• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2008년도 추계학술발표논문집
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• pp.354-357
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• 2008

본 연구는 광전자촉매 시스템(PECS) 적용을 위하여 광촉매 금속판과 코팅비드를 제조하여 특성을 고찰하였다. 광촉매 물질의 회수가 용이하고, 실용화하기 위하여 티타늄 금속판을 $400^{\circ}C$에서 $700^{\circ}C$까지 $50^{\circ}C$에서 $100^{\circ}C$간격으로 토치를 사용하여 산화처리 하였으며, 비드의 경우 alumina, glass, silica gel beads에 TTIP([Ti$(OC_3H_7)_4$], Aldrich)을 전구체로 사용하여, 유동층 화학기상증착공정(Fluidized Bed Chemical Vapor Deposition, FB-CVD)으로 박막코팅을 하였다. 광촉매 금속판의 경우 산화처리 후 외관상태와 성분분석 시 최적조건은 $400^{\circ}C{\sim}500^{\circ}C$ 60분간 토치로 산화하였을 때였으며, 광촉매 코팅비드의 경우 silica gel beads가 본연의 다공구조를 나타내며 박막코팅이 되어, 상대적으로 alumina, glass beads에 비해 반응표면적이 크게 나타났다.

• 한국표면공학회지
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• 제29권5호
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• pp.519-524
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• 1996

We synthesized semiconducting Sn-doped diamondlike carbon films by rf plasma-enhanced chemical vapor deposition using an organotin compound as a dopung gas source. XPS quan-titative analysis for the deposited films after 60 s argon ion etching revealed that Sn concen-tration increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C-Su bond which had a negative chemical shift. C 1s spectra also indicated that the deposited films were relatively $sp^2$ rich. The chemical shift of the Sn-C bond in Sn $3d_{5/2}$ spectra was about +1.7 eV. The electrical resistivity and the optical transmittance were also investigated.

• Bulletin of the Korean Chemical Society
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• 제17권11호
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• pp.1023-1031
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• 1996

A new synthetic route for the lanthanum β-diketonate compounds via in-situ formed lanthanum alkyl complexes was developed in the process for the development of suitable MOCVD (metal-organic chemical vapor deposition) precursors of PLT, one of the promising material for the ferroelectric film. A series of lanthanum β-diketonate compounds were successfully synthesized by this method. This new method is found to have some merits; versatile method for almost every β-diketone, β-hydroxyketone, and β-hydroxyaldehyde, short reaction time, easy purification for high purity, moderate to high yield, and easy access to anhydrous compounds. In some cases, anhydrous oligomeric products fail to show the higher volatility. On the other hand, some lanthanum β-diketonates with aromatic groups such as La(1,3-biphenyl-l,3-propandione)3 are found to have favorable properties for a precursor of lanthanum oxide, one of major components of PLT, such as low melting point, and much higher decomposition temperature. A plausible pyrolysis mechanism is proposed by the TGA, where consecutive dissociation of R, CO, CH, C, and O fragments occurs.

• 한국재료학회지
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• 제19권2호
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• pp.85-89
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• 2009

Nano-crystalline hydroxyapatite (HAp) films were formed at the Ti surface by a single-step microarc oxidation (MAO), and HAp-zirconia composite (HZC) films were obtained by subsequent chemical vapor deposition (CVD) of zirconia onto the HAp. Through the CVD process, zero- and one-dimensional zirconia nanostructures having tetragonal crystallinity (t-ZrO2) were uniformly distributed and well incorporated into the HAp crystal matrix to form nanoscale composites. In particular, (t-$ZrO_2$) was synthesized at a very low temperature. The HZC films did not show secondary phases such as tricalcium phosphate (TCP) and tetracalcium phosphate (TTCP) at relatively high temperatures. The most likely mechanism for the formation of the t-$ZrO_2$ and the pure HAp at the low processing temperature was proposed to be the diffusion of $Ca^{2+}$ ions. The HZC films showed increasing micro-Vickers hardness values with increases in the t-$ZrO_2$ content. The morphological features and phase compositions of the HZC films showed strong dependence on the time and temperature of the CVD process. Furthermore, they showed enhanced cell proliferation compared to the $TiO_2$ and HAp films most likely due to the surface structure change.

• 한국결정성장학회지
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• 제7권2호
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• pp.197-206
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• 1997

6H-SiC 위에 SiC 에피층이 화학 기상 증착(CVD)에 의하여 성장되었다. 성장된 SiC 에피층의 결정구조는 X-선 회절과 Raman 분광을 사용하여 조사되었으며, 이 에피층은 6H-SiC로서 성장되었음을 확인하였다. 수정된 Lely법으로 성장된 한 SiC 결정 분말의 결정구조를 확인하기 위하여 전형적인 SiC polytype들의 X-선 회절상을 계산하였으며, 측정된 X-선 회절상과 비교하여 이 SiC 결정에는 15R-SiC가 약간 혼재되어 있음을 확인하였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.271-284
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• 1999

As a semiconductor material for electronic devices operated under extreme environmental conditions, silicon carbides (SiCs) have been intensively studied because of their excellent electrical, thermal and other physical properties. The growth characteristics of single-crystalline 4H-SiC homoepitaxial layers grown by a thermal chemical vapor deposition (CVD) were investigated. Especially, the successful growth condition of 4H-SiC homoepitaxial layers using a SiC-uncoated graphite susceptor that utilized Mo-plates was obtained. The CVD growth was performed in an RF-induction heated atmospheric pressure chamber and carried out using off-oriented substrates prepared by a modified Lely method. In order to investigate the crystallinity of grown epilayers, Nomarski optical microscopy, Raman spectroscopy, photoluminescence(PL), scanning electron microscopy (SEM) and other techniques were utilized. The best quality of 4H-SiC homoepitaxial layers was observed in conditions of growth temperature 1500$^{\circ}C$ and C/Si flow ratio 2.0 of C3H3 0.2sccm & SiH4 0.3sccm. The growth rate of epilayers was about 1.0$\mu\textrm{m}$/h in the above growth condition.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.883-888
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.15-19
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• 1998

Defects formation of Chemical Vapor Deposition (CVD) diamond on $^4He^{2+}$ irradiation and after remote hydrogen plasma treatment(RHPT) were investigated by cathodoluminescence(CL). As calculated in the TRIM simulation, the light elements of $^4He^{2-}$ can be penetrated into the diamond bulk structure at 3~4 $\mu\textrm{m}$ depth. The effects of the implantation region were observed when 5 keV~20 keV electron energy (insight 0.3~4.0$\mu\textrm{m}$) of CL measurement was irradiated to diamond at temperature 80 K. After the RHPT, rehybridization of irradiation damaged diamond was studied. The intensity of 5RL center(intrinsic defect of C) was diminished. The 2.16 eV center (N-V center) occurring usually by annealing could not be seen after RHPT. The diamond was rehybridized by hydrogen radicals without etching and thermal degradation by the RHPT.

• 한국태양에너지학회 논문집
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• 제21권1호
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• pp.1-10
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• 2001

Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the temperature$(T_w)$. The films deposited at high $T_w$ of $2000^{\circ}C$ have superior crystalline proper average lateral grain sizes are larger than $1{\mu}m$ and there are no vertical grain boundaries. The sur of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and text surface are believed to give high current density when applied to solar cells. However, the poly films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.

• 한국표면공학회지
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• 제52권6호
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• pp.310-315
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• 2019

The use of a silicon carbide (SiC)-based composite ceramic layer for the mold of a curved cover glass was demonstrated. The stress of SiC/VDR/graphite-based mold structure was evaluated via finite element analysis. The results revealed that the maximum tensile stress primarly occured at the edge region. Moreover, the stress can be reduced by employing a relatively thick SiC coating layer and, therefore, layers of various thicknesses were deposited by means of chemical vapor deposition. During growth of the layer, the orientation of the facets comprising the SiC grain became dominant with additional intense SiC(220) and SiC(004). However, the roughness of the SiC layer increased with increasing thickness of the layer and. Hence, the thickness of the SiC layer needs to be adjusted by values lower than the tolerance band of the curved cover glass mold.