• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 2003년도 ICCAS
• /
• pp.970-973
• /
• 2003

Abstract An idea to redce the direct-path short circuit current of the CMOS digital integrated circuit is present. The sample circuit model of the CMOS digital circuit is the CMOS current-control digital output driver circuit, which are also suitable for the low voltage supply integrated circuits as the simple digital inverter, are present in this title. The circuit consists of active MOS load as the current control source, which construct from the saturated n-channel and p-channel MOSFET and the general CMOS inverter circuits. The saturated MOSFET bias can control the output current and the frequency response of the circuit. The experimental results show that lower short circuit current control can make the lower frequency response of the circuit.

• Transactions on Electrical and Electronic Materials
• /
• 제14권5호
• /
• pp.235-241
• /
• 2013

A low power CMOS control circuit is applied in an integrated DC-DC buck converter. The integrated converter is composed of a feedback control circuit and power block with 0.35 ${\mu}m$ CMOS process. A current-sensing circuit is integrated with the sense-FET method in the control circuit. In the current-sensing circuit, a current-mirror is used for a voltage follower in order to reduce power consumption with a smaller chip-size. The N-channel MOS acts as a switching device in the current-sensing circuit where the sensing FET is in parallel with the power MOSFET. The amplifier and comparator are designed to obtain a high gain and a fast transient time. The converter offers well-controlled output and accurately sensed inductor current. Simulation work shows that the current-sensing circuit is operated with an accuracy of higher than 90% and the transient time of the error amplifier is controlled within $75{\mu}sec$. The sensing current is in the range of a few hundred ${\mu}A$ at a frequency of 0.6~2 MHz and an input voltage of 3~5 V. The output voltage is obtained as expected with the ripple ratio within 1%.

• 전자공학회논문지C
• /
• 제35C권7호
• /
• pp.11-19
• /
• 1998

A signal line potential variation due to the delta-I noise was physically investigated in CMOS integrated circuits. An equivalent circuit for the noise analysis was presented. The signal line was modeled as segmented RC-lumped circuits with the ground noise. Then the equivalent circuit was mathematically analyzed. Therebvy a new signal line potential variation model due to the switching mosie was developed. Th emodel was verified with 0.35.mu.m CMOS deivce model parameters. The model has an excellent agreement with HSPICE simulation. Thus the proposed model can be dirctly employed in the industry to design the high-performance integrted circuit design as well as integrated circuit package design.

• Journal of information and communication convergence engineering
• /
• 제6권3호
• /
• pp.270-274
• /
• 2008

This paper proposes an advanced signal processing circuit for a fingerprint sensor based on ridge resistivity. A novel fingerprint integrated sensor using ridge resistivity variation resulting from ridges and valleys on the fingertip is presented. The pixel level simple detection circuit converts from a small and variable sensing current to binary voltage out effectively. The sensor circuit blocks were designed and simulated in a standard CMOS 0.35 ${\mu}m$ process.

• 전자공학회논문지SC
• /
• 제40권4호
• /
• pp.275-281
• /
• 2003

0.5㎛ 2중 폴리 CMOS 공정을 이용하여 새로운 뉴럴 오실레이터를 설계, 제작하였다. 제안하는 뉴럴 오실레이터는 트랜스콘덕터 및 캐패시터와 비선형 가변 부성저항으로 이루어진다. 뉴럴 오실레이터의 입력단으로 사용되는 비선형 가변 부성저항은 정귀환의 트랜스콘덕터와 가우시안 분포의 전류전압 특성을 지니는 범프 회로를 이용하여 구현하였다. 또한 SPICE 모의실험을 통하여 제안한 오실레이터의 특성분석 후 집적회로 설계를 실시하였다. 한편 흥분성 및 억제성 시냅스로 연결된 4개의 뉴럴 오실레이터로 간단한 신경회로망을 구성하여 그 특성을 확인하였다. 집적회로로 제작된 뉴럴 오실레이터에 대하여 ± 2.5 V 전원 조건하에서 측정된 결과를 분석하고 모의실험 결과와 비교한다.

• 센서학회지
• /
• 제14권1호
• /
• pp.28-32
• /
• 2005

In this paper, a CMOS integrated detection circuit for capacitive type fingerprint sensor signal processing is described. We designed a detection circuit of charge-sharing sensing scheme. The proposed detection circuit increases the voltage difference between a ridge and valley. The test chip is composed of $160{\times}192$ array sensing cells (12 by $12.7{\;}mm^{2}$). The chip was fabricated on a 0.35 m standard CMOS process. Measured difference voltage between a ridge and valley was 0.95 V.

• 전자공학회논문지A
• /
• 제33A권4호
• /
• pp.136-141
• /
• 1996

In this paper, a new CMOS on-chip current reference circit for memory, operational amplifiers, comparators, and data converters is proposed. The reference current is almost independent of temeprature and power-supply variations. In the proposed circuit, the current component with a positive temeprature coefficient cancels that with a negative temperature coefficient each other. While conventional curretn and voltage reference circuits require BiCMOS or bipolar process, the presented circuit can be integrated on a single chip with other digiral and analog circits using a standard CMOS process and an extra mask is not needed. The prototype is fabricated employing th esamsung 1.0um p-well double-poly double-metal CMOS process and the chip area is 300um${\times}$135 um. The proposed reference current circuit shows the temperature coefficient of 380 ppm/.deg. C with the temperature changes form 30$^{\circ}C$ to 80$^{\circ}C$, and the output variation of $\pm$ 1.4% with the supply voltage changes from 4.5 V to 5.5 V.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제13권3호
• /
• pp.193-197
• /
• 2013

This paper presents a 5-bit true time delay circuit using a standard 0.18 ${\mu}m$ CMOS process for the broadband phased array antenna without the beam squint. The maximum time delay of ~106 ps with the delay step of ~3.3 ps is achieved at 5-20 GHz. The RMS group delay and amplitude errors are < 1 ps and <2 dB, respectively. The measured insertion loss is <27 dB and the input and output return losses are <12 dB at 5-15 GHz. The current consumption is nearly zero with 1.8 V supply. The chip size is $1.04{\times}0.85\;mm^2$ including pads.

• Journal of information and communication convergence engineering
• /
• 제7권2호
• /
• pp.215-218
• /
• 2009

In this paper, temperature stable current and voltage references using simple CMOS bias circuit are proposed. To obtain temperature stable characteristics of bias circuit a bandgap reference concept is used in a conventional circuit. The parasitic bipolar transistors or MOS transistors having different threshold voltage are required in a bandgap reference. Thereby the chip area increase or the extra CMOS process is required compared to a standard CMOS process. The proposed reference circuit can be integrated on a single chip by a standard CMOS process without the extra CMOS process. From the simulation results, the reference current variation is less than ${\pm}$0.44% over a temperature range from - $20^{\circ}C$ to $80^{\circ}C$. And the voltage variation is from - 0.02% to 0.1%.

• 한국정보통신학회논문지
• /
• 제13권6호
• /
• pp.1117-1122
• /
• 2009

본 논문에서는 온도 센서 및 온도 측정을 위한 제어회로를 설계하였다. 설계된 회로는 기존의 방법들과는 달리 일반적인 CMOS(Complementary Metal Oxide Semiconductor) 공정에서 추가 공정없이 제작 가능하도록 설계하였으며, 온도는 디지털 값으로 출력 되도록 구성하였다. 설계되어진 회로는 5volts 공급전압을 사용하였으며, 0.5${\mu}m$ CMOS 공정을 사용하였다. 온도 측정을 위한 회로는 PWM(Pulse Width Modulation) 제어회로, VCO(Voltage controlled oscillator), 카운터 그리고 레지스터로 구성되어 있다. PWM 제어회로의 동작 주파수는 23kHz 이며, VCO의 동작 주파수는 416kHz, 1MHz, 2MHz를 사용하였다. 회로의 동작은 SPICE(Simulation Program with Integrated Circuit Emphasis)를 사용하여 확인 하였다.