• Title/Summary/Keyword: Capacitance measurement

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Analysis of Frequency Response Characteristics in Optical Microphone (광 마이크로폰의 주파수 응답특성 분석)

  • Yeom, Keong-Tae;Kim, Kwan-Kyu;Heh, Do-Geun;Kim, Yong-Kab
    • The Journal of the Korea Contents Association
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    • v.8 no.6
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    • pp.8-15
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    • 2008
  • In this paper, in order to analyze property of frequency response in optical microphone, system was implemented. The capacitance microphone and fiber-optic transmission path type fiber-optic microphone (FOM) have weaknesses in directivity, size, weight, and price. However suggested optical microphone can be constituted by cheap devices, so it has many benefits like small size, light weight, high directivity, etc. Head part of optical microphone which is suggested in this paper is movable back and forth by sound pressure with the attached reflection plate. Operating point is determined by measuring the respond characteristics and choosing the point on which has maximum linearity and sensitivity while changing the distance between optical head and vibrating plate. We measured the output of the O/E transformed signal of the optical microphone while frequency of sound signal is changed using sound measurement/analysis program, Smaart Live and USBPre, which are based on PC, and compared the result from an existing capacitance microphone. The measured Optical microphone showed almost similar output characteristics as those of the compared condenser microphone, and its bandwidth performance was about 300[Hz]-3[kHz] at up to 3 [dB].

Dielectric and electric properties of sol-gel derived PZT thin Films (솔-젤법으로 제조한 PZT박막의 유전 및 전기적 특성)

  • Hong, Kwon;Kim, Byong-Ho
    • Electrical & Electronic Materials
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    • v.9 no.3
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    • pp.251-258
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    • 1996
  • Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

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The Contact Characteristics of Ferroelectrics Thin Film and a-Si:H Thin Film (강유전성 박막의 형성 및 수소화 된 비정질실리콘과의 접합 특성)

  • 허창우
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.3
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    • pp.468-473
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    • 2003
  • In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C∼600^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1 ∼ 1.5 MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Meta1/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectric.

Scalable AlGaN/GaN HEMTGs Model Including Thermal Effect (스케일링이 가능한 AlGaN/GaN HEMT 소자의 열 모델에 관한 연구)

  • 김동기;김성호;오재응;권영우
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.7
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    • pp.705-711
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    • 2003
  • In this Paper, 2${\times}$100 $\mu\textrm{m}$ AlCaN/GaN HEMT's(on sapphire substrate) large signal model including thermal effect was extracted. An equation based empirical model was employed to make large signal model for convergence and high speed. Pulsed I-V measurement was performed to extract thermal resistance and capacitance. Power amplifiers with 9 mm and 15 mm AlCaN/GaN HEMTS were designed using scaled modeling results of 2${\times}$100 $\mu\textrm{m}$ device respectively. From comparisons between measured and simulated data, the model considering of thermal effects gave better agreement than without one. It demonstrates that thermal modeling must be performed for power amplifier that uses large size transistors.

Design of DC Level Shifter for Daisy Chain Interface (Daisy Chain Interface를 위한 DC Level Shifter 설계)

  • Yeo, Sung-Dae;Cho, Tae-Il;Cho, Seung-Il;Kim, Seong-Kweon
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.5
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    • pp.479-484
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    • 2016
  • In this paper, a design of DC level shifter transmitting and receiving control and data signal which have various DC level through daisy chain interface between master IC and slave is introduced in the cell voltage monitoring (CVM). Circuit designed with a latch structure have a function to operate in high speed and for output of variable DC level through transmission gate. As a result of the simulation and the measurement, it was confirmed that control and data signal could be transferred according to the change of DC level from 0V to 30V. Delay time was measured about 170ns. but, it was considered as a negligible tolerance due to a parasitic capacitance of measuring probe and test board.

Analysis of Meridian Energy and its Change Pattern with Time using Measurement of Skin-Capacitance on Source Points (체표 캐패시턴스 측정 방식을 이용한 체표 경락.경혈 에너지 변화 분석)

  • Kim, Soo-Byung;Kwon, Sun-Min;Myoung, Hyoun-Seok;Lee, Kyoung-Joung;Kang, Hee-Jung;Yim, Yun-Kyoung;Lee, Yong-Heum
    • Korean Journal of Acupuncture
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    • v.26 no.3
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    • pp.1-11
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    • 2009
  • Objectives : The object of this study is to investigate the balance/imbalance of skin capacitances between left and right meridians, and to analyze the change patterns of electric energy on meridians with the lapse of time. Method : Electric potential was measured on five source points (LU9, PC7, HT7, LI4, SI4) bilaterally for 4 hours. The energy balance/imbalance between left and right was investigated, and the change patterns with time were analyzed. Results and Conclusions : The amplitude of meridian energy on five source points and the energy balance/imbalance between left and right were varied in each individual. When a source point showed a balanced meridian energy bilaterally, the change patterns of meridian energy with time were similar between left and right. While, when it showed an imbalanced energy between left and right, the change patterns of meridian energy were also different between left and right. Through this study, we proposed a new diagnostic method of meridian energy.

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Process Modeling and Optimization Studies in Drying of Current Transformers

  • Bhattacharya, Subhendu;D'Melo, Dawid;Chaudhari, Lokesh;Sharma, Ram Avatar;Swain, Sarojini
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.6
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    • pp.273-277
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    • 2012
  • The vacuum drying process for drying of paper in current transformers was modeled with an aim to develop an understanding of the drying mechanism involved and also to predict the water collection rates. A molecular as well as macroscopic approach was adopted for the prediction of drying rate. Ficks law of diffusion was adopted for the prediction of drying rates at macroscopic levels. A steady state and dynamic mass transfer simulation was performed. The bulk diffusion coefficient was calculated using weight loss experiments. The accuracy of the solution was a strong function of the relation developed to determine the equilibrium moisture content. The actually observed diffusion constant was also important to predict the plant water removal rate. Thermo gravimetric studies helped in calculating the diffusion constant. In addition, simulation studies revealed the formation of perpetual moisture traps (loops) inside the CT. These loops can only be broken by changing the temperature or pressure of the system. The change in temperature or pressure changes the kinetic or potential energy of the effusing vapor resulting in breaking of the loop. The cycle was developed based on this mechanism. Additionally, simulation studies also revealed that the actual mechanism of moisture diffusion in CT's is by surface jumps initiated by surface diffusion balanced against the surrounding pressure. Every subsequent step in the cycle was to break such loops. The effect of change in drying time on the electrical properties of the insulation was also assessed. The measurement of capacitance at the rated voltage and one third of the rated voltage demonstrated that the capacitance change is within the acceptance limit. Hence, the new cycle does not affect the electrical performance of the CT.

Extraction of Material Parameters and Design of Schottky Diode UV Detectors Using a Transfer Matrix Method (전달 행렬 방법을 이용한 Schottky 다이오드 자외선 광검출기의 물질특성 추출과 설계)

  • Kim Jin-Hyung;Kim Sang-Bae
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.5 s.347
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    • pp.25-33
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    • 2006
  • We have extracted the material parameters such as absorption coefficients of GaN, $Al_{0.2}Ga_{0.8}N$, and Schottky contact metal Ni of Schottky Diode UV-A and B detectors using a transfer matrix method (TMM). The ratios of the absorbed light to the total incident amount at the depletion regions of GaN and $Al_{0.2}Ga_{0.8}N$ have been calculated in order to obtain the spectral responsivity. Absorption coefficients of the materials have been obtained by fitting the simulated data with measured data. The depletion layer thickness has been obtanied by capacitance-voltage measurement. The results pave the way for the optimum design of UV Schottky detectors. Since the absorption coefficient of the Ni electrode is very high, its thickness is a major factor that determines the responsivity. It is possible to attain improved UV detectors using thinnest possible Ni electrodes and wide depletion regions of GaN and $Al_{0.2}Ga_{0.8}N$.

A Distribution Chart Analysis of Electric Energy on Specific Acupoints in the Identical Meridian Pathway (동일 경락상의 요혈(要穴)에서 체표 에너지 분포도 분석)

  • Kim, Soo-Byung;Min, Choong-Ki;Lee, Na-Ra;Lee, Seung-Wook;Shim, Tae-Kyu;Yim, Yun-Kyoung;Lee, Yong-Heum
    • Korean Journal of Acupuncture
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    • v.26 no.4
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    • pp.1-11
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    • 2009
  • Objectives : The object of this study is measuring energy (skin capacitance) distribution on the specific acupionts and analyzing change patterns of meridian energy according to time or synchronous time. Methods : To check energy distribution using the meridian energy measurement system(DMM-1000), ten specific acupoints(ST34, ST36, ST40, ST41, ST42, ST43, ST44, ST45, BL21, CV12) were chosen. We checked the energy distribution and analyzed the change patterns before and after meal. We checked the state of the energy of ST meridian which is considered to have relation to stomach organ activity. Based on the hypothesis regarding energy difference due to Qi flowing, we compared energy potential on 10 specific acupoints. Results and Conclusions : Electric energy of each specific acupoint was different according to subjects and time. Through this study, we proposed an indispensable condition of energy difference due to Qi flowing through meridian.

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Analysis of Relative Wave Elevation Around Semi-submersible Platform Through Model Test: Focusing on Comparison of Wave Probe Characteristics

  • Nam, Hyun-Seung;Park, Dong-Min;Cho, Seok Kyu;Hong, Sa Young
    • Journal of Ocean Engineering and Technology
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    • v.36 no.1
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    • pp.1-10
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    • 2022
  • Recently, as the offshore structures are operated in the deep-sea oil fields, interest in the analysis of relative wave elevation around platforms is increased. In this study, it is examined how the analysis results differ depending on the characteristics of the wave probe when interpreting the relative wave elevation in the model test. First, by conducting the wave probe comparison experiment in the two-dimensional wave tank, it is confirmed how the measured values differ according to the type of wave probe for the same physical phenomenon. Two types of wave probe are selected, the resistance type and the capacitance type, and the causes of the difference in measured values is studied. After that, the model test of the semi-submersible platform is conducted to investigate the relative wave elevation. Relative wave elevation is measured with the wave probes used in the wave probe comparison experiment and analyzed to estimate the asymmetric factor and the extreme upwell. The results between the two types of wave probes are compared, and qualitative study for the cause of the difference is conducted by photographing the physical phenomenon using a high-speed camera. Through the above study, it is confirmed that the capacitance type wave probe shows a larger measured value than the resistance type under the breaking-wave condition, and the same results are obtained for the asymmetric factor and the extreme upwell. These results is thought to be due to the difference in the measurement principle between wave probes, which is whether or not they measured water bubbles. This implies that the model test should be conducted using appropriate wave probes by considering the physical phenomenon to be analyzed.