• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.6
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• pp.617-626
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• 2010

In this paper, we have proposed and experimentally performed a polarization and phase control method of an optical signal which has same wavelength with the optical carrier to improve phase characteristics of a continuous wave(CW) generated by the double sideband-suppressed carrier(DSB-SC) as one of the famous photomixing technique for making sub-millimeter and terahertz waves. A polarization and phase controlled optical signal has been coupled with the general DSB-SC on an optical coupler. The output of the optical coupler is then photomixed by a photomixer. From our analysis and measurement results, we have found that the amplitude of the generated sub-mm and terahertz CW signal is higher 1.5 dB and the phase noise is lower about 3 dB@10 kHz offset frequency than the general DSBSC. Consequently, since our proposed method has improved the amplitude and phase noise of CW signals in the sub-mm and terahertz bands, it can be helpful results to make low cost CW generator in sub-millimeter and subterahertz bands.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.2
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• pp.62-66
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• 2010

In this article, a oscillator at X-band with a double H-shape metamaterial resonator (DHMR) based on high-Q is proposed with metamaterial structure to improve Ihe phase noise and output power. The proposed oscillator is required low phase noise and high output power for the high performance frequency synthesizer. DHMR is designed to be high-Q at resonance frequency through strong coupling of E-field. This character makes phase noise excellent. The oscillator using DHMR is oscillated in X-band so as to apply frequency synthesizer of radar systems. The output power is 4.33 dBm and the phase noise is -108 dBc/Hz at 100 kHz offset of carrier frequency.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.5A
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• pp.513-518
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• 2010

Improvement of phase noise characteristics in a different approach of HEMT VCO (Voltage Controlled Oscillator) with coupled microstrip lines to tune the oscillating frequency is investigated. Two HEMT VCOs of 9.8GHz are manufactured in the same configuration except for the frequency tuning circuit in order to empirically demonstrate the phase noise reduction. Experimental result shows that phase noise reduction can be enhanced 8dBc/Hz at 100KHz offset frequency from carrier by frequency tuning circuit with coupled microstrip lines over the conventional VCO.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.83-87
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• 2004

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

• ETRI Journal
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• v.37 no.3
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• pp.460-470
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• 2015

Orthogonal frequency-division multiplexing (OFDM) is one of the most widely used technologies in current wireless communication systems and standards. Cognitive radio (CR) provides a robust solution to the problem of spectrum congestion as it offers opportunistic usage of frequency bands that are not occupied by primary users. Due to the underlying sensing, spectrum shaping, scaling, and interoperable capabilities of OFDM, it has been adapted as a best transmission technology for CR wireless systems. However, the performance of an OFDM-based CR wireless system is affected by the existence of narrowband interference (NBI) from other users. Further, due to carrier frequency offset in NBI sources, NBI energy may spread over all subcarriers of an OFDM signal. In this paper, a fixed Amplify-and-Forward (AF) relay that operates at a frequency band that is different from that of direct mode is introduced to suppress the effect of NBI. Analytical expressions are derived for outage probability in direct, AF-relay, and incremental relaying modes. The outage performance of the proposed AF relay-based CR network is proven to be better than that of direct mode.

• Journal of information and communication convergence engineering
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• v.13 no.2
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• pp.139-143
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• 2015

A push-push voltage controlled dielectric resonator oscillator (VCDRO) with a modified frequency tuning structure using broadside couplers is investigated. The push-push VCDRO designed at 16 GHz is manufactured using a low temperature co-fired ceramic (LTCC) technology to reduce the circuit size. The frequency tuning structure using a broadside coupler is embedded in a layer of the A6 substrate by using the LTCC process. Experimental results show that the fundamental and third harmonics are suppressed above 15 dBc and 30 dBc, respectively, and the phase noise of push-push VCDRO is -97.5 dBc/Hz at an offset frequency of 100 kHz from the carrier. The proposed frequency tuning structure has a tuning range of 4.46 MHz over a control voltage of 1-11 V. This push-push VCDRO has a miniature size of 15 mm×15 mm. The proposed design and fabrication techniques for a push-push oscillator seem to be applicable in many space and commercial VCDRO products.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.441-446
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• 2008

In this papers, a PLDRO(Phase Locked Dielectric Resonator Oscillator) is designed and implemented at the oscillator in which fundamental frequency is 18.3 GHz. The proposed PLDRO so as to improve the PLDRO of the general structure is designed to the goal of the minimize of the size and the performance improvement. Three VCO(Voltage controlled Oscillator) and the power combiner improved the output power. A VCDRO(Voltage Controlled Dielectric Resonator Oscillator) is manufactured using a varactor diode to tune oscillating frequency electrically, and its phase is locked to reference frequency by SPD(Sampling Phase Detector). This product is fabricated on Teflon substrate with dielectric constant 2.2 and device is ATF -13786 of Ka-band using. This PLDRO generates an output power of 5.67 dBm at 18.3 GHz and has the characteristics of a phase noise of -80.10 dBc/Hz at 1 kHz offset frequency from carrier, the second harmonic suppression of -33 dBc. The proposed PLDRO can be used in Ka-band satellite applications

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.38 no.4
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• pp.11-17
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• 2001

In this paper, we propose a polarity decision carrier recovery algorithm for high order QAM(Quadrature Amplitude Modulation), which has robust and large frequency acquisition performance in the high order QAM modem. The proposed polarity decision PD(Phase Detector) output and its variance characteristic are mathematically derived and the simulation results are compared with conventional DD(Decision-Directed) method. While the conventional DD algorithm has linear range of $3.5^{\circ}{\sim}3.5^{\circ}$, the proposed polarity decision PD algorithm has linear range as large as $-36^{\circ}{\sim}36^{\circ}$ at ${\gamma}-17.9$. The conventional DD algorithm can only acquire offsets less than ${\pm}10\;KHz$ in the case of the 256 QAM while an analog front-end circuit generally can reduce the carrier-frequency offset down to only ${\pm}100\;KHz$. Thus, in this case additional AFC or phase detection circuit for carrier recovery is required. But by adopting the proposed polarity decision algorithm, we can find the system can acquire up to ${\pm}300\;KHz$at SNR = 30dB without aided circuit.

• International Journal of Precision Engineering and Manufacturing
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• v.8 no.4
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• pp.22-26
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• 2007

We describe a new way of implementing absolute displacement measurements by exploiting the optical comb of a femtosecond pulse laser as a wavelength ruler, The optical comb is stabilized by locking both the repetition rate and the carrier offset frequency to an Rb clock of frequency standard. Multiwavelength interferometry is then performed using the quasi-monochromatic beams of well-defined generated wavelengths by tuning an external cavity laser diode consecutively to preselected light modes of the optical comb. This scheme of wavelength synthesizing allows the measurement of absolute distances with a high precision that is traceable to the definition of time. The achievable wavelength uncertainty is $1.9{\times}10^{-10}$, which allows the absolute heights of gauge blocks to be determined with an overall calibration uncertainty of 15 nm (k = 1). These results demonstrate a successful industrial application of an optical frequency synthesis employing a femtosecond laser, a technique that offers many possibilities for performing precision length metrology that is traceable to the well-defined international definition of time.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.675-681
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• 2016

A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.