• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.217-221
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• 2000

The gate oxide thickness is becoming thinner and thinner in order to speed up the semiconductor CMOS devices. We have investigated very thin$ SiO_2$ gate oxide layers and found anomaly between the thickness determined with capacitance measurement and these obtained with cross-sectional high resolution transmission electron microscopy. The thicknesses difference of the two becomes important for the thickness of the oxide below 5nm. We propose that the variation of dielectric constant in thin oxide films cause the anomaly. We modeled the behavior as (equation omitted) and determined $\varepsilon_{bulk}$=3.9 and $\varepsilon_{int}$=-4.0. We predict that optimum $SiO_2$ gate oxide thickness may be $20\AA$ due to negative contribution of the interface dielectric constant. These new results have very important implication for designing the CMOS devices.s.

• Bulletin of the Korean Chemical Society
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• v.13 no.1
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• pp.30-32
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• 1992

The apparent depth of space charge region on the ZnO $(10{\bar{1}}0)$ surface in chemisorption of oxygen has been estimated from the capacitance of two contacting faces. When the sample (donor concentration: $2.4{\times}10^{22}\;m^{-3}$) was evacuated at 773 K for 1 hr the depth reached to 40-100 ${\AA}$ depending on sample assembly. Admission of oxygen to the sample resulted in an increase of the depth to 3600 ${\AA}$ where the increment was greater at higher oxygen pressure between 6.6-1600 $N/m^2$. Admission of CO to the sample previously exposed to oxygen yields a decrease in the depth. The results of the measurement support that oxygen is adsorbed as an acceptor on ZnO $(10{\bar{1}}0)$.

• Bulletin of the Korean Chemical Society
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• v.18 no.11
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• pp.1175-1179
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• 1997

The adsorption of oxygen on ZnO was monitored by measuring the capacitance of two contacting crystals which have depletion layers originated from the interaction between oxygen and ZnO at 298 K-473 K. An admission of oxygen to the sample induced an irreversible increase in the depth and the amount of adsorbed oxygen was less than 0.001 monolayer in the experimental condition. The relation between pressure of oxygen and variation of the depth was tested from the view point of Langmuir or Freundlich isotherm. Using Hall effect measurement and kinetic experiment, a model equation on the adsorption process was proposed. From the results, it was suggested that oxygen adsorption depended on the rate of electron transfer from ZnO to oxygen while the amount of adsorbed oxygen was kinetically restricted by the height of surface potential barrier.

• Journal of the Semiconductor & Display Technology
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• v.18 no.1
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• pp.70-73
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• 2019

It was confirmed that current flowing in thin films below nm increases conductivity in diffusion currents by holes rather than electric currents by electrons. ZTO thin film, which was heat treated at $150^{\circ}C$, increased electron concentration, and thus increased capacitances. However, it was found that low current movement would be difficult as the degree of movement was reduced. Therefore, it was found that diffusion currents were more advantageous than drift currents by electrons in order to allow low current to be produced in very thin films of nm class.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.103-107
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• 2021

In this paper, a capacitive water level sensor for boilers was developed. In order to accurately monitor the water level in a high-temperature boiler that generates a lot of precipitates, the occurrence of precipitates on the surface of the water level sensor should be small, and a sensor capable of measuring even if the sensor surface is somewhat contaminated is required. The capacitive water level sensor has a structure in which one of the two electrodes is insulated with Teflon coating, and the stainless steel package of the water level sensor is brought into contact with the water tank so that the entire water tank becomes another electrode of the water level sensor. A C-V converter that converts the capacitance change of the capacitive water level sensor into a voltage change was developed and integrated with the water level sensor to minimize noise. The performance of the developed capacitive water level sensor was evaluated through measurement.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2021.11a
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• pp.59-60
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• 2021

The unit-water content has a major problem in concrete structures which leads to micro cracks on the concrete during drying time. Thus, the compressive strength and durability of the concrete structures are significantly reduced. Several techniques have been developed to measure the unit-water content in concrete structures such as heating drying, unit volume mass, and capacitance measurements. However, these techniques have problems in during measurement such as longer time, expensive and difficult in analysis of data. Frequency Domain Reflectivity (FDR) is one of the sensors which used to measure the water content. This method has several advantages including easy to measure, inexpensive, and capable of measuring moisture in real time. In this study, an attempt has been made to evaluate the unit-water content in concrete using the FDR sensor and interpret the data with deep learning method.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.259-269
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• 2013

In this paper, we propose an SIW(Substrate Integrated Waveguide) multi-section E-plane transformer using air-holes for an SIW system with variable thicknesses. Air-holes are inserted into a SIW E-plane quarter wavelength transformer for matching an E-plane impedance discontinuity. A PSIW(Punched Substrate Integrated Waveguide) consisted of air-holes has an SIW characteristic impedance tunability because of reducing a equivalent shunt capacitance of the SIW. And, a PSIW multi-section E-plane transformer is implemented for improving a matching bandwidth by using the Chebyshev polynomial. The measurement results of PSIW double-section E-plane transformer show that the insertion loss($S_{21}$) is $1.57{\pm}0.11$ dB and input return loss($S_{11}$) is more than 15 dB from 11.45 GHz to 13.6 GHz.

• Polymer(Korea)
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• v.36 no.6
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• pp.756-760
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• 2012

In this work, the coal tar pitch-based activated carbons (ACs) were prepared by KOH activation for electrode materials of supercapacitor. The effects of activation temperature on electrochemical performance of the ACs were investigated with cyclic voltammogram (CV) measurement. The textural and morphological properties of the ACs were measured by adsorption isotherms and field emission scanning electron microscope (FE-SEM) analyses, respectively. The experimental results indicated that the specific capacitance of the ACs increased with developing the micropore volume by activation temperature. As a result the specific capacitance of the ACs increased, owing to the development of micro pore volume of the ACs.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.5
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• pp.791-796
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• 2017

In this study, we investigated the influence of the fabrication process of stacked capacitors on the cell capacitance by using Load Lock (L/L) LPCVD system for dielectric thin film of DRAM capacitor. As a result, it was confirmed that the capacitance difference of about 3-4 fF is obtained by reducing the effective thickness of the oxide film by about $6{\AA}$ compared to the conventional non-L/L device. In addition, Cs was found to be about 3-6 fF lower than the calculated value, even though the measurement range of the thickness of the nitride film as an insulating film was in a normal management range. This is because the node poly FI CD is managed at the upper limit of the spec, resulting in a decrease in cell surface area, which indicates a Cs reduction of about 2fF. Therefore, it is necessary to control the thickness of insulating film and CD management within 10% of the spec center value in order to secure stable Cs.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.501-504
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at 150$^{\circ}C$ ∼ 600$^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1∼1.5MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectrics.