• Journal of the Korean Society of Manufacturing Technology Engineers
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• 제23권2호
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• pp.186-193
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• 2014

This paper presents characteristic analysis of underwater bearing for canned type electric water pump. Characteristic analysis of underwater bearing was performed using self-developed performance tester, which capable of torque change, noise change, motor speed change and abrasion loss test with respect to temperature change of underwater bearing. The performance tester can be monitored in real time by designing the control unit using the Labview program. The performance experiment was performed through comparison of the silicon carbide (SIC) and the carbon bearing. From the experiment results, performance of SIC bearing was better than carbon bearing at the abrasion and temperature experiment.

• Korean Journal of Materials Research
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• 제27권9호
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• pp.471-476
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• 2017

In order to improve the high temperature oxidation resistance and lifespan of mat type porous carbon insulation, SiC was coated on carbon insulation by solution coating using polycarbosilane solution, curing in an oxidizing atmosphere at $200^{\circ}C$, and pyrolysis at temperatures up to $1200^{\circ}C$. The SiOC phase formed during the pyrolysis process was converted into SiC crystals as the heat treatment temperature increased, and a SiC coating with a thickness of 10-15 nm was formed at $1600^{\circ}C$. The SiC coated specimen showed a weight reduction of 8.6 % when it was kept in an atmospheric environment of $700^{\circ}C$ for 1 hour. On the other hand, the thermal conductivity was 0.17 W/mK, and no difference between states before and after coating was observed at all.

• Journal of the Korean Ceramic Society
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• 제55권4호
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• pp.392-399
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• 2018

$C_f/SiC$ composites were prepared via a process combining chemical vapor infiltration (CVI) and precursor infiltration pyrolysis (PIP), wherein silicon carbide matrices were infiltrated into 2.5D carbon preforms. The obtained composites exhibited porosities of 20 vol % and achieved strengths of 244 MPa in air at room temperature and 423 MPa at $1300^{\circ}C$ under an Ar atmosphere. Carbon fiber pull-out was rarely observed in the fractured surfaces, although intermediate layers of pyrolytic carbon of 150 nm thickness were deposited between the fiber and matrix. Fatigue fracture was observed after 1380 cycles under 45 MPa stress at $1000^{\circ}C$. The fractured samples were analyzed by transmission electron microscopy to observe the distributed phases.

• Journal of the Korean Ceramic Society
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• 제46권5호
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• pp.467-471
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• 2009

Effects of boron and carbon on the densification and thermal decomposition of an AlN-SiC-$TiB_2$ system were investigated. $SiO_2$ was mostly removed by the addition of carbon, while $Al_2O_3$ formed $Al_4O_4C$ and promoted the densification of the systems above $1850^{\circ}C$. Rather porous specimens were obtained without the additives after hot pressing at $2100^{\circ}C$, while densification was mostly completed at $2000^{\circ}C$ by using the additives. The sintering temperature decreased further to $1950^{\circ}C$ by applying spark plasma sintering. The additives promoted the shrinkage of AlN by forming a liquid phase which was originated from the carbo- and boro-thermal reduction of $Al_2O_3$ and AlN.

• Journal of the Korean Ceramic Society
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• 제35권12호
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• pp.1336-1336
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• 1998

A twt -step carbothermal reduction scheme has been employed for the synthesis of SiC whiskers in an Ar or a H2 atmosphere via vapor-solid two-stage and vapor-liquid-solid growth mechanism respectively. It has been shown that the whisker growth proceed through the following reaction mechanism in an Ar at-mosphere : SiO2(S)+C(s)-SiO(v)+CO(v) SiO(v)3CO(v)=SiC(s)whisker+2CO2(v) 2C(s)+2CO2(v)=4CO(v) the third reaction appears to be the rate-controlling reaction since the overall reaction rates are dominated by the carbon which is participated in this reaction. The whisker growth proceeded through the following reaction mechaism in a H2 atmosphere : SiO2(s)+C(s)=SiO(v)+CO(v) 2C(s)+4H2(v)=2CH4(v) SiO(v)+2CH4(v)=SiC(s)whisker+CO(v)+4H2(v) The first reaction appears to be the rate-controlling reaction since the overall reaction rates are enhanced byincreasing the SiO vapor generation rate.

• Journal of the Korean Society of Safety
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• 제31권3호
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• pp.16-21
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• 2016

Carbon Fiber Reinforced Plastic(CFRP) composite with a higher specific strength and rigidity is more excellent than conventional metallic materials or other organic polymer of FRP. It has been widely used in vehicles, aerospaces and high technology industries which are associated with nuclear power fields. However, CFRP laminated composite has several disadvantages as like a delamination, matrix brittleness and anisotropic fibers that are the weak points of the crack initiation. In this present work, the reinforced silicon carbide(SiC) particles were added to the interlayer of CFRP laminates in order to mitigate the physical vulnerability affecting the cracking and breaking of the matrix in the CFRP laminated composite because of excellent specific strength and thermal shock resistance characteristics of SiC. The 1wt% of SiC particles were spread into the CFRP prepreg by using a spray coating method. After that, CFRP prepregs were laminated for the specimen. Also, the twill woven type CFRP prepreg was used because it has excellent workability. Thus the mechanical and fracture behaviors of the twill woven CFRP laminated composite reinforced with SiC particles were investigated with the acoustic emission(AE) method under a fracture test. The results show that the SiC particles enhance the mechanical and fracture characteristics of the twill CFRP laminate composite.

• Journal of Korea Foundry Society
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• 제33권2호
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• pp.69-74
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• 2013

Silicon (Si) wafer was grown by using direct growth from Si melt and contaminations of wafer during the process were investigated. In our process, BN was coated inside of all graphite parts including crucible in system to prevent carbon contamination. In addition, coated BN layer enhance the wettability, which ensures the favorable shape of grown wafer by proper flow of Si melt in casting mold. As a result, polycrystalline silicon wafer with dimension of $156{\times}156$ mm and thickness of $300{\pm}20$ um was successively obtained. There were, however, severe contaminations such as BN and SiC on surface of the as-grown wafer. While BN powders were easily removed by brushing surface, SiC could not be eliminated. As a result of BN analysis, C source for SiC was from binder contained in BN slurry. Therefore, to eliminate those C sources, additional flushing process was carried out before Si was melted. By adding 3-times flushing processes, SiC was not detected on the surface of as-grown Si wafer. Polycrystalline Si wafer directly grown from Si melt in this study can be applied for the cost-effective Si solar cells.

• Journal of the Korean Ceramic Society
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• 제46권3호
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• pp.225-228
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• 2009

The processing and characterization of ceramic nanocomposites, which produce bulk nanostructures with attractive mechanical properties, have been emphasized and introduced at Prof. Mukherjee's Lab at UC Davis. The following subjects will be introduced in detail in Part II, III, and IV. In Part II, the paper will describe a three-phase alumina-based nanoceramic composite demonstrating superplasticity at a surprisingly lower temperature and higher strain rate. The next part will show that an alumina-carbon nanotube-niobium nanocomposite produced fracture toughness values that are three times higher than that of pure nanocrystalline alumina. It was possible to take advantage of both fiber-toughening and ductile-metal toughening in this investigation. In the fourth section, discussed will be a silicon-nitride/silicon-carbide nanocomposite, produced by pyrolysis of liquid polymer precursors, demonstrating one of the lowest creep rates reported so far in ceramics at the comparable temperature of $1400^{\circ}C$. This was first achieved by avoiding the oxynitride glass phase at the intergrain boundaries. One important factor in the processing of these nanocomposites was the use of the electrical field assisted sintering method. This allowed the sintering to be completed at significantly lower temperatures and during much shorter times. These improvements in mechanical properties will be discussed in the context of the results from the microstructural investigations.

• Nuclear Engineering and Technology
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• 제53권7호
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• pp.2357-2363
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• 2021

Silicon carbide is widely used in radiation environments due to its excellent properties. However, when exposed to the strong radiation environment constantly, plenty of defects are generated, thus causing the material performance downgrades or failures. In this paper, the two-temperature model (2T-MD) is used to explore the defect recovery process by applying the electronic energy loss (Se) on the pre-damaged system. The effects of defect concentration and the applied electronic energy loss on the defect recovery process are investigated, respectively. The results demonstrate that almost no defect recovery takes place until the defect density in the damage region or the local defect density is large enough, and the probability of defect recovery increases with the defect concentration. Additionally, the results indicate that the defect recovery induced by swift heavy ions is mainly connected with the homogeneous recombination of the carbon defects, while the probability of heterogeneous recombination is mainly dependent on the silicon defects.

• Journal of Sensor Science and Technology
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• 제22권3호
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• pp.175-180
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• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.