• 조명전기설비학회논문지
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• 제22권1호
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• pp.33-39
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• 2008

직류방전이 추가로 인가된 용량결합고주파(CCRF)여기에 의한 아연증기레이저에서 6개의 레이저선들이 방출되었다. 이들의 파장은 491.162[nm]와 492.403[nm]의 청색선과 589.433[nm]의 오렌지선 그리고 747.979[nm], 758.848[nm], 773.25[nm]의 적외선 영역에 분포되어 있다. 최적의 레이저운전을 위해서 방전파라미터들이 결정되었다. 13.56[MHz]의 고주파전력 400[W]에서 오븐온도 $780{\sim}800[K]$, 헬륨압력 $3.5{\sim}5.5[kPa]$로 최적화되었다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2018년도 전력전자학술대회
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• pp.78-80
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• 2018

본 논문은 용량성 결합 플라즈마 응용 시스템을 위한 전류형 토폴로지 기반의 전력 변환장치 구조를 제안한다. 제안된 시스템은 독립적으로 제어된 두 개의 고 정밀 펄스 전류를 부하로 출력하는 병렬 연결된 전류형 전력 변환장치로 구성된다. 전체 회로 토폴로지는 네 가지 세부 부분; 바이어스 전류 발생기, 바이어스 전류 모듈레이터, 슬롭 전류 발생기, 슬롭 전류 모듈레이터로 구성되어 있다. 제안된 시스템은 빠른 과도 특성을 위해 1200V/90A급 SiC MOSFET 스위치를 사용하였다. 제안된 전력 변환장치는 4.5kV의 출력전압, 40A급 출력전류와 100ns급 전류 상승/하강 특성을 충족시키도록 설계되었다. 본 연구는 펄스 전류형 전력 변환회로를 제안함으로써 전압형 전력 변환장치에 비해 전압 스파이크 및 전압 파형 왜곡을 줄여 보다 정확한 출력 전압을 발생시킴으로써 용량성 결합 플라즈마 시스템의 안정도 및 정밀도를 향상시킬 수 있다.

• 반도체디스플레이기술학회지
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• 제13권4호
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• pp.1-5
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• 2014

The plasma density distribution in between the electrode and lateral wall of a narrow gap CCP was investigated. The plasma density distribution was obtained using single Langmuir probe, having two peaks of density distribution at the center of electrode and at the peripheral area of electrodes. The plasma density distribution was compared with the RF fluctuation of plasma potential taken from capacitive probe. Ionization reactions obtained from numerical analysis using CFD-$ACE^+$ fluid model based code. The peaks in two region for plasma density and voltage fluctuation have similar spatial distribution according to input power. It was found that plasma density distribution between the electrode and the lateral wall is closely related with the local ionization.

• 한국재료학회지
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• 제14권5호
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• pp.328-333
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• 2004

Transparent ZnO:Al conductor films for the optoelectronic devices were deposited by using the capacitively coupled DC magnetron sputtering method. The effect of Al doping concentration and discharge power on the electrical and optical properties of the films was studied. The film resistivity of $8.5${\times}$10^{-4}$ $\Omega$-cm was obtained at the discharge power of 40 W with the ZnO target doped with 2 wt% $Al_2$$_O3$. The transmittance of the 840 nm thick film was 91.7% in the visible waves. Increasing doping concentration of 3 wt% $Al_2$$O_3$ in ZnO target results in significant decrease of film resistivity, which may be due to the formation of $Al_2$$O_3$ particles in the as-deposited ZnO:Al film and the reduced ZnO grain sizes. Increasing DC power from 40 to 60 W increases deposition rate by more than 50%, but can induce high defect density in the film, resulting in higher film resistivity.

• 한국전자파학회논문지
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• 제9권1호
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• pp.8-15
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• 1998

본 논문에서는 기생패치를 이용한 마이크로스트립 안테나의 대역폭 개선에 관해 논의하였다. 전체 크기를 줄 이기 위해서 $\lambda$/4의 단락패치를 사용하였으며, 접지면 또한 패치의 크기로 절단하였다. 전체 크기를 줄이기 위해서 접지면의 크기를 줄였기 때문에 이에 따른 후방으로의 복사가 일어난다. 설계된 안테나의 특성은 전송선로모 덴과 개구면 해석법에 기초하여 해석하였고 컴퓨터 시뮬레이션을 수행하였다. 시율레이션 결과 후방으로의 상대 복사는 -15 dB정도였다. 제작한 안테나는 2.45 GHz의 중심주파수에서 167 MHz의 매우 넓은 대역폭을 갖는다. 따라서 본 논문에서 제안한 안테나는 광대역 통신시스랩에 응용될 수 있다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1408-1409
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• 2007

In this paper, we developed a hybrid simulation model of carbon laser ablation under the Ar plasmas consisted of fluid and particle methods. Three kinds of carbon particles, which are carbon atom, ion and electron emitted by laser ablation, are considered in the computation. In the present modeling, we adopt capacitively coupled plasma with ring electrode inserted in the space between the substrate and the target, graphite. This system may take an advantage of ${\mu}m$-sized droplets from the sheath electric field near the substrate. As a result, in Ar plasmas, carbon ion motions were suppressed by a strong electric field and were captured in Ar plasmas. Therefore, a low number density of carbon ions were deposited upon substrate. In addition, the plume motions in Ar gas atmosphere was also discussed.

• Journal of information and communication convergence engineering
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• 제11권1호
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• pp.45-49
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• 2013

A compact radio frequency (RF) bandpass filter (BPF) in low temperature co-fired ceramic (LTCC) is suggested for WiMAX applications. The center frequency ($f_0$) of the BPF is 5.5 GHz and its pass band or 3-dB bandwidth is 700 MHz to cover all the three major bands, low and middle unlicensed national information infrastructure (U-NII; 5.15-5.35 GHz), World Radiocommunication Conference (5.47-5.725 GHz), and upper U-NII/industrial, scientific, and medical (ISM) (5.725-5.85 GHz), for the WiMAX frequency band. A lumped circuit element design-the 5th order capacitively coupled Chebyshev BPF topology-is adopted. In order to design a compact RF BPF, a very thin ($43.18{\mu}m$) ceramic layer is used in LTCC substrate. An interdigital BPF is also designed in silicon substrate to compare the size and performance of the lumped circuit element BPF. Due to the high relative dielectric constant (${\varepsilon}_r$ = 11.9) of the silicon substrate, the quarter-wavelength resonator of the interdigital BPF can be reduced. In comparison to the 5th order interdigital BPF at $f_0$ = 5.5 GHz, the lumped element design is 24% smaller in volume and has 17 and 7 dB better attenuation characteristics at $f_0{\pm}0.75$ GHz.

• 전기학회논문지P
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• 제59권4호
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• pp.417-422
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• 2010

Atmosphere Plasma of Gas Discharge (APGD) has been used in plasma sources for material processing such as etching, deposition, surface modification and so on due to having no thermal damages. The APGD researches on AC source with high frequency have been mainly processed. However, DC APGD studies have been not. In order to understand APGD further, it is necessary to study on fundamental properties of DC APGD. In this paper, we developed a one-dimensional fluid simulation model with capacitively coupled plasma chamber at the atmosphere pressure (760 [Torr]). Nine kinds of Ar discharge particles such as electron (e), positive ions ($Ar^+$, $Ar_2^+$) and neutral particles ($Ar_m^*$, $Ar_r^*$, $Ar_h^*$, $Ar_2^*$(1), $Ar_2^*$(3) and Ar gas) are considered in the computation. The simulation was worked at the current range of 1~15 [mA]. The characteristics of voltage-current were calculated and the structure of Joule heating were discussed. The spatial distributions of Ar DC APGD and the mechanism of power consumption were also investigated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.408-411
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure, discharge power and doping amounts of Al on the electrical, optical and morphological properties were investigated experimentally. The effect of bias voltage on the electrical properties of ZnO thin film were also studied. Films with lowest resistivity of $5.4{\times}10^{-4}\;{\Omega}-cm$ have been achieved in case of films deposited at 1mtorr, $400^{\circ}C$ with a substrate bias of +10V for 840nm in film thickness.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.939-942
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• 2004

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors were Prepared by using the capacitively coupled RF magnetron sputtering method. In this paper the effect of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the variation of RF discharge power. The optimum growth conditions were obtained for films doped with 2 wt% of $Al_2O_3$ and 200 W in RF discharge power, which exhibit a resistivity of $10.4{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 89.66 % for 1000nm in films thickness in the wavelength range of the visible spectrum.