JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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An On-Chip Differential Inductor and Its Use to RF VCO for 2 GHz Applications

  • Cho, Je-Kwang (RF PT, System-LSI Division, Device Solution Network, Samsung Electronics) ;
  • Nah, Kyung-Suc (RF PT, System-LSI Division, Device Solution Network, Samsung Electronics) ;
  • Park, Byeong-Ha (RF PT, System-LSI Division, Device Solution Network, Samsung Electronics)
  • Published : 2004.06.30
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Abstract

Phase noise performance and current consumption of Radio Frequency (RF) Voltage-Controlled Oscillator (VCO) are largely dependent on the Quality (Q) factor of inductor-capacitor (LC) tank. Because the Q-factor of LC tank is determined by on-chip spiral inductor, we designed, analyzed, and modeled on-chip differential inductor to enhance differential Q-factor, reduce current consumption and save silicon area. The simulated inductance is 3.3 nH and Q-factor is 15 at 2 GHz. Self-resonance frequency is as high as 13 GHz. To verify its use to RF applications, we designed 2 GHz differential LC VCO. The measurement result of phase noise is -112 dBc/Hz at an offset frequency of 100 kHz from a 2GHz carrier frequency. Tuning range is about 500 MHz (25%), and current consumption varies from 5mA to 8.4 mA using bias control technique. Implemented in $0.35-{\mu}m$ SiGe BiCMOS technology, the VCO occupies $400\;um{\times}800\;um$ of silicon area.

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