• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.420-420
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• 2013

We investigated oxygen plasma effect on defect states near the interface of AlGaN/GaN High Electron Mobility Transistor (HEMT) structure grown on a silicon substrate. After the plasma treatment, electrical properties were evaluated using a frequency dependant Capacitance-Voltage (C-V) and a temperature dependant C-V measurements, and a deep level transient spectroscopy (DLTS) method to study the change of defect densities. In the depth profile resulted from the temperature dependant C-V, a sudden decrease in the carrier concentration for two-dimensional electron gas (2DEG) nearby 250 K was observed. In C-V measurement, the interface states were improved in case of the oxygen-plasma treated samples, whereas the interface was degraded in case of the nitrogen-plasma treated sample. In the DLTS measurement, it was observed the two kinds of defects well known in AlGaN/GaN structure grown on sapphire substrate, which have the activation energies of 0.15 eV, 0.25 eV below the conduction band. We speculate that this defect state in AlGaN/GaN on the silicon substrate is caused from the decrease in 2DEG's carrier concentrations. We compared the various DLTS signals with filling pulse times to identify the characteristics of the newly found defect. In the filling pulse time range under the 80 us, the activation energies changed as the potential barrier model. On the other hand, in the filling pulse time range above the 80 us, the activation energies changed as the extended potential model. Therefore, we suggest that the found defect in the AlGaN/GaN/Si structure could be the extended defect related with AlGa/N/GaN interface states.

• Current Photovoltaic Research
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• 제8권3호
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• pp.102-106
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• 2020

In this paper, the effect of MoSe₂ on the contact resistance (R_C) of the transparent conducting oxide (TCO) and Mo junction in the scribed P2 region of the Cu(In,Ga)Se₂ (CIGS) solar module was analyzed. The CIGS/Mo junction becomes ohmic-contact by MoSe₂, so the formation of the MoSe₂ layer is essential. However, the CIGS solar module has a TCO/MoSe₂/Mo junction in the P2 region due to structural differences from the cell. The contact resistance (R_C) of the P2 region was calculated using the transmission line method, and MoSe₂ was confirmed to increase R_C of the TCO/Mo junction. B doped ZnO (BZO) was used as TCO, and when BZO/MoSe₂ junction was formed, conduction band offset (CBO) of 0.6 eV was generated due to the difference in their electron affinities. It is expected that this CBO acts as a carrier transport barrier that disturbs the flow of current, resulting in increased R_C. In order to reduce the R_C caused by CBO, MoSe₂ must be made thin in a CIGS solar module.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.180-180
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• 2016

최근 디스플레이 시장의 주요 키워드는 flexible organic light emitting diode (OLED) 이다. OLED 소자의 수명을 결정하는 가장 큰 요인 중의 하나는 공기 중의 O2와 H2O에 의한 유기물의 열화이다. 따라서 공기 중의 O2나 H2O가 유기물에 쉽게 침투하는 것을 막는 것은 소자의 수명 향상을 위하여 필수적이라 할 수 있다[1-3]. SiNx 박막은 경질로 투과성이 우수하며, 화학적 불활성인 특성으로 이러한 Barrier 역할로 연구되어 산업분야에 다양하게 응용되고 있다[4]. SiNx 박막은 일반적으로 plasma enhanced chemical vapor deposition (PECVD) 기술을 이용하여 증착되는데 기존의 PECVD 기술을 이용한 SiNx 박막은 낮은 water vapor transmission rate (WVTR) 등의 문제점들로 인해 한계점이 들어났다. 본 연구에서는, flexible display의 thin film encapsulation (TFE) 공정에서의 적용을 알아보기 위해 $370{\times}470$ size를 증착할 수 있는 In-line 장비를 이용하였으며, 기존의 PECVD 기술의 문제점으로 지적되고 있는 낮은 WVTR을 해결하기 위하여 저온 (<$100^{\circ}C$) 선형 PECVD 기술을 이용하여 WVTR을 개선하고자 하였다. 공정가스로는 SiH4와 NH3를 사용하였으며, SiH4 Carrier 가스로 He을 추가적으로 사용하였다. 또한 공정 압력은 100mTorr를 유지하였다. 증착된 SiNx 박막의 물리적, 화학적 특성 분석을 위해 분광엘립소메타, field emission electron microscopy (FESEM), X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) 등을 이용하여 측정하였으며, 박막에 투습되는 수분의 양은 MOCON사의 AQUATRAN 2(W)로 측정하였다. OLED 소자를 구현하기 위해서는 기본적으로 봉지층에 투습되는 양을 $10-6g/m2{\cdot}day$ 이하로 막아줘야 한다고 알려져 있으나, 기존의 PECVD 기술을 이용하여 제작된 SiNx 박막의 WVTR은 $10-2{\sim}10-3g/m2{\cdot}day$ 레벨의 WVTR 결과를 보이고 있다. 본 연구에서 사용된 저온 선형 PECVD 기술을 이용하여 제작된 SiNx 박막의 WVTR은 $5.0{\times}10-5g/m2{\cdot}day$ 이하의 개선된 결과를 확인 할 수 있었다. 또한 flexible display에 적용하기 위해 SiNx 박막의 두께를 최소화한 100nm의 두께에서도 WVTR은 $5.0{\times}10-5g/m2{\cdot}day$ 이하의 결과가 유지됨을 알 수 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.17.2-17.2
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• 2011

Double-walled carbon nanotubes (DWCNTs) were grown with vertical alignment on a Si wafer by using catalytic thermal chemical vapor deposition. This study investigated the effect of pre-annealing time of catalyst on the types of CNTs grown on the substrate. The catalyst layer is usually evolved into discretely distributed nanoparticles during the annealing and initial growth of CNTs. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. Both the catalyst and support layers were coated by using thermal evaporation. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of H2 as a carrier gas and 20 sccm of C2H2 as a feedstock at 95 torr and $750^{\circ}C$. In this study, the catalyst and support layers were subject to annealing for 0~420 sec. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and atomic force microscopy. The annealing for 90~300 sec caused the growth of DWCNTs as high as ~670 ${\mu}m$ for 10 min while below 90 sec and over 420 sec 300~830 ${\mu}m$-thick triple and multiwalled CNTs occurred, respectively. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of 112~191 cm-1, implying the presence of DWCNTs, TWCNTs, MWCNTs with the tube diameters 3.4, 4.0, 6.5 nm, respectively. The maximum ratio of DWCNTs was observed to be ~85% at the annealing time of 180 sec. The Raman spectra of the as-grown DWCNTs showed low G/D peak intensity ratios, indicating their low defect concentrations. As increasing the annealing time, the catalyst layer seemed to be granulated, and then grown to particles with larger sizes but fewer numbers by Ostwald ripening.

• 대한조선학회논문집
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• 제50권6호
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• pp.407-413
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• 2013

In the conventional towing tank, the ordinary towing carriage has a speed barrier which caused not only by the limitation of the length of towing tank but also the limitation of acceleration. Therefore the length of the towing tank should be decided carefully from the planning stage of the towing tank construction. Consequently the acceleration of the towing carriage should be taken less than 0.06g practically to avoid the slip of the wheel on rail. Due to the increasing demand of the high speed experiments on the development of special novel ship, the requirement of the high speed towing carriage is continuously increased recently. When the minimum measuring time of the towing experiment is prescribed as five seconds, the carriage should be accelerated with higher than 0.12 g to get the speed of 18 m/sec even in the towing tank having a length of 400m in length approximately. This means that the requirement of acceleration is bigger than twice of the ordinary practices of carriage acceleration. In such a condition the exerted total power of motor could not converted to traction force for the acceleration of the carriage without slip. To over come these difficulties a pair of horizontal traction wheels are reinforced to each of the ordinary vertical carrier wheel and appropriate suspension system has been devised for the towing tank of super high speed operation. It is believed that the design of novel suspension system adaptable for the high speed acceleration of towing carriage will play a important role as a reference for the remodeling of the towing tank for high speed experiment.

• Journal of Positioning, Navigation, and Timing
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• 제6권4호
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• pp.211-221
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• 2017

Ellipsodially referenced survey (ERS) is considered as one of the challenging issues in the hydrographic surveys due to the fact that the bathymetric data collected by this technique can be readily transformed either to the geodetic or the chart datum by application of some geoscientific models. Global Navigation Satellite Systems (GNSS) is a preferred technique to determine the ellipsoidal height of a vessel reference point (RP) because it provides cost-effective and unprecedentedly accurate positioning solutions. Especially, the GNSS-derived heights include heave and dynamic draft of a vessel, so as for the reduced bathymetric solutions to be potentially free from these corrections. Although over the last few decades, differential GNSS (DGNSS) has been widely adopted in the bathymetric surveys, it only provides limited accuracy of the vertical component. This technical barrier can be effectively overcome by adopting the so-called GNSS carrier phase (CPH) based techniques, enhancing accuracy of the height solution up to few centimeters. From the positioning algorithm standpoint, the CPH-based techniques are categorized under absolute and relative positioning in post-processing mode; the former is precise point positioning (PPP) correcting errors by the global or regional models, the latter is post-processed kinematic positioning (PPK) that uses the differencing technique to common error sources between two receivers. This study has focused on assessment of achievable accuracy of the ellipsoidal heights obtained from these CPH-based techniques with a view to their applications to hydrographic surveys where project area is, especially, few tens to hundreds kilometers away from the shore. Some field trials have been designed and performed so as to collect GNSS observables on static and kinematic mode. In this paper, details of these tests and processed results are presented and discussed.

• 대한전자공학회논문지TC
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• 제44권8호
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• pp.33-41
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• 2007

IEEE 802.11 DCF 채널 접근 기능은 충돌을 피하고 hidden-terminal과 exposed-terminal 문제를 회피하기 위하여 두 홈 네트워크 내에서는 단일 전송을 허락한다. 이러한 단일 전송은 전송자의 이웃 노드가 전체 왕복시간 동안 데이터 프레임을 기다리게 하며, 프레임 지연의 증가와 네트워크 처리량을 낮게 하는 결과를 초래한다. 실시간 응용들은 낮은 매체 이용, 특히 높은 네트워크 트래픽에 대해 심하게 영향을 받는다. 본 논문은 IEEE 802.11의 프레임 집합화 기술을 이용하여 기본적인 DCF 기능을 유지한 단일 전송 장애를 극복하는 새로운 방안을 제시한다. 제안한 방안은 비 간섭 동기화 슬롯에서 병렬 전송을 허용한다. 병렬 전송은 몇몇 상황에서 물리적인 전송자 감지와 랜덤 백오프 타임을 회피하며, 프레임 지연을 줄이고 매체 이용과 네트워크 용량을 증가시킨다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1343-1346
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• 2005

Self assembled monolayers (SAM) are generally used at the anode/organic interface to enhance the carrier injection in organic light emitting devices, which improves the electroluminescence performance of organic devices. This paper reports the use of SAM of 1-decanethiol (H-S(CH2)9CH3) at the cathode/organic interface to enhance the electron injection process for organic light emitting devices. Aluminum (Al), tris-(8-hydroxyquionoline) aluminum (Alq3), N,N'-diphenyl-N,N'-bis(3 -methylphenyl)-1,1'- diphenyl-4,4'-diamine (TPD) and indium-tin-oxide (ITO) were used as bottom cathode, an emitting layer (EML), a hole-transporting layer (HTL) and a top anode, respectively. The results of the capacitancevoltage (C-V), current density -voltage (J-V) and brightness-voltage (B-V), luminance and quantum efficiency measurements show a considerable improvement of the device performance. The dipole moment associated with the SAM layer decreases the electron schottky barrier between the Al and the organic interface, which enhances the electron injection into the organic layer from Al cathode and a considerable improvement of the device performance is observed. The turn-on voltage of the fabricated device with SAM layer was reduced by 6V, the brightness of the device was increased by 5 times and the external quantum efficiency is increased by 0.051%.

• 센서학회지
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• 제29권4호
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• 대한기계학회논문집A
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• 제38권5호
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• pp.559-566
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• 2014

제철공장의 소결대차 스틸바의 내열성, 내마모성, 내부식성 등의 성질을 향상시키기 위하여 용사코팅을 적용한 연구가 진행되었다. 약 $700^{\circ}C$의 고온환경에서 내열, 내마모, 부식 등에 노출되어 있는 스틸의 표면에 $Al_2O_3$, $Cr_2O_3$, WC 코팅을 적용하여 국부적으로 고온내마모성, 내식성, 내열성, 내열충격성 등을 향상시킴으로써 기존 제강공정에서 사용되는 스틸바의 수명을 향상시켰다. 스틸바에 적용한 금속용사 코팅층에 대하여 고온내마모시험, 열충격시험, 내부식시험을 수행하였다. 코팅층의 물리적, 화학적, 기계적 특성이 코팅이 안된 재료에 비해 매우 우수하였다.