• Electrical & Electronic Materials
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• v.9 no.5
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• pp.470-475
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• 1996

Fiber-textured diamond films have been deposited on scratched silicon(100) substrate by micro wave .plasma enhanced chemical vapor deposition at the condition of micro wave power : 950 W, pressure : 60 torr, H$_{2}$ gas flow rate : 50 sccm, CH$_{4}$ gas flow rate : 1.5 sccm, substrate temperature : about 900.deg. C and deposition time : 20 hours. The films were characterized by mean of scanning electron microscopy, Raman spectroscopy and X-ray analysis.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.648-655
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• 2000

Synthesis of the crystalline film was investigated under the diamond growth condition with altering the addition of the nitrogen from 0% to 95%. With increasing the nitrogen concentration, surface morphology of the film was changed from the diamond film with {100} growth plane to the non-faceted diamond film with nano-scale grains. It also showed that the deposition of the diamond film could be synthesized using only methane and nitrogen gases without hydrogen gas. Separated particles with diamond structure showed an octahedral shaped I the nitrogen ranges between 30% and 80%, and newly formed hexagonal crystals are observed when substrate temperature with diamond structure, however, also identify that the hexagonal crystal was SiCN composite composed of Si, C and N atoms.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.786-788
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• 1998

Synthetic diamond films were deposited on pretreated silicon substrate in activated gas phase using RF plasma-assisted CVD. We investigated the influence of $O_2$ gas on facets of diamond crystal. In $H_2-CH_4-O_2$ gas mixture, the increase of oxygen concentration lead to well-faceted diamond particles and increasing crystallinity of diamond films. The deposited diamond films were analyzed by SEM, XRD, Raman spectroscopy.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.5
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• pp.318-323
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• 2000

The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD (chemical vapor deposition) was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate of diamond were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The threshold energy density from the experiment for etching of pure crystalline diamond was about $1.7J/cm^2$ and fairly matched the simulation value. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. When the angle of incidence was $80^{\circ}$ to the diamond surface normal, the peak-to-valley surface roughness was Significantly reduced from $20{\mu}m$ to $0.5{\mu}m$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.10
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• pp.1037-1043
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• 1990

Diamond thin films were synthesized from the mixed gases of methane and hydrogen on silicon substrates by RF plasma chemical vapor deposition and deposited films were investigated by SEM, X-ray diffractometry and Raman spectroscopy. It is found that high quality diamond-like carbon films were successfully synthesized by PECVD under the deposition condition of 1-10 vol% of methane concentration, 0.15-0.4torr of reactor pressure, 500W of RF power, and 5-20hr of reaction time. Especially, cubo-octahedral diamond-like carbon particles were synthesized by employing 1.0 vol % of methane concentration and 0.4torr of the reactor pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.552-556
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• 1998

Diamond thin films were deposited on Si substrate using $CH_4 and H_2$mixed gas by RF plasma CVD. Prior to deposition, the substrate surface was mechanically scratched with the diamond paste of $3{\mu}m$ to improve the density of nucleation sites. The microstructure of diamond films deposited with methane(0.5%~2%) at the reaction pressure ranging from 20 torr to 50torrr were studied by a scanning electron microscope. It was observed in the deposited diamond films that the nucleation density decreased and crystallinity increased with decreasing the methane concentration. However, the nucleation density and crystallinity were decreased with decreasing the process pressure.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.270-273
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• 2002

Conditioning은 CMP(Chemical Mechanical Planarization)에 필수적인 공정중의 하나이다. Conditioning의 목적은 removal rate와 uniformity를 CMP 공정 중에서 일정하게 유지시키는데 목적이 있다. 예전의 conditioning disks는 stainless steel substrate 위에 diamond 입자를 올리고 Ni전기도금을 결합시켜서 사용하였다. 그러나, CMP 공정 중에 Ni의분해로 인한 금속의 오염과 diamond abrasive의 분리로 인하여 scratch 문제가 발생하였다. 이 문제를 해결하기 위해서 ceramic substrate와 그것을 정밀 가공하는 기술을 응용함으로써 본래의 conditioning disks가 가지고 있는 diamond 입자의 분리와 metals 분해의 문제를 해결할 수 있게 되었다.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.200-203
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• 2000

Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.

• Journal of the Korean institute of surface engineering
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• v.28 no.3
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• pp.133-141
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• 1995

The deposition characteristics of diamond films were investigated for three different substrates : Si, Inconel 600 and steel. Diamond films were prepared by microwave plasma CVD method using $CH_4$, $H_2$ and $O_2$ as reaction gases. The deposited films were analyzed with SEM, Raman spectroscopy and ellipsometer. For Si substrate, diamond films were successfully obtained for most of the deposition conditions used in this study. As the $CH_4$ flow rate decreased and the $O_2$ flow rate increased, the quality of the film was improved due to the reduced non-diamond phase in the film. For Inconel 600 substrate, the surface pretreatment with diamond powders was required to deposit a continuous diamond film. The films deposited at temperatures of $600^{\circ}C$ and $700^{\circ}C$ had mainly diamond phase, but they were peeled off locally due to the difference in the thermal expansion coefficient between the substrate and the deposited films. The films deposited at $500^{\circ}C$ and $850^{\circ}C$ had only the graphitic carbon phase. For steel substrate, all of the films deposited had only the graphitie carbon phase. We speculated that the formation of diamond nuclei on the steel substrate was inhibited due to the diffusion of carbon atoms into the steel substrate which has a large amount of carbon solubility.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.356-360
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• 2001

Properties of a free-standing diamond wafer with a diameter of 80 mm and a thickness of 900~950 $mu extrm{m}$ deposited by the multi-cathode direct current plasma assisted chemical vapor deposition (MCDC PACVD) method were investigated. Defects of the diamond film were observed by optical transmission microscopy and its crystallinity was characterized by Raman and IR spectroscopy. Defects were distributed partially on boundaries of the grain. In the grain, (111) plane contained a higher defect density than that on (100) plane. FWHM of Raman diamond peak and IR transmission at 10.6 $\mu\textrm{m}$ were 4.6 $\textrm{cm}^{-1}$ /~5.3 $\textrm{cm}^{-1}$ and 51.7 ~ 61.9 %, and their uniformity was $\pm$7% and $\pm$9%, respectively. The diamond quality decreased with going from center to edge of the wafer.