• 한국통신학회논문지
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• 제24권10A호
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• pp.1571-1578
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• 1999

본 논문은 Direct Sequence Code Division Multiple Access (DS-CDMA) Wireless Local Loop (WLL) 시스템의 Radio Transceiver Unit (RTU)를 위한 변조기 채널 카드와 변조기 VLSI 칩의 설계 및 구현에 대해서 서술했다. 변조기 채널 카드는 ASIC, FPGA 그리고 DSP를 이용하여 구현하였다. 구현된 변조기 ASIC칩은 ETRI가 제안한 Common Air Interface (CAI) 규격을 따랐고, 동작주파수는 32MHz, 회로의 크기는 40,000 게이트이다. 그리고 $0.6\mu\textrm{m}$ CMOS 공정으로 제작되었다. 본 변조기 ASIC 칩은 4개의 I,Q 채널을 처리할 수 있는 구조로 되어 있고 각 채널은 콘벌루션널 코딩, 블록 인터리빙, 스크램블링, 왈쉬 카버링, Pseudo Noise (PN) 확산 그리고 기저대역 필터링 기능 등을 포함한다. 변조기 채널 카드는 WLL 시스템 내 RTU의 서브 유니트의 하나이며 구현된 변조기 ASIC 및 채널 카드는 실제 WLL 시스템에 실장되어 그 성능 및 기능 요구사항을 만족함을 확인할 수 있었다.

• 대한전자공학회논문지
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• 제25권9호
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• pp.1115-1124
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• 1988

A two-dimensional systolic array for fast Fourier transform, which has a regular and recursive VLSI architecture is presented. The array is constructed with identical processing elements (PE) in mesh type, and due to its modularity, it can be expanded to an arbitrary size. A processing element consists of two data routing units, a butterfly arithmetic unit and a simple control unit. The array computes FFT through three procedures` I/O pipelining, data shuffling and butterfly arithmetic. By utilizing parallelism, pipelining and local communication geometry during data movement, the two-dimensional systolic array eliminates global and irregular commutation problems, which have been a limiting factor in VLSI implementation of FFT processor. The systolic array executes a half butterfly arithmetic based on a distributed arithmetic that can carry out multiplication with only adders. Also, the systolic array provides 100% PE activity, i.e., none of the PEs are idle at any time. A chip for half butterfly arithmetic, which consists of two BLC adders and registers, has been fabricated using a 3-um single metal P-well CMOS technology. With the half butterfly arithmetic execution time of about 500 ns which has been obtained b critical path delay simulation, totla FFT execution time for 1024 points is estimated about 16.6 us at clock frequency of 20MHz. A one-PE chip expnsible to anly size of array is being fabricated using a 2-um, double metal, P-well CMOS process. The chip was layouted using standard cell library and macrocell of BLC adder with the aid of auto-routing software. It consists of around 6000 transistors and 68 I/O pads on 3.4x2.8mm\ulcornerarea. A built-i self-testing circuit, BILBO (Built-In Logic Block Observation), was employed at the expense of 3% hardware overhead.

• 전자공학회논문지A
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• 제30A권12호
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• pp.88-97
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• 1993

Electrostatic Discharge(ESD) is one of the major reliability, issues for today's VLSI production. Since the gate oxide with a thickness of 100~300$\AA$ is vulnerable to several thousand volt of ESD surge, it is necessary to control the ESD events and design an efficient protection circuit. In this paper, physical mechanism of the catastrophic ESD damage is investigated by transient analysis based upon Human Body Model(HBM). Using two-dimensional electrothermal simulator, we study the failure mechanism of the output protection devices by ESD and discuss the design issues for the optimun protection network.

• 한국지능시스템학회:학술대회논문집
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• 한국퍼지및지능시스템학회 1993년도 Fifth International Fuzzy Systems Association World Congress 93
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• pp.977.2-980
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• 1993

The fuzzifier circuit DPFC 7 is presented. Its features are: programmable membership function, CMOS digital interface, analog and current mode internal processing and integrability without external components. It has been designed to obtain a basic efficient block for fuzzy processing, to be included in a future architecture.

• ETRI Journal
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• 제21권4호
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• pp.1-8
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• 1999

Thick metal 0.8${\mu}m$ CMOS technology on high resistivity substrate(RF CMOS technology) is demonstrated for the L-band RF IC applications, and we successfully implemented it to the monolithic 900 MHz and 1.9 GHz CMOS LNAs for the first time. To enhance the performance of the RF circuits, MOSFET layout was optimized for high frequency operation and inductor quality was improved by modifying the technology. The fabricated 1.9 GHz LNA shows a gain of 15.2 dB and a NF of 2.8 dB at DC consumption current of 15mA that is an excellent noise performance compared with the offchip matched 1.9 GHz CMOS LNAs. The 900 MHz LNA shows a high gain of 19 dB and NF of 3.2 dB despite of the performance degradation due to the integrating of a 26 nH inductor for input match. The proposed RF CMOS technology is a compatibel process for analog CMOS ICs, and the monolithic LNAs employing the technology show a good and uniform RF performance in a five inch wafer.

• 대한전자공학회논문지SD
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• 제40권12호
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• pp.72-79
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• 2003

본 논문에서는 CMOS 다치 논리회로를 이용한 32×32 Modified Booth 곱셈기를 제시하였다. 이 곱셈기는 Radix-4 알고리즘을 이용하였으며, 전류모드 CMOS 4차 논리회로로 구현하였다. 설계한 곱셈기는 트랜지스터 수를 기존의 전압 모드 2진 논리 곱셈기에 비해 63.2%, 이전의 다치 논리 곱셈기에 비해 37.3% 감소시켰다. 이 곱셈기는 내부 구조를 규칙적으로 배열하여 확장성을 갖도록 하였다. 설계한 회로는 3.3V의 공급전압과 단위전류 10㎂를 사용하여, 0.3㎛ CMOS 기술을 이용하여 구현하였으며 HSPICE를 사용하여 검증하였다. 시뮬레이션 결과, 설계한 곱셈기는 5.9㎱의 최대 전달지연시간과 16.9mW의 평균 전력소모 특성을 갖는다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.581-584
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• 2004

This paper presents an efficient heuristic algorithm to avoid crosstalk which effects to delay of CMOS digital circuit by downsizing and upsizing of Gate. The proposed algorithm divide into two step, step1 performs downsizing of gate, step2 performs upsizing, so that avoid adjacent aggressor to critical path in series. The proposed algorithm has been verified on LGSynth91 benchmark circuits and Experimental results show an average $8.64\%$ Crosstalk Avoidance effect. This result proved new potential of proposed algorithm.

• 전자공학회논문지D
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• 제36D권1호
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• pp.100-106
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• 1999

SOI MOSFET에서 바디 전압을 안정시키기 위하여 바디 저항과 콘택 소모면적을 줄이면서도 SOI 고유의 장점을 그대로 유지시키는 IBC(Island Body Contact) 구조를 창안하였다. 이 구조는 여러 MOSFEET 들의 바디를 서로 연결하여 같이 콘택을 형성함으로써 면적의 증가 없이 훌륭한 바디 콘택효과를 갖게 된다. VLSI 소자로서의 그 가능성을 소자 시뮬레이션과 제작된 소자와 회로의 측정실험을 통하여 확인하였다.

• 전자공학회논문지A
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• 제32A권1호
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• pp.234-243
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• 1995

An arry circuit is designed for parallel computation of vector-radix 2-D discrete cosine transform (VR-FCT) which is a fast algorithm of DCT. By using a 2-D array of processing elements (PEs), the butterfly structure of the VR-FCT can be efficiently implemented with high condurrency and local communication geometry. The proposed implementation features architectural medularity, regularity and locality, so that it is very suitable for VLSI realization. Also, no transposition memory is required. The array core for (8$\times$8) 2-D DCT, which is designed usign ISRC 1.5.mu.m N-Well CMOS technology, consists of 64 PEs arranged in (8$\times$8) 2-D array and contains about 98,000 transistors on an area of 138mm$^{2}$. From simulation results, it is estimated that (8$\times$8) 2-D DCT can be computed in about 0.88 .mu.sec at 50 MHz clock frequency, resulting in the throughput rate of about 72${\times}10^[6}$ pixels per second.

• 대한전자공학회논문지
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• 제27권6호
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• pp.963-971
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• 1990

This paper proposes a memory intensive VLSI architecture for the realization of real-time 3x3 neighborhood processor based on the distributed arithmetic. The proposed architecture is characterized by a bit serial and multi-kernel parallel processing which exploits the pixel kernel parallelism and concurrency. The chip implements 8 neighborhood processing elements in parallel with efficirnt input and output modules which operate concurrently. Besides the a4chitectural design of a neighborhood processor, the design methodology using module generator concept has been considered and MOGOT(MOdule Generator Oriented VLSI design Tool) has been constructed based on the workstation. Based on these design environments MOGOT, it has been shown that the main part of the suggested architecture can be designed efficiently using 2\ulcorner double metal CMOS technology. It includes design of input delay and data conversion module, look-up table for inner product operation, carry save accumulator, output data converter and delay module, and control module.