• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.11-14
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combinations of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self·do bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.471-471
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• 2010

대면적 디스플레이나 태양전지를 만들기 위해 식각 공정에 주로 이용되는 capacitively coupled plasma 장비의 크기에 대한 관심이 높아지고 있다. 특히, RF power를 사용함에 따라 높은 주파수로 올라갈수록 전극에 발생하는 standing wave effect로 인해 챔버 안의 전자기장의 세기가 균일하지 않고 그로 인해 plasma의 밀도 역시 균일하지 않다.[1] 이러한 plasma의 non-uniformity를 전극에 들어가는 power의 feeding 방법을 바꿔 가면서 해결해 보려고 하였다. ($0.48\;m\;{\times}\;0.48\;m$)크기의 사각전극과 50 MHz의 RF power를 사용하였다. plasma의 분포는 ion probe를 통해 살펴 보았다.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.119-119
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.158-158
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• 2005

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.10 s.113
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• pp.929-934
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• 2006

In the paper, we suggest a simpler synthesis technique for capacitively-coupled match circuit(CCMC) which have a function of DC block and impedance matching simultaneously, and introduce a stability margin analysis technique for designing microwave amplifier under conditionally stable state. Stability margin analysis is used to determine optimum match point that ensure maximum gain under the given stability margin. It can reduce time consuming work for selecting match points in the conditionally stable state. Also, suggested miniaturization scheme of matching network is distinguished from previous work with respect to reducing deterministic parameters for CCMC synthesis. To verify utility of suggested method, 24 GHz gain block is fabricated under conditionally stable state using an internal thin-film fabrication process, Measured results show a stable gain of 10 dB and flatness of 1 dB, which is well coincident with simulated one.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.112-118
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• 2001

Magnetic field is commonly used in low temperature processing plasmas to enhance the performance of the plasma reactors. E$\times$B magnetron or surface multipole configuration is the most popular. However, the properties of capacitively coupled rf plasma confined by axial static magnetic field have rarely been studied. With these background, the effect of magnetic field on the characteristics of capacitively coupled 13.56 MHz/40 KHz argon plasma was studied, Ion saturation current, electron temperature and plasma potential were measured by Langmuir probe and emissive probe. At low pressure region (~10 mTorr), ion current increases by a factor of 3-4 due to reduction of diffusion loss of charged particles to the wall. Electron temperature slightly increases with magnetic field for 13.56 MHz discharge. However, for 40 KHz discharge, electron temperature decreased from 1.8 eV to 0.8 eV with magnetic field. It was observed that the magnetic field induces large temporal variation of the plasma potential. Particle in cell simulation was performed to examine the behaviors of the space potential. Experimental and simulation results agreed qualitatively.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.322-326
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• 2011

Etch process of silicon dioxide layer by using capacitively coupled plasma (CCP) is currently being used to manufacture semiconductor devices with nano-scale feature size below 50 nm. In typical CCP plasma etcher system, plasmas are generated by applying the RF power on upper electrode and ion bombardment energy is controlled by applying RF power to the bottom electrode with the Si wafer. In this case, however, etch results often drift due to heating of the electrode during etching process. Therefore, controlling the temperature of the upper electrode is required to obtain improvement of etch repeatability. In this work, we report repeatability improvement during the silicon dioxide etching under extreme process conditions with very high RF power and close gap between upper and bottom electrodes. Under this severe etch condition, it is difficult to obtain reproducible oxide etch results due to drifts in etch rate, critical dimension, profile, and selectivity caused by unexpected problems in the upper electrode. It was found that reproducible etch results of silicon dioxide layer could be obtained by controlling temperature of the upper electrode. Methods of controlling the upper electrode and the correlation with etch repeatability will be discussed in detail.

• Applied Chemistry for Engineering
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• v.22 no.6
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• pp.711-717
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• 2011

Two dimensional simulation results of a capacitively coupled oxygen plasma in a cylindrical reactor geometry are presented. Detailed electron impact reaction rates, which strongly depend on electron energy, are computed from collision cross sections of electrons with $O_2$ and O. Through the coupling of a three moment plasma model with a neutral chemistry/transport model are predicted spatiotemporal distributions of both charged species (electron, $O_2{^+}$, $O^+$, $O_2{^-}$, and $O^-$) and neutral species including ground states ($O_2$ and O) and metastables, known to play important roles in oxygen plasma, such as $O_2(a^1{\Delta}_g)$, $O_2(b^1{{\Sigma}_g}^+)$, $O(^1D)$, and $O(^1S)$. The simulation results clearly verify the existence of a double layer near sheath boundaries in the electronegative plasma.

• Geophysics and Geophysical Exploration
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• v.5 no.1
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• pp.23-32
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• 2002

Capacitively-coupled resistivity (CCR) system is known to be very useful where galvanic contact to earth is impossible, such as the area covered with thick ice, snow, concrete or asphalt. This system injects current non-galvanically, i.e., capacitively to earth through line antenna and measures potential difference in a same manner. We derived geometric factor for two types of antenna configuration and presented the method of processing and converting the data obtained with CCR system suitable to conventional resistivity inversion analysis. The CCR system, however, has limitations on use at conductive area or electrically noisy area since it is very difficult to inject sufficient current to earth with this system as with conventional resistivity system. This causes low SM ratio when acquiring data with CCR system and great care must be taken in acquiring data with this system. Additionally the uniform contact between line antennas and earth is also crucial factor to obtain good S/N ratio data. The CCR method, however, enables one to perform continuous profiling over a survey line by dragging entire system and thus will be useful in rapid investigation of conductivity distribution in shallow subsurface.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.11a
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• pp.21.2-21.2
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• 2008