• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.239-239
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• 2004

화학적 기계연마 공정(CMP)은 반도체 웨이퍼를 수 천$\AA$m/min의 MRR로 2$\mu\textrm{m}$ 이내의 W(Total Thickness Variable) 조건을 만족시키는 초정밀 광역 평탄화 기술이다. 일반적인 CMP 방법은 서로 다른 회전 중심을 갖고 동일한 방향으로 회전하는 웨이퍼와 다공성 패드 사이에 연마액인 슬러리를 넣어 연마하는 것이다. CMP 공정기술은 1990년 대 중반에 개발되었으나, 아직까지 연마 메커니즘이 완벽하게 밝혀지지 않았다. 따라서 장비를 최적화하기 위해 실험에 의존적일 수밖에 없으나, 이러한 방법은 막대한 자금과 노력뿐만 아니라 상당한 시간을 필요로 하기 때문에, 앞으로 가속될 연마대상 재료의 변화 및 다양한 속도에 발맞출 수 없다.(중략)

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.93-98
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• 2008

We investigated the effect of process temperature on removal rate and non-uniformity based on single head kinematics in oxide CMP. Generally, it has been known that the temperature profile directly transfers to the non~uniformity of removal rate on the wafer, which has similar tendency with the sliding distance of wafer. Experimental results show that platen velocity is a dominant factor in removal rate as well as average temperature. However, the non-uniformity does not coincide between process temperature and removal rate, due to slurry accumulation and low deviation of temperature. Resultantly, the removal rate is strongly dependent on the rotational speed of platen, and its non -uniformity is controlled by the rotational speed of polishing head. It means lower WIWNU (With-in-wafer-non-uniformity) can be achieved in the region of higher head speed.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.122-123
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• 2002

Cu CMP process control for global planarization of semiconductor surface were studied on a platen polisher by using an experimental copper slurry containing ceria as the abrasive component. In order to understand the process. a design of experiment was conducted. From the experiment. the effects of polishing parameters such as polishing pressure, platen speed, and speed of wafer carrier on the removal rate of copper and the uniformity in copper removal were calculated and discussed. In this study, process parameters of Cu CMP and WIWNU(Within Wafer Non Uniformity) were presented.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.4 s.235
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• pp.435-440
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• 2005

In this paper, slurry fluid motion, abrasive particle motion, and roles of groove patterns on the pads are numerically investigated in the 2D and 3D geometries. The simulation results are analyzed in terms of experimental removal rate and WIWNU (Within Wafer Non-Uniformity) for ILD (Inter Level Dielectric) CMP process. Numerical investigations reveal that the grooves in the pad behave as uniform distributor of abrasive particles and enhance the removal rate by increasing shear stress. Higher removal rate and desirable uniformity are numerically and experimentally observed at the pad with grooves. Numerical analysis is very well matched with experimental results and helpful fur understanding polishing mechanism and local physics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1292-1295
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• 2004

본 연구는 Cu CMP공정 중 알루미나 연마입자의 wafer 표면에서의 점착과 오염을 AFM (Atomic Force Microscopy)을 사용하여 슬러리내에서 점착력 측정과 실제 연마 후 wafer 표면의 오염을 실험적으로 비교 평가하였다. 연마입자의 adhesionn force 측정에 있어서도 역시 wafer들의 zetapotential 결과와 잘 일치하였으며, 모든 wafer 종류에 관계없이, 산성 영역에서 염기성영역의 슬러리가 적용됨에 따라 adhesion force가 작아짐을 확인할 수 있었다. 특히 FSG wafer의 zetapotential 결과는 비록 산성 분위기에서는 양성 전하값을 나타내었으나, 염기성 분위기의 pH에서는 급격하게 음성 전하값을 나타내었고, 이는 adhesionn force결과와 FESEM 결과와 잘 일치하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.50-50
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• 2005

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.83.1-83
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• 2003

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.5-10
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• 2007

Using a reference slurry, ammonium dodecyl sulfate (ADS), an anionic and environmentally friendly surfactant, was investigated as an alternative to BTA for its inhibition and lubrication characteristics. Results demonstrated that the inhibition efficiency of ADS was superior to that of BTA. Coefficient of friction (COF) was the lowest when the slurry contained ADS. This suggested that adsorbed ADS on the surface provided lubricating action thereby reducing the wear between the contacting surfaces. Temperature results were consistent with the COF and removal rate data. ADS showed the lowest temperature rise again confirming the softening effect of the adsorbed surfactant layer and less energy dissipation due to friction. Spectral analysis of shear force showed that increasing the pad-wafer sliding velocity at constant wafer pressure shifted the high frequency spectral peaks to lower frequencies while increasing the variance of the frictional force. Addition of ADS reduced the fluctuating component of the shear force and the extent of the pre-existing stick-slip phenomena caused by the kinematics of the process and collision event between pad asperities with the wafer. By contrast, in the case of BTA, there were no such observed benefits but instead undesirable effects were seen at some polishing conditions. This work underscored the importance of real-time force spectroscopy in elucidating the adsorption, lubrication and inhibition of additives in slurries in CMP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.313-320
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• 2005

Stick-slip friction is one of the material removal mechanisms in tribology. It occurs when the static friction force is larger than the dynamic friction force, and make the friction curve fluctuated. In the friction monitoring of chemical mechanical polishing(CMP), the friction force also vibrates just as stick-slip friction. In this paper, an attempt to show the similarity between stick-slip friction and the friction of CMP was conducted. The prepared hard pa(IC1000/Suba400 stacked/sup TM/) and soft pad(Suba400/sup TM/) were tested with SiO₂ slurry. The friction force was measured by piezoelectric sensor. According to this experiment, it was shown that as the head and table velocity became faster, the stick-slip time shortened because of the change of real contact area. And, the gradient of stick-slip period as a function of head and table speed in soft pad was more precipitous than that of hard one. From these results, it seems that the fluctuating friction force in CMP is stick-slip friction caused by viscoelastic behavior of the pad and the change of real contact area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.727-730
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• 2004

In this paper, so as to investigate the influence of oxidizer for each metal film using the alumina-based slurry, we have peformed the W/Ti metal-CMP process by adding $H_2O_2$ as a representative oxidizer from 1 wt% to 9 wt%, respectively. As an experimental result, for the case of 5 wt% oxidizer added, the removal rates were improved and polishing selectivity of 1.4 : 1 was obtained. Also, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. Finally, atomic force microscope (AFM) measurements were carried out for the analysis of surface morphology and root mean square (RMS) roughness after CMP Process.