• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.8-22
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• 2014

In the past few decades, CMOS logic technologies and devices have been successfully developed with the steady miniaturization of the feature size. At the sub-30-nm CMOS technology nodes, one of the main hurdles for continuously and successfully scaling down CMOS devices is the parametric failure caused by random variations such as line edge roughness (LER), random dopant fluctuation (RDF), and work-function variation (WFV). The characteristics of each random variation source and its effect on advanced device structures such as multigate and ultra-thin-body devices (vs. conventional planar bulk MOSFET) are discussed in detail. Further, suggested are suppression methods for the LER-, RDF-, and WFV-induced threshold voltage (VTH) variations in advanced CMOS logic technologies including the double-patterning and double-etching (2P2E) technique and in advanced device structures including the fully depleted silicon-on-insulator (FD-SOI) MOSFET and FinFET/tri-gate MOSFET at the sub-30-nm nodes. The segmented-channel MOSFET (SegFET) and junctionless transistor (JLT) that can suppress the random variations and the SegFET-/JLT-based static random access memory (SRAM) cell that enhance the read and write margins at a time, though generally with a trade-off between the read and the write margins, are introduced.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.69-72
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• 2003

This paper presents a current-mode multiple-input minimum circuit. The proposed circuit can be implemented by applying De Morgan’s law. The circuit diagram is simple and modular. It operates using a single 2.5V supply and has very low dissipation. The realization method is suitable for fabrication using CMOS technology and all transistors are operated in their saturation region. The performances of this proposed circuit were studied using the PSPICE analog simulation program. The simulation results show the approval of this circuit that it has adequate basic performances for a real-time fuzzy controller and a fuzzy computer.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.209-212
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• 2001

DRAM과 Logic을 하나의 칩 위에 제조하기 위한 EDL (Embedded DRAM and Logic) 기술에 코발트 실리사이드가 접촉저항을 낮추기 위해 사용된다. 본 연구에서는 코발트 실리사이드 제조에 사용되는 보호막이 CMOS 소자의 전기적 특성에 미치는 영향을 조사하였다. EDL 제조공정이 완전히 진행된 소자에 적용된 실리사이드가 누설전류에 미치는 영향을 비교하였다. 또한 실리사이드 보호막이 전기적 신호의 delay에 미치는 영향을 평가하기 위해, 99개의 CMOS 인버터가 직렬연결되어 있는 평가패턴을 사용하였다. 이상의 결과로 TiN 보호막이 pMOSFET의 전류전달 능력과 그 결과로 생기는 속도지연 측면에서 Ti 보호막보다 우수함을 알 수 있었다.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.4
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• pp.55-61
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• 1994

The multiple valued logic(MVL) circuit with ROM type using current mode CMOS is presented in this paper. This circuit is composed of the multiple valued-to-binary(MV/B) decoder and the selection circuit. The MV/B decoder decodes the single input multiple valued signal to N binary signal, and the selection circuits is composed N$\times$N array of the selecion cells with ROM types. The selection cell is realized with the current mirror circuits and the inhibit circuits. The presented circuit is suitable for designing the circuit of MVL functions with independent variables, and reduces the number of selection cells for designing the circuit of symmetric MVL functions as many as {($N^2$-N)/2}+N. This circuit possess features of simplicity. expansibility for array and regularity, modularity for the wire routing. Also, it is suitable for VLSI implementation.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.7
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• pp.37-45
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• 1998

A 32-b self-timed parallel carry look-ahead adder (PCLA) designed for 0.5.mum. single threshold low power CMOS technology is demonstrated to operate with 2.7nsec delay at 8mW under 1V power supply. Compared to static PCLA and DPL adder, the self-timed PCLA designed with NORA logic provides the best performance at the power consumption comparable to other adder structures. The wave pipelined clock control play a crucial role in achieving the low power, high performance of this adder by eliminating the unnecessary power consumption due to the short-circuit current during the precharge phase. Th enoise margin has been improved by adopting the physical design of staic CMOS logic structure with controlled transistor sizes.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.7
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• pp.1005-1014
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• 1990

This paper proposes the control unit of a 32-bit high-performance RISC type microprocessor. This control unit controls the whole data path of target processor and on chip instruction/data caches in 4-stage pipelined scheme. For the improvement of speed, large parts of data path and control unit are designed by domino-CMOS and hard-wired circuit technology. First, in this paper, target processor's instruction set and data path are defined, and next, all signals needed to control the data path are analyzed. The decoder of control unit and clock generated logic block are implemented in DCAL(Dynamic CMOS Array Logic) with modified clock scheme for the purpose of speed up and supporting RISC processor's pipelined architecture efficiently.

• Proceedings of the IEEK Conference
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• 2002.07c
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• pp.1563-1566
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• 2002

A 16-bit adiabatic datapath for micro-power RISC processor is designed. The datapath is composed of a 3-read and 1-write multi-port adiabatic register file and an arithmetic and logic unit. A four-phase clock generator is also designed to provide supply clocks fer adiabatic circuits and the driving capability control scheme is proposed. All the clock line charge on the capacitive interconnections is recovered to recycle energy. Adiabatic circuits are designed based on efficient charge recovery logic(ECRL) and are implemented using a 0.35 fm CMOS technology. Functional and energy simulation is carried out to show the feasibility of adiabatic datapath. Simulation results show that the power consumption of the adiabatic datapath including supply clock generator is reduced by a factor of 1.4∼1.5 compared to that of the conventional CMOS.

• Journal of Information Display
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• v.6 no.4
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• pp.11-15
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• 2005

We propose a current mode logic circuit design method for LTPS TFT for enhancing circuit operating speed. Current mode inverter/buffers with passive resistive load had been designed and fabricated. Measurement results indicated that the smaller logic swing of the current mode allowed significantly faster operation than the static CMOS. In order to reduce the chip size, both all pTFT and all nTFT active load current mode inverter/buffer had been designed and analyzed by HSPICE simulation. Even though the active load current mode circuits were inferior to the passive load circuits, it was superior to static CMOS gates.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.2 no.1
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• pp.147-156
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• 1998

In this paper, an arithmetic processor using multi-valued logic is designed. For implementing of multi-valued logic circuits, we use current-mode CMOS circuits and design encoder which change binary voltage-mode signals to multi-valued current-mode signals and decoder which change results of arithmetic to binary voltage-mode signals. To reduce the number of partial product we use 4-radix SD number partial product generation algorithm that is an extension of the modified Booth's algorithm. We demonstrate the effectiveness of the proposed arithmetic circuits through SPICE simulation and Hardware emulation using FPGA chip.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.1-8
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• 2005

A $0.35\mu$m SiGe BiCMOS fabrication process has been timely developed, which is aiming at wireless RF ICs development and fast growing SiGe RF market. With non-selective SiGe epilayer, SiGe HBTs in this process used trapezoidal Ge base profile for the enhanced AC performance via Ge induced bandgap niuoin. The characteristics of hFE 100, $f_{T}\;45GHz,\;F_{max}\;50GHz,\;NF_{min}\;0.8dB$ have been obtained by optimizing not only SiGe base profile but also RTA condition after emitter polysilicon deposition, which enables the SiGe technology competition against the worldwide cutting edge SiGe BiCMOS technology. In addition, the process incorporates the CMOS logic, which is fully compatible with $0.35\mu$m pure logic technology. High Q passive elements are also provided for high precision analog circuit designs, and their quality factors of W(1pF) and inductor(2nH) are 80, 12.5, respectively.