• Title/Summary/Keyword: CMOS logic circuit

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Full CMOS Single Supply PLC SoC ASIC with Integrated Analog Front-End

  • Nam, Chul;Pu, Young-Gun;Kim, Sang-Woo;Lee, Kang-Yoon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.2
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    • pp.85-90
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    • 2009
  • This paper presents a single supply PLC SoC ASIC with a built-in analog Front-end circuit. To achieve the low power consumption along with low cost, this PLC SoC employs fully CMOS Analog Front End (AFE) and several LDO regulators (LDOs) to provide the internal power for Logic Core, DAC and Input/output Pad driver. The receiver part of the AFE consists of Pre-amplifier, Gain Amplifier and 1 bit Comparator. The transmitter part of the AFE consists of 10 bit Digital Analog Converter and Line Driver. This SoC is implemented with 0.18 ${\mu}m$ 1 Poly 5 Metal CMOS Process. The single supply voltage is 3.3 V and the internal powers are provided using LDOs. The total power consumption is below 30 mA at stand-by mode to meet the Eco-Design requirement. The die size is 3.2 $\times$ 2.8 $mm^{2}$.

A 45GHz $f_{T}\;and\;50GHz\;f_{max}$ SiGe BiCMOS Technology Development for Wireless Communication ICs (무선통신소자제작을 위한 45GHz $f_{T}$ 및 50GHZz $f_{max}$ SiGe BiCMOS 개발)

  • Hwang Seok-Hee;Cho Dae-Hyung;Park Kang-Wook;Yi Sang-Don;Kim Nam-Ju
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.9 s.339
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    • pp.1-8
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    • 2005
  • A $0.35\mu$m SiGe BiCMOS fabrication process has been timely developed, which is aiming at wireless RF ICs development and fast growing SiGe RF market. With non-selective SiGe epilayer, SiGe HBTs in this process used trapezoidal Ge base profile for the enhanced AC performance via Ge induced bandgap niuoin. The characteristics of hFE 100, $f_{T}\;45GHz,\;F_{max}\;50GHz,\;NF_{min}\;0.8dB$ have been obtained by optimizing not only SiGe base profile but also RTA condition after emitter polysilicon deposition, which enables the SiGe technology competition against the worldwide cutting edge SiGe BiCMOS technology. In addition, the process incorporates the CMOS logic, which is fully compatible with $0.35\mu$m pure logic technology. High Q passive elements are also provided for high precision analog circuit designs, and their quality factors of W(1pF) and inductor(2nH) are 80, 12.5, respectively.

Spread Spectrum Clock Generator with Multi Modulation Rate Using DLL (Delay Locked Loop) (DLL을 이용한 다중 변조 비율 확산대역클록 발생기)

  • Shin, Dae-Jung;Yu, Byeong-Jae;Kim, Tae-Jin;Cho, Hyun-Mook
    • Journal of IKEEE
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    • v.15 no.1
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    • pp.23-28
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    • 2011
  • This paper describes design and implementation of a spread spectrum clock generator(SSCG). The proposed architecture generates the spread spectrum clock controlling a input voltage signal for VCDL(Voltage Controlled Delay Line). Spread charge pump is controlled by the SSC modulation logic block provides a control signal to VCDL through LPF in DLL. By using this architecture, chip area and power consumption can be reduced because it is not necessary additional circuit to control modulation rate. This circuit has been designed and fabricated using the UMC 0.25um CMOS technology. The chip occupies an area of 290${\times}$120um^2.

Design of a Low-Power Parallel Multiplier Using Low-Swing Technique (저 전압 스윙 기술을 이용한 저 전력 병렬 곱셈기 설계)

  • Kim, Jeong-Beom
    • The KIPS Transactions:PartA
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    • v.14A no.3 s.107
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    • pp.147-150
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    • 2007
  • This paper describes a new low-swing inverter for low power consumption. To reduce a power consumption, an output voltage swing is in the range from 0 to VDD-2VTH. This can be done by the inverter structure that allow a full swing or a swing on its input terminal without leakage current. Using this low-swing voltage technology, we proposed a low-power 16$\times$16 bit parallel multiplier. The proposed circuits are designed with Samsung 0.35$\mu$m standard CMOS process at a 3.3V supply voltage. The validity and effectiveness are verified through the HSPICE simulation.. Compared to the previous works, this circuit can reduce the power consumption rate of 17.3% and the power-delay product of 16.5%.

The ASIC Design of the Adaptive De-interlacing Algorithm with Improved Horizontal and Vertical Edges (수평 및 수직 윤곽선을 개선한 ADI(Adaptive De-interlacing) 보간 알고리즘의 ASIC 설계)

  • 한병혁;박노경;배준석;박상봉
    • Proceedings of the IEEK Conference
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    • 2000.11d
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    • pp.139-142
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    • 2000
  • In this paper, the ADI (Adaptive De-interlacing) algorithm is proposed, which improves visually and subjectively horizontal and vertical edges of the image processed by the ELA(Edge Line-based Average) method. This paper also proposes a VLSI architecture for the proposed algorithm and designed the architecture through the full custom CMOS layout process. The proposed algorithm is verified using C and Matlab and implemented using 0.6$\mu\textrm{m}$ 2-poly 3-metal CMOS standard libraries. For the circuit and logic simulation, Cadence tool is used.

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A Fault Simulator for IDDQ Testing (IDDQ 테스트를 위한 고장 시뮬레이터)

  • 배성환;김대익;이창기;전병실
    • The Journal of the Acoustical Society of Korea
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    • v.18 no.1
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    • pp.92-96
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    • 1999
  • As CMOS technologies have been rapidly developed, bridging faults have been relatively increased. IDDQ testing is a current testing methodology which can enhance reliability of the circuit since it efficiently detects bridging faults that are difficult to detect by functional testing. In this paper we consider internal bridging faults occurred in each gate of logic circuits under test and finally develop a fault simulator for IDDQ testing to detect assumed bridging faults.

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Design and Implementation of Low power ALU based on NCL (Null Convention Logic) (NCL 기반의 저전력 ALU 회로 설계 및 구현)

  • Kim, Kyung Ki
    • Journal of Korea Society of Industrial Information Systems
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    • v.18 no.5
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    • pp.59-65
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    • 2013
  • Conventional synchronous design circuits cannot only satisfy the timing requirement of the low voltage digital systems, but also they may generate wrong outputs under the influence of PVT variations and aging effects. Therefore, in this paper, a NCL (Null Convention Logic) design as an asynchronous design method has been proposed, where the NCL method doesn't require any timing analysis, and it has a very simple design methodology. Base on the NCL method, a new low power reliable ALU has been designed and implemented using MagnaChip-SKhynix 0.18um CMOS technology. The experimental results of the proposed NCL ALU have been compared to those of a conventional pipelined ALU in terms of power consumption and speed.

Design of Low Power and High Speed NCL Gates (저전력 고속 NCL 비동기 게이트 설계)

  • Kim, Kyung Ki
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.2
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    • pp.112-118
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    • 2015
  • Conventional synchronous circuits cannot keep the circuit performance, and cannot even guarantee correct operations under the influence of PVT variations and aging effects in the nanometer regime. Therefore, in this paper, a DI (delay insensitive) design based NCL (Null Convention Logic) design methodology with a very simple design structure has been used to design digital systems, which is one of well-known asynchronous design methods robust to various variations and does not require any timing analysis. Because circuit-level structures of conventional NCL gates have weakness of low speed, high area overhead or high wire complexity, this paper proposes a new lNCL gates designed at the transistor level for high-speed, low area overhead, and low wire complexity. The proposed NCL gate libraries have been compared to the conventional NCL gates in terms of circuit delay, area and power consumption using a asynchronous multiplier implemented in dongbu 0.11um CMOS technology.

Mutually-Actuated-Nano-Electromechanical (MA-NEM) Memory Switches for Scalability Improvement

  • Lee, Ho Moon;Choi, Woo Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.2
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    • pp.199-203
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    • 2017
  • Mutually-actuated-nano-electromechanical (MA-NEM) memory switches are proposed for scalability improvement. While conventional NEM memory switches have fixed electrode lines, the proposed MA-NEM memory switches have mutually-actuated cantilever-like electrode lines. Thus, MA-NEM memory switches show smaller deformations of beams in switching. This unique feature of MA-NEM memory switches allows aggressive reduction of the beam length while maintaining nonvolatile property. Also, the scalability of MA-NEM memory switches is confirmed by using finite-element (FE) simulations. MA-NEM memory switches can be promising solutions for reconfigurable logic (RL) circuits.

The Design of A Program Counter Unit for RISC Processors (RISC 프로세서의 프로그램 카운터 부(PCU)의 설계)

  • 홍인식;임인칠
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.7
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    • pp.1015-1024
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    • 1990
  • This paper proposes a program counter unit(PCU) on the pipelined architecture of RISC (Reduced Instruction Set Computer) type high performance processors, PCU is used for supplying instruction addresses to memory units(Instruction Cache) efficiently. A RISC processor's PCU has to compute the instruction address within required intervals continnously. So, using the method of self-generated incrementor, is more efficient than the conventional one's using ALU or private adder. The proposed PCU is designed to have the fast +4(Byte Address) operation incrementor that has no carry propagation delay. Design specifications are taken by analyzing the whole data path operation of target processor's default and exceptional mode instructions. CMOS and wired logic circuit technologic are used in PCU for the fast operation which has small layout area and power dissipation. The schematic capture and logic, timing simulation of proposed PCU are performed on Apollo W/S using Mentor Graphics CAD tooks.

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