• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.269-274
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• 1997

Silicon carbide(SiC) epilayers were grown by a thermal CVD(chemical vapor deposition) process, and their crystalline properties were investigated. Especially, the growth conditions of 6H-Sic homoepitaxial layers were obtained using a SiC-uncoated graphite susceptor that utilized Mo-plates. In order to investigate the crystallinity of grown layers, Nomarski photograph, transmittance, XRD, Raman, PL and TEM measurements were used. The best quality of 6H-SiC epilayers was obtained in conditions of growth temperature 1500$^{\circ}C$ and C/Si ratio 2.0.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.344.2-344.2
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• 2016

Fully and partially grown hexagonal boron nitride (h-BN) on Cu foil, synthesized by chemical vapor deposition method, was studied using Raman and SEM measurements. Fully and partially grown samples were successfully made from borane-ammonia complex to controlling pressure and growth time. The fully grown h-BN and partially grown h-BN exhibits a ~ 1370 cm-1 B-N vibrational mode (E2g). Especially, well-aligned triangular h-BN monolayer was observed on some domain of Cu foil using SEM measurements.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.43-43
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• 2003

Carbon nanotubes(CNTs) have many application points, which are field emission devices, composites, hydrogen storage, nanodevices, supercapacitor and secondary battery. The most promising application point is emitter tip mays of field emission devices. Furthermore, it may be also useful as a vacuum device for high frequency and high power. But, there are some obstacles to fabricate carbon nanotube field emission device. One is that CNTs grown by CVD method has weak adhesion with substrate and the other is non-uniform length of them. These problems are very crucial in aging property and reliability of device in the field emission.

• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.388-392
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• 2001

저압 화학증착법으로 등방성 흑연 기판 위에 탄화규소 증착층을 제조하였다. 반응관 내부의 전체 반응압력(이하 반응압력)을 1.5torr-100torr로 변화시켜 증착층의 미세구조에 미치는 영향을 조사하였다. 120$0^{\circ}C$ 이하에서는 전체 반응압력 변화에 상관없이 일정하게 낮은 증착속도를 보였으며, 미세구조는 round-top 구조를 나타내었다. 125$0^{\circ}C$, 10torr를 기준으로 증착온도와 반응압력이 증가함에 따라 미세구조가 round-top 구조에서 angular, faceted 구조로 변하였으며, 이는 반응압력이 증가함에 따라 증착기구가 표면반응에서 물질전달로 전이하였기 때문이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1096-1100
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• 2008

This report examines the variations on structural properties of $SnO_2$ thin films deposited by using thermal chemical vapor deposition techniques with different oxygen flow gas. TEM showed some of the interface to be atomically rough. The aspects of the boundary shape and growth behavior agree well with the theory of interface growth. The electron diffraction showed that the roughness was changed as the different oxygen flow gas increased. These measurement results suggested that the number of interface facet and abnormal grain growth were related oxygen flow gas.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1351_1352
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• 2009

We deposited $SnO_2$:F thin films by atomospheric pressure chemical vapor deposition(APCVD) on corning glass. $SnO_2$:F films were used as transparent conductive oxide (TCO) electrode for Si thin film solar cells. We have investigated structural, electrical and optical properties of $SnO_2$:F thin films and fabricated thin film Si solar cells by plasma enhanced CVD(PECVD) on $SnO_2$:F thin films The cells were characterized by I-V measurement using AM1.5 spectra. Conversion efficiency of our cells were between 5.61% and 6.45%.

• Journal of Korean Society for Atmospheric Environment
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• v.16 no.4
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• pp.389-398
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• 2000

Photocatalytic removal of benzene from air was examined using titanium dioxide photocatalyst films prepared on soda lime glass(50$\times$50$\times$2 mm) by spin coating and chemical vapor deposition. For the measurement of photocatalytic reactivity titanium dioxide coated glass was placed into a batch reactor and concentration of benzene in the reactor was set to abuot 100 ppm, and then illuminated with UV. It was found that catalytic reactivity of titanium dioxide films increased with the increase of titanium dioxide film thickness and then level off beyond a certain film thickness. UV absorption by the films showed the similar trend. The formation of stoichiometric amount of carbon dioxide was confirmed by measurement of carbon dioxide concentration in the reactor. In general spin coated films revealed better photocatalytic reactivity than chemically deposited one within the experimental ranges covered in this study. Morphology and crystal structure of prepared films were investigated by XRD and SEM and they showed significant difference between spin coated films and CVD films. Highest quantum efficiency of prepared titanium dioxide photocatalyst was close to 50%.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.3
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• pp.121-124
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• 2002

CNTs(Carbon Nano Tube) were employed as an electron source in electron-gun of CRT(Cathode-Ray Tube). The CNTs were grown on the Si substrates and the electron gun by LP-CVD(Low Pressure-Chemical Vapor Deposition). Their physical and field emission property satisfied the requirements of the electron gun of CRT. The fabricated electron gun was inserted into 19 inch-sifted CRT and its operating properly was evaluated for practical usage.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.856-857
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• 1998

Hydrogenated amorphous carbon nitride [a-C:H(N)] films were deposited on pretreated silicon(100) substrate in activated gas phase using. RF plasma-assisted CVD. We measured the FT-IR spectrum to investigate $C{\equiv}N$ stretching mode(nitrile), C-H stretching mode, C-H bending mode, C=C stretching mode C=N(imino) mode, and the EDX to investigate the ratio of N to C(0.25). By the results of FT-IR and EDX spectrum, We confirmed that hydrogenated amorphous carbon nitride films successfully were synthesized by RF-PACVD

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.41-45
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• 2012

We observed that in chemical vapor deposition (CVD) tungsten silicide (WSix) poly gate scheme, the gate oxide thickness decreases as gate length is reduced, and it intensifies the roll-off properties of transistor. This is because the fluorine diffuses laterally from WSix to the gate sidewall oxide in addition to its vertical diffusion to the gate oxide during gate re-oxidation process. When the channel length is very small, the gate oxide thickness is further reduced due to a relative increase of the lateral diffusion than the vertical diffusion. In DRAM cells where the channel length is extremely small, we found the thinned gate oxide is a main cause of poor retention time.