• 한국세라믹학회지
• /
• 제26권2호
• /
• pp.235-241
• /
• 1989

A study on the APCVD(atmospheric pressure chemical vapor deposition) Al2O3 was done by using the aluminum-tri-isopropoxide/N2 reaction system at 40$0^{\circ}C$. When the flow rate of the carrier gas(N2) was over 2SLPM, heterogeneous reaction was observed. However, when the flow rate of the carrier gas was below 2SLPM, a porously deposited film or powder formation was observed. The film formed by a heterogeneous reaction was optically dense. The dense film is thought to be a kind of a hydrated alumina. After a thermal treatment of the film in the range of temperature from $600^{\circ}C$ to 1, 20$0^{\circ}C$, properties of the film seems to be changed due to dehydration and densification process. In the case of the powder on heat treatment(600~1, 20$0^{\circ}C$), both a phase transformation and the change of OH peak was observed.

• 한국안광학회지
• /
• 제1권1호
• /
• pp.23-28
• /
• 1996

실온에서 60Hz 저주파 플라즈마 CVD로 수소화된 비정질 탄소(a-C:H) 박막을 제조하였다. 이 방법으로 형성된 박막은 상용 주파수인 전원을 사용하기 때문에 종래의 다른 방법에 비하여 실험이 간단하고 저렴하게 제작되며, 적은 전력밀도(0.03~0.08 W/cm2를 사용하므로 시료의 손상이 작은 장정들을 가지고 있다. 본 연구에서 제작한 a-C:H 박막은 높은 투명도(95%), 높은 저항성(109~1011${\Omega}$-cm). 그리고 순도가 좋은 탄소를 유지하며 평탄성이 아주 좋다. 시료들은 기압비율이 1%에서 30%까지의 범위에서 메탄 (CH4)과 수소(H2)의 혼합기체의 분해에 의하여 제작되었다. 제작된 시료의 침전율 (deposition rate), 광학적 갭(optical gap), 그리고 수소 함량등은 메탄 함량의 증가에 따라 증가하였다. 반응시 플라즈마 온도(~ 6eV)와 밀도(107 cm-3)는 에탄함량에 거의 의존하지 않았다.

• 한국표면공학회지
• /
• 제46권1호
• /
• pp.29-35
• /
• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2003년도 하계학술대회 논문집 C
• /
• pp.1574-1576
• /
• 2003

Carbon nanotubes (CNTs) were grown on the TiN-coated silicon substrate with different thickness of Ni and Co catalysts layer at $600^{\circ}C$ using inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Co catalysts were formed using the RF magnetron sputtering system with various deposition times. It was found that the growth of CNTs was strongly influenced by the surface morphology of Ni and Co catalysts. With increasing deposition time, the thickness of catalysts increased and the grain boundary size of catalysts increased. The surface morphology of catalysts and CNTs were elucidated by SEM. The Raman spectrum further confirmed the graphitic structure of the CNTs. The turn-on field of CNTs grown on Ni and Co catalysts was about 2.7V/pm and 1.9V/pm respectively. Field emission current density of CNTs grown on Ni and Co catalysts was measured as $11.67mA/cm^2$ at $5.5V/{\mu}m$ and $1.5mA/cm^2$ at $5.5V/{\mu}m$ respectively.

• 한국재료학회지
• /
• 제21권12호
• /
• pp.666-672
• /
• 2011

The a-Si:H/c-Si hetero-junction (HJ) solar cells have a variety of advantages in efficiency and fabrication processes. It has already demonstrated about 23% in R&D scale and more than 20% in commercial production. In order to further reduce the fabrication cost of HJ solar cells, fabrication processes should be simplified more than conventional methods which accompany separate processes of front and rear sides of the cells. In this study, we propose a simultaneous deposition of intrinsic thin a-Si:H layers on both sides of a wafer by dual hot wire CVD (HWVCD). In this system, wafers are located between tantalum wires, and a-Si:H layers are simultaneously deposited on both sides of the wafer. By using this scheme, we can reduce the process steps and time and improve the efficiency of HJ solar cells by removing surface contamination of the wafers. We achieved about 16% efficiency in HJ solar cells incorporating intrinsic a-Si:H buffers by dual HWCVD and p/n layers by PECVD.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.421.1-421.1
• /
• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• 한국세라믹학회지
• /
• 제24권6호
• /
• pp.543-552
• /
• 1987

The effects of deposition variables on SnO2 CVD were investigated for SnCl4＋O2 reaction at 300∼700$^{\circ}C$, Psncl4=1${\times}$10-5∼1${\times}$10-3 atm, and Po2=5${\times}$10-4∼1 atm. A thermodynamic equilibrium study on Sn-Cl-O system has been performed with the computer calculation. The calculation indicates that major species participating the reaction in SnCl4 and not intermediate species, SnCl2. Good uniformity of the film thickness was obtained at the flow rate of 11cm/sec, which resulted from the stable gas flow in our cold wall reactor. The experimental results showed that apparent activation energy of the deposition was about 13.5Kcal/mole below the temperature of 500$^{\circ}C$ and the deposition mechanism was controlled by surface reation. The behavior of deposition rate on the reactant partial pressures could be explained with the Langmuri-Hinshelwood mechanism. X-ray study demonstrated that SnO2 film deposited at temperatures above 400$^{\circ}C$ were polycrystalline with tetragonal rutile structure and grew with (211) and (301) preferred orientations.

• 한국표면공학회지
• /
• 제26권1호
• /
• pp.3-9
• /
• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• 한국재료학회지
• /
• 제11권6호
• /
• pp.512-518
• /
• 2001

6.5wt%Si강판을 낮은 철손실, 고투자율 그리고 자왜가 거의 0으로 우수한 자성재료로 잘 알려져 있다. 본 실험에서는 화학기상증착 (Chemical Vapor Deposition)으로 6.5wt%Si 강판을 만들었다 이 과정은 튜브 노내에서 실리콘의 함량이 낮은 Si강판에 SiCl$_4$가스를 반응시킨다. 이때 SiCl$_4$가스에서 분해된 Si의 원자들은 모재인 강판 표면에 증착되어 표면층에 Si가 풍부한 층을 형성한다. 마지막으로 고온에서 확산과정을 통하여 모재 내부로부터 실리콘의 함량이 균일한 강판을 얻을 수 있다. 0.5mm두께를 갖은 6.5wt%Si 강판의 철손실은 고주파수에서 약 8.92W/kg를 나타냈으며 투자율은 53,300으로 일반 실리콘강판, 즉 2.5wt%Si강판의 투자율 37,100보다 약 두배 가량 증가하였다. 또한 기계적인 특성을 평가하기 위해서 일반 0.5wt%Si강판과 773K의 온도에서 수시간 열처리한 강판을 인장실험 하였다. 따라서 수 시간 열처리한 시편에서 연신율이 증가함을 알 수 있었으며 파단면을 관찰한 결과 입 계파단면이 현저히 감소했음을 알았다

• 한국입자에어로졸학회지
• /
• 제6권3호
• /
• pp.139-145
• /
• 2010

In this study, we investigated the particle formation during the deposition of borophosphosilicate glass (BPSG) and phosphosilicate glass (PSG) films in thermal chemical vapor deposition reactor using in-situ particle monitor (ISPM) and particle beam mass spectrometer (PBMS) which installed in the reactor exhaust line. The particle current and number count are monitored at set-up, stabilize, deposition, purge and pumping process step in real-time. The particle number distribution at stabilize step was measured using PBMS and compared with SEM image data. The PBMS and SEM analysis data shows the 110 nm and 80 nm of mode diameter for BPSG and PSG process, respectively.