Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Fabrication of a-Si:H/c-Si Hetero-Junction Solar Cells by Dual Hot Wire Chemical Vapor Deposition

양면동시증착 열선-CVD를 이용한 a-Si:H/c-Si 이종접합 태양전지 제조

  • Jeong, Dae-Young (KIER-UNIST Advanced Center for Energy, Korea Institute of Energy Research) ;
  • Song, Jun-Yong (KIER-UNIST Advanced Center for Energy, Korea Institute of Energy Research) ;
  • Kim, Kyung-Min (KIER-UNIST Advanced Center for Energy, Korea Institute of Energy Research) ;
  • Lee, Hi-Deok (Department of Electronic, Chungnam National University) ;
  • Song, Jin-Soo (KIER-UNIST Advanced Center for Energy, Korea Institute of Energy Research) ;
  • Lee, Jeong-Chul (KIER-UNIST Advanced Center for Energy, Korea Institute of Energy Research)
  • 정대영 (한국에너지기술연구원 차세대전지원천기술센터) ;
  • 송준용 (한국에너지기술연구원 차세대전지원천기술센터) ;
  • 김경민 (한국에너지기술연구원 차세대전지원천기술센터) ;
  • 이희덕 (충남대학교 전자전파정보통신과) ;
  • 송진수 (한국에너지기술연구원 차세대전지원천기술센터) ;
  • 이정철 (한국에너지기술연구원 차세대전지원천기술센터)
  • Received : 2011.10.30
  • Accepted : 2011.11.10
  • Published : 2011.12.27
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Abstract

The a-Si:H/c-Si hetero-junction (HJ) solar cells have a variety of advantages in efficiency and fabrication processes. It has already demonstrated about 23% in R&D scale and more than 20% in commercial production. In order to further reduce the fabrication cost of HJ solar cells, fabrication processes should be simplified more than conventional methods which accompany separate processes of front and rear sides of the cells. In this study, we propose a simultaneous deposition of intrinsic thin a-Si:H layers on both sides of a wafer by dual hot wire CVD (HWVCD). In this system, wafers are located between tantalum wires, and a-Si:H layers are simultaneously deposited on both sides of the wafer. By using this scheme, we can reduce the process steps and time and improve the efficiency of HJ solar cells by removing surface contamination of the wafers. We achieved about 16% efficiency in HJ solar cells incorporating intrinsic a-Si:H buffers by dual HWCVD and p/n layers by PECVD.

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References

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