• The Journal of Korean Institute of Communications and Information Sciences
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• v.36 no.3C
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• pp.175-182
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• 2011

This paper presents a novel eight-parallel 128/256-point mixed-radix multi-path delay commutator (MRMDC) FFT/IFFT processor for orthogonal frequency-division multiplexing (OFDM) systems. The proposed FFT architecture can provide a high throughput rate and low hardware complexity by using an eight-parallel data-path scheme, a modified mixed-radix multi-path delay commutator structure and an efficient scheduling scheme of complex multiplications. The efficient scheduling scheme can reduce the number of complex multipliers at the second stage from 88 to 40. The proposed FFT/IFFT processor has been designed and implemented with the 90nm CMOS technology. The proposed eight-parallel FFT/IFFT processor can provide a throughput rate of up to 27.5Gsample/s at 430MHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.162-162
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• 2012

Sub 100 nm의 Complementary Metal-Oxide-Semiconductor (CMOS) 소자를 구동하기 위해서는 2.0 nm 이하의 $SiO_2$ oxide에 해당하는 전기적 특성이 요구된다. 그러나 2.0 nm 이하의 $SiO_2$에서는 누설 전류가 너무 크기 때문에 이를 대체하기 위해서 유전 상수 (dielectric permittivity)가 높은 $HfO_2$ (${\varepsilon}=25$), $Al_2O_3$, $HfO_2/Al_2O_3$ laminate 등의 high-k dielectric 물질들이 연구되고 있다[1]. High-k dielectric 물질의 전기적 특성은 박막 조성, 두께 및 전극과의 계면에 생성되는 계면 층이나 불순물(Impurity) 거동에 크게 의존하므로 High-k dielectric/전극(Metal or Si) 구조에서 조성 및 불순물의 거동에 대한 정확한 평가가 주요 쟁점으로 부각되고 있다. 이를 평가하기 위해 일반적으로 $Ar^+$ ion에 의한 depth profiling 분석이 진행되나 Oxygen 원자의 선택적 식각에 기인된 분석 깊이 분해능(Depth Resolution) 왜곡으로 계면 층의 형성이나 불순물의 거동을 정확하게 평가할 수 없다. 이러한 예로는 $Ta_2O_5$ 및 $SrBi_2Ta_2O_9$와 같은 다 성분 계 산화막에 $Ar^+$ ion 주사 시 발생하는 선택적인 식각(Preferential Sputtering) 때문에 박막의 실제 조성 및 거동을 평가하는 것은 어렵다고 보고된 바 있다[2,3]. 본 연구에서는 $90{\AA}$인 적층 $Hf_xO_y/Al_xO_y/Hf_xO_y$ 구조에서의 불순물 거동 분석 능력 확보 상 주요 인자인 깊이 분해능 개선을 Secondary Ion Mass Spectroscopy(SIMS)의 primary ion 종, impact energy 및 주사 각도를 변화시켜 ~1 nm 수준까지 구현하였다. 이러한 분석 깊이 분해능의 개선은 Low Impact Energy, 입사 이온의 glancing angle 및 Cluster ion 적용에 의존하며 이들 요인의 효과에 대해 비교/고찰하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.35-38
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• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.

• ETRI Journal
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• v.37 no.6
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• pp.1143-1153
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• 2015

In this paper, we propose an efficient architecture for a real-time image stitching engine for vision SoCs found in motor vehicles. To enlarge the obstacle-detection distance and area for safety, we adopt panoramic images from multiple telegraphic cameras. We propose a stitching method based on a fixed homography that is educed from the initial frame of a video sequence and is used to warp all input images without regeneration. Because the fixed homography is generated only once at the initial state, we can calculate it using SW to reduce HW costs. The proposed warping HW engine is based on a linear transform of the pixel positions of warped images and can reduce the computational complexity by 90% or more as compared to a conventional method. A dual-core SW/HW image stitching engine is applied to stitching input frames in parallel to improve the performance by 70% or more as compared to a single-core engine operation. In addition, a dual-core structure is used to detect a failure in state machines using rock-step logic to satisfy the ISO26262 standard. The dual-core SW/HW image stitching engine is fabricated in SoC with 254,968 gate counts using Global Foundry's 65 nm CMOS process. The single-core engine can make panoramic images from three YCbCr 4:2:0 formatted VGA images at 44 frames per second and frequency of 200 MHz without an LCD display.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.77-83
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• 2004

In low-power VLSI systems, it is effective to suppress leakage current by shutting down megablocks in idle states. Recently, multi-threshold voltage CMOS (MTCMOS) is widely accepted to shutdown power supply. However, it requires short wake-up time as operating frequency increases. This causes large current surge during wake-up process, and it often leads to system malfunction due to severe Power line noise. In this paper, a novel wake-up scheme is proposed to solve this problem. It exploits pipelined wake-up strategy in several stages that reduces maximum current on the power line and its corresponding power line noise. To evaluate its efficiency, the proposed scheme was applied to a multiplier block in the Compact Flash memory controller chip. Power line noise in shutdown and wake-up process was simulated and analyzed. From the simulation results, the proposed scheme was proven to greatly reduce the power line noise compared with conventional schemes.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.503-506
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• 2015

In accordance with IoT(Internet of Things) commercialization, the need to design SoC-based hardware platform with wireless communication is increasing. This paper therefor proposes an SoC platform architecture with Smart Frame System inter-communicating between devices. Wireless communication functions and high-performance real-time image processing hardware structure was applied to existing digital photo frame. We developed a smart phone application to control the smart frame through Bluetooth communication. The SoC platform hardware consists of CIS controller, Memory controller, ISP(Image Signal Processing) module for image scaling, Bluetooth Interface for inter-communicating between devices, VGA/TFT-LCD controller for displaying video. The Smart Frame System to support the IoT services was implemented and verified using HBE-SoC-IPD test board equipped with Virtex4 XC4VLX80 FPGA. The operating frequency is 54MHz.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1005-1008
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• 2007

In this study, an architecture for 262K-color TFT-LCD source driver. In this paper proposed the chip consumes smaller area and static current which is suitable for QVGA resolutions. In the conventional structures, all of them need large number of OPAMP buffers to drive the pixels, Therefore, highly resistive R-DACs are needed to generate gamma voltages to reduce the static current. In this study, our design only used two OPAMPs and low resistance RDACs without increasing the quiescent current. Thus, it was experted that chip would be more in consuming lower static power for longer battery lifetime. The source driver were implemented by the 3.3 V $0.35\;{\mu}m$ CMOS technology provided by TSMC. The area of the core OPAMP circuit was about $110\;{\mu}m\;{\times}\;150\;{\mu}m$ and that of the source driver was $880\;{\mu}m\;{\times}\;430\;{\mu}m$. As compared to the conventional structure, approximately 64.48 % in area was achieved.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.4
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• pp.721-728
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• 2018

This paper introduces various linear block error correction code and compares performances of the correction circuits. As the risk of errors due to power noise has increased, ECC(: Error Correction Code) has been introduced to prevent the bit error. There are two representatives of ECC structures which are SEC-DED(: Single Error Correction Double Error Detection) and SEC-DED-DAEC(: Double Adjacent Error Correction). According to simulation results, the SEC-DED circuit has advantages of small area and short delay time compared to SEC-DED-DAEC circuits. In case of SED-DED-DAEC, there is no big difference between Dutta's and Pedro's from performance point of view. Therefore, Pedro's code is more efficient than Dutta' code since the correction rate of Pedro's code is higher than that of Dutta's code.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2013.10a
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• pp.763-764
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• 2013

A three-dimensional image capturing device and its signal processing algorithm and apparatus are presented. Three dimensional information is one of emerging differentiators that provides consumers with more realistic and immersive experiences in user interface, game, 3D-virtual reality, and 3D display. It has the depth information of a scene together with conventional color image so that full-information of real life that human eyes experience can be captured, recorded and reproduced. 20 Mega-Hertz-switching high speed image shutter device for 3D image capturing and its application to system prototype are presented[1,2]. For 3D image capturing, the system utilizes Time-of-Flight (TOF) principle by means of 20MHz high-speed micro-optical image modulator, so called 'optical resonator'. The high speed image modulation is obtained using the electro-optic operation of the multi-layer stacked structure having diffractive mirrors and optical resonance cavity which maximizes the magnitude of optical modulation[3,4]. The optical resonator is specially designed and fabricated realizing low resistance-capacitance cell structures having small RC-time constant. The optical shutter is positioned in front of a standard high resolution CMOS image sensor and modulates the IR image reflected from the object to capture a depth image (Figure 1). Suggested novel optical resonator enables capturing of a full HD depth image with depth accuracy of mm-scale, which is the largest depth image resolution among the-state-of-the-arts, which have been limited up to VGA. The 3D camera prototype realizes color/depth concurrent sensing optical architecture to capture 14Mp color and full HD depth images, simultaneously (Figure 2,3). The resulting high definition color/depth image and its capturing device have crucial impact on 3D business eco-system in IT industry especially as 3D image sensing means in the fields of 3D camera, gesture recognition, user interface, and 3D display. This paper presents MEMS-based optical resonator design, fabrication, 3D camera system prototype and signal processing algorithms.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.7 no.10
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• pp.895-903
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• 2017

Quantum Cellular Automata(QCA) is one of the proposed techniques as an alternative solution to the fundamental limitations of CMOS. QCA has recently been extensively studied along with experimental results, and is attracting attention as a nano-scale size and low power consumption. Although the XOR gates proposed in the previous paper can be designed using the minimum area and the number of cells, there is a disadvantage that the number of added cells is increased due to the stability and the accuracy of the result. In this paper, we propose a gate that supplement for the drawbacks of existing XOR gates. The XOR gate of this paper reduces the number of cells by arranging AND gate and OR gate with square structure and propose a half-adder by adding two cells that serve as simple inverters using the proposed XOR gate. Also This paper use QCADesginer for input and result accuracy. Therefore, the proposed half-adder is composed of fewer cells and total area compared to the conventional half-adder, which is effective when used in a large circuit or when a half - adder is needed in a small area.