Yeom, Dong-Ju;Bang, Seoung-Gil;Jeong, Yeon-Jae;Kim, Hee-Tae;Park, Seong-Bo;Kim, Yong-Tai;Oh, Hoon-Gyu;Lee, Jae-Myung
    • Journal of the Society of Naval Architects of Korea
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    • v.58 no.4
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    • pp.262-270
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    • 2021
  • Consumption of Liquefied Natural Gas (LNG) has increased due to environmental pollution; therefore, the need for LNG carriers can efficiently transport large quantities of LNG, is increased. In various types of LNG Cargo Containment System (CCS), Membrane-type MARK-III composed of composite materials is generally employed in the construction of an LNG carrier. Among composite materials in a Mark-III system, glass-fiber composites act as a secondary barrier to prevent the inner hull structure from leakage of LNG when the primary barrier is damaged. Nevertheless, several cases of damage to the secondary barriers have been reported and if damage occurs, LNG can flow into the inner hull structure, causing a brittle fracture. To prevent those problems, this study conducted the applicability assessment of composite material manufactured by bonding glass-fiber and aluminum with epoxy resin and increasing layer from three-ply (triplex) to five-ply (pentaplex). Tensile tests were performed in five temperature points (25, -20, -70, -120, and -170℃) considering temperature gradient in CCS. Scanning Electron Microscopy (SEM) and Coefficient of Thermal Expansion (CTE) analyses were carried out to evaluate the microstructure and thermos-mechanical properties of the pentaplex. The results showed epoxy resin and increasing layer number contributed to improving the mechanical properties over the whole temperature range.

p-Type Activation of AlGaN-based UV-C Light-Emitting Diodes by Hydrogen Removal using Electrochemical Potentiostatic Activation (전기화학적 정전위 활성화를 사용한 수소 제거에 의한 AlGaN기반의 UV-C 발광 다이오드의 p-형 활성화)

  • Lee, Koh Eun;Choi, Rak Jun;Kumar, Chandra Mohan Manoj;Kang, Hyunwoong;Cho, Jaehee;Lee, June Key
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.4
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    • pp.85-89
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    • 2021
  • AlGaN-based UV-C light-emitting diodes (LEDs) were applied for p-type activation by electrochemical potentiostatic activation (EPA). The p-type activation efficiency was increased by removing hydrogen atoms through EPA treatment using a neutral Mg-H complex that causes high resistance and low conductivity. A neutral Mg-H complex is decomposed into Mg- and H+ depending on the key parameters of solution, voltage, and time. The improved hole carrier concentration was confirmed by secondary ion mass spectroscopy (SIMS) analysis. This mechanism eventually improved the internal quantum efficiency (IQE), the light extraction efficiency, the leakage current value in the reverse current region, and junction temperature, resulting in better UV-C LED lifetime. For systematic analysis, SIMS, Etamax IQE system, integrating sphere, and current-voltage measurement system were used, and the results were compared with the existing N2-annealing method.

Analysis Trap and Device Characteristic of Silicon-Al2O3-Nitride-Oxide-Silicon Memory Cell Transistors using Charge Pumping Method (Charge Pumping Method를 이용한 Silicon-Al2O3-Nitride-Oxide-Silicon Flash Memory Cell Transistor의 트랩과 소자)

  • Park, Sung-Soo;Choi, Won-Ho;Han, In-Shik;Na, Min-Gi;Lee, Ga-Won
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.7
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    • pp.37-43
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    • 2008
  • In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program/erase (P/E) speed, reliability of memory device on interface trap between Si substrate and tunneling oxide and bulk trap in nitride layer were investigated using charge pumping method which has advantage of simple and versatile technique. We analyzed different SANOS memory devices that were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SANOS cell transistors with larger capture cross section and interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. The data retention was deteriorated as increasing P/E cycling number but not coincides with interface trap increasing tendency. This result once again confirmed that interface trap independence on data retention. And the result on different program method shows that HCI program method more degraded by locally trapping. So, we know as a result of experiment that analysis the SANOS Flash memory characteristic using charge pumping method reflect the device performance related to interface and bulk trap.