Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Metal CMP Characteristics by Oxidizer Modification

Oxidizer modify에 의한 Metal CMP 특성

  • 박성우 (대불대학교 전기전자공학과) ;
  • 김철복 (동성A&T주식회사) ;
  • 김상용 ((주)동부 아남 반도체) ;
  • 이우선 (조선대학교 전기공학과) ;
  • 장의구 (중앙대학교 전자전기공학부) ;
  • 서용진 (대불대학교 전기전자공학과)
  • Published : 2004.11.11
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Abstract

In this paper, so as to investigate the influence of oxidizer for each metal film using the alumina-based slurry, we have peformed the W/Ti metal-CMP process by adding $H_2O_2$ as a representative oxidizer from 1 wt% to 9 wt%, respectively. As an experimental result, for the case of 5 wt% oxidizer added, the removal rates were improved and polishing selectivity of 1.4 : 1 was obtained. Also, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. Finally, atomic force microscope (AFM) measurements were carried out for the analysis of surface morphology and root mean square (RMS) roughness after CMP Process.

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