• Title/Summary/Keyword: Capacitive sensor

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Design and Implementation of IoT based Urination Management System (사물인터넷 기반의 배뇨관리 시스템 설계 및 구현)

  • Lee, Hak-Jai;Lee, Kyung-Hoon;Kim, Young-Min
    • The Journal of the Korea institute of electronic communication sciences
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    • v.12 no.1
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    • pp.209-218
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    • 2017
  • Healthcare services can be provided through a number of independent service platforms for measurement of vital signs, diagnosis and prevention of diseases, and Information and communication technology(ICT) such as internet and mobile are converged to provide health information to users at anytime and anywhere, and it is in the center of the IoT(Internet of things). Accordingly, in this paper, we designed IoT based urination management system and evaluate the performance. A low - power Zigbee network was constructed for the configuration of the urination management system. The implemented capacitive diaper sensor was operable for the duration of 2,000 hours. We also built a database server using Raspberry Pi, a tiny embedded device, and stored the collected data to verify the data through an Android-based mobile application. The proposed urination management system can be utilized not only for the older patients, but also for the infants.

Development of Error Compensation System and On the Machine Measurement System for Ultra-Precision Machine (초정밀가공기용 오차보상시스템 및 기상측정장치 개발)

  • 이대희;나혁민;오창진;김호상;민흥기;김민기;임경진;김태형
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.599-603
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    • 2003
  • This paper present an error compensation system and On-Machine Measurement(OMM) system for improving the machining accuracy of ultra-precision lathe. The Fast-Tool-Servo(FTS) driven by a piezoelectric actuator is applied for error compensation system. The controller is implemented on the 32bit DSP for feedback control of piezoelectric actuator. The control system is designed to compensates three kinds of machining errors such as the straightness error of X-axis slide, the thermal growth error of the spindle. and the squareness between spindle and X-axis slide. OMM is preposed to measure the finished profile of workpiece on the machine-tool using capacitive sensor with highly accurate ruby tip probe guided by air bearing. The data acquisition system is linked to the CNC controller to get the position of each axis in real-time. Through the experiments, it is founded that the thermal growth of spindle and tile squareness error between spindle and X-axis slide influenced to machining error more than straightness error of X-axis slide in small travel length. These errors were simulated as a sinusoidal signal which has very low frequency and the FTS could compensate the signal less than 30 m. The implemented OMM system has been tested by measuring flat surface of 50 mm diameter and shows measurement error less than 400 mm

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A 10-bit 40-MS/s Low-Power CMOS Pipelined A/D Converter Design (10-bit 40-MS/s 저전력 CMOS 파이프라인 A/D 변환기 설계)

  • Lee, Sea-Young;Yu, Sang-Dae
    • Journal of Sensor Science and Technology
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    • v.6 no.2
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    • pp.137-144
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    • 1997
  • In this paper, the design of a 10-bit 40-MS/s pipelined A/D converter is implemented to achieve low static power dissipation of 70 mW at the ${\pm}2.5\;V$ or +5 V power supply environment for high speed applications. A 1.5 b/stage pipeline architecture in the proposed ADC is used to allow large correction range for comparator offset and perform the fast interstage signal processing. According to necessity of high-performance op amps for design of the ADC, the new op amp with gain boosting based on a typical folded-cascode architecture is designed by using SAPICE that is an automatic design tool of op amps based on circuit simulation. A dynamic comparator with a capacitive reference voltage divider that consumes nearly no static power for this low power ADC was adopted. The ADC implemented using a $1.0{\mu}m$ n-well CMOS technology exhibits a DNL of ${\pm}0.6$ LSB, INL of +1/-0.75 LSB and SNDR of 56.3 dB for 9.97 MHz input while sampling at 40 MHz.

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Development of Multi-Axis Control Program for Long Range AFM Using an FPGA Module (FPGA 모듈을 이용한 Long Range AFM용 다축 제어 프로그램 개발)

  • Lee J.Y.;Eom T.B.;Kim J.W.;Kang C.S.;Kim J.A.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.289-290
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    • 2006
  • In general, atomic force microscope (AFM) used for metrological purpose has measuring range less than a few hundred micrometers. We design and fabricate an AFM with long measuring range of $200mm{\times}200mm$ in X and Y axes. The whole stage system is composed of surface plate, global stage, microstage. By combining global stage and microstage, the fine and long movement can be provided. We measure the position of the stage and angular motions of the stage by laser interferometer. A piezoresistive type cantilever is used for compact and long term stability and a flexure structure with PZT and capacitive sensor is used for Z axis feedback control. Since the system is composed of various actuators and sensors, a real time control program is required for the implementation of AFM. Therefore, in this work, we designed a multi-axis control program using a FPGA module, which has various functions such as interferometer signal converting, PID control and data acquisition with triggering. The control program achieves a loop rate more than 500 kHz and will be applied for the measurement of grating pitch and step height.

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A Study on the Improvement of Voltage Measuring Method of 22.9 kV-y Distribution Lines (22.9 kV-y 배전선로의 전압계측방법 개선에 관한 연구)

  • Kil, Gyung-Suk;Song, Jae-Yong
    • Journal of Sensor Science and Technology
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    • v.7 no.4
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    • pp.293-299
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    • 1998
  • An objective of this study is to develop a voltage measuring device that uses a gas-filled switch (GS) on 22.9 kV-y extra-high voltage distribution lines. The voltage measuring device proposed in this paper is a kind of capacitive divider which consists of a detecting electrode attached outside of the bushing of GS, an impedance matching circuit, and a voltage buffer. It can be easily installed in an established GS without changing the structure. For the calibration and application investigations, the voltage measuring device was set up in the 25.8 kV 400 A GS, and a step pulse generator having 5 ns rise time is used. As a result, it was found that the frequency bandwidth of the voltage measuring device ranges from 1.35 Hz to about 13 MHz. The error of voltage dividing ratio which is evaluated by the commercial frequency voltage of 60 Hz was less than 0.2%. In addition, voltage dividing ratio in the commercial frequency voltage and in a non-oscillating impulse voltage were compared, and their deviation were less than 0.7%.

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Development of Flexure Applied Bond head for Die to Wafer Hybrid Bonding (Die to Wafer Hybrid Bonding을 위한 Flexure 적용 Bond head 개발)

  • Jang, Woo Je;Jeong, Yong Jin;Lee, Hakjun
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.4
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    • pp.171-176
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    • 2021
  • Die-to-wafer (D2W) hybrid bonding in the multilayer semiconductor manufacturing process is one of wafer direct bonding, and various studies are being conducted around the world. A noteworthy point in the current die-to-wafer process is that a lot of voids occur on the bonding surface of the die during bonding. In this study, as a suggested method for removing voids generated during the D2W hybrid bonding process, a flexible mechanism for implementing convex for die bonding to be applied to the bond head is proposed. In addition, modeling of flexible mechanisms, analysis/design/control/evaluation of static/dynamics properties are performed. The proposed system was controlled by capacitive sensor (lion precision, CPL 290), piezo actuator (P-888,91), and dSpace. This flexure mechanism implemented a working range of 200 ㎛, resolution(3σ) of 7.276nm, Inposition(3σ) of 3.503nm, settling time(2%) of 500.133ms by applying a reverse bridge type mechanism and leaf spring guide, and at the same time realized a maximum step difference of 6 ㎛ between die edge and center. The results of this study are applied to the D2W hybrid bonding process and are expected to bring about an effect of increasing semiconductor yield through void removal. In addition, it is expected that it can be utilized as a system that meets the convex variable amount required for each device by adjusting the elongation amount of the piezo actuator coupled to the flexible mechanism in a precise unit.

Recent Research Trends in Touchscreen Readout Systems (최근 터치스크린 Readout 시스템의 연구 경향)

  • Jun-Min Lee;Ju-Won Ham;Woo-Seok Jang;Ha-Min Lee;Sang-Mo Koo;Jong-Min Oh;Seung-Hoon Ko
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.5
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    • pp.423-432
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    • 2023
  • With the increasing demand for mobile devices featuring multi-touch operation, extensive research is being conducted on touch screen panel (TSP) Readout ICs (ROICs) that should possess low power consumption, compact chip size, and immunity to external noise. Therefore, this paper discusses capacitive touch sensors and their readout circuits, and it introduces research trends in various circuit designs that are robust against external noise sources. The recent state-of-the-art TSP ROICs have primarily focused on minimizing the impact of parasitic capacitance (Cp) caused by thin panel thickness. The large Cp can be effectively compensated using an area-efficient current compensator and Current Conveyor (CC), while a display noise reduction scheme utilizing a noise-antenna (NA) electrode significantly improves the signal-to-noise ratio (SNR). Based on these achievements, it is expected that future TSP ROICs will be capable of stable operation with thinner and flexible Touch Screen Panels (TSPs).

Porous silicon : a new material for microsensors and microactuators (다공질 실리콘: 새로운 마이크로센서 및 마이크로액추에이터 재료)

  • Min Nam Ki;Chi Woo Lee;Jeong Woo Sik;Kim Dong Il
    • Journal of the Korean Electrochemical Society
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    • v.2 no.1
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    • pp.17-22
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    • 1999
  • Since the use of porous silicon for microsensors and microactuators is in the euly stage of study, only several application devices, such as light-emitting diodes and chemical sensors have so far been demonstrated. In this paper we present an overview of the present status of porous silicon sensors and actuators research with special emphasis on the applications of chemical sensors and optical devices. The capacitive type porous silicon humidity sensors had a nonlinear capacitance-humidity characteristic and a good sensitivity at higher humidity above $40\%RH$. The porous silicon $n^+-p-n^+$ device showed a sharp increase in current when exposed to an ethanol vapor. The $p^+-PSi-n^+$ diode fabricated on porous silicon diaphragm exhibited an optical switching characteristic, opening up its utility as an optical sensor or switch. The photoluminescence (PL) spectrum, taken from porous silicon under 365 nm excitation, had a broad emission, peaked at -610 nm. The electroluminescence(EL) from ITO/PSi/In LED had a broader spectrum with a blue shifted peak at around 535nm than that of the PL.

Growth of Tin Dioxide Nanostructures on Chemically Synthesized Graphene Nanosheets (화학적으로 합성된 그래핀 나노시트 위에서의 이산화주석 나노구조물의 성장)

  • Kim, Jong-IL;Kim, Ki-Chul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.5
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    • pp.81-86
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    • 2019
  • Metal oxide/graphene composites have been known as promising functional materials for advanced applications such as high sensitivity gas sensor, and high capacitive secondary battery. In this study, tin dioxide ($SnO_2$) nanostructures were grown on chemically synthesized graphene nanosheets using a two-zone horizontal furnace system. The large area graphene nanosheets were synthesized on Cu foil by thermal chemical vapor deposition system with the methane and hydrogen gas. Chemically synthesized graphene nanosheets were transferred on cleaned $SiO_2$(300 nm)/Si substrate using the PMMA. The $SnO_2$ nanostuctures were grown on graphene nanosheets at $424^{\circ}C$ under 3.1 Torr for 3 hours. Raman spectroscopy was used to estimate the quality of as-synthesized graphene nanosheets and to confirm the phase of as-grown $SnO_2$ nanostructures. The surface morphology of as-grown $SnO_2$ nanostructures on graphene nanosheets was characterized by field-emission scanning electron microscopy (FE-SEM). As the results, the synthesized graphene nanosheets are bi-layers graphene nanosheets, and as-grown tin oxide nanostructures exhibit tin dioxide phase. The morphology of $SnO_2$ nanostructures on graphene nanosheets exhibits complex nanostructures, whereas the surface morphology of $SnO_2$ nanostructures on $SiO_2$(300 nm)/Si substrate exhibits simply nano-dots. The complex nanostructures of $SnO_2$ on graphene nanosheets are attributed to functional groups on graphene surface.