• The Journal of Korean Institute of Communications and Information Sciences
• /
• 제15권7호
• /
• pp.628-637
• /
• 1990

In this paper we present on architecture for a high sppeed CMOS multiplier which can be used for real-time digital signal processing. And a synthesis method for designing highly parallel algorithms in VLSI is presented. A parallel multiplier design based on the modified Booth's algorithms and Ling's algorthm. This paper addresses the design of multiplier capable of accpting data in 2's complement notation and coefficients in 2's complement notation. Multiplier consists of an interative array of sequential cells, and are well suited to VLSI implementation as a results of their modularity and regularity. Booth's decoders can be fully tested using a relatively small number af test vector.

• Journal of the Korean Institute of Telematics and Electronics
• /
• 제21권5호
• /
• pp.61-66
• /
• 1984

In this paper a custom design of CMOS PLA using procedual language, CHISEL is presented. Library of cells of PLA pieces are formed. A typical PLA is used as a control logic for the protector circuit. NCR's design rules are applied to program CMOS PLA using CHISEL which is a VILI layout language made by extending C language.

• ETRI Journal
• /
• 제26권5호
• /
• pp.486-492
• /
• 2004

The emergence of wide channel bandwidth wireless standards requires the use of a highly linear, wideband integrated CMOS baseband chain with moderate power consumption. In this paper, we present the design of highly linear, wideband active RC filters and a digitally programmable variable gain amplifier. To achieve a high unity gain bandwidth product with moderate power consumption, the feed-forward compensation technique is applied for the design of wideband active RC filters. Measured results from a $0.5{\mu}m$ CMOS prototype baseband chain show a cutoff frequency of 10 MHz, a variable gain range of 33 dB, an in-band IIP3 of 13 dBV, and an input referred noise of 114 ${\mu}Vrms$ while dissipating 20 mW from a 3 V supply.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• 제36권11C호
• /
• pp.662-672
• /
• 2011

This paper presents a new edge-preserving algorithm and its VLSI architecture for block artifact reduction. Unlike previous approaches using block classification, our algorithm utilizes pixel classification to categorize each pixel into one of two classes, namely smooth region and edge region, which are described by the edge-preserving maps. Based on these maps, a two-step adaptive filter which includes offset filtering and edge-preserving filtering is used to remove block artifacts. A pipelined VLSI architecture of the proposed deblocking algorithm for HD video processing is also presented in this paper. A memory-reduced architecture for a block buffer is used to optimize memory usage. The architecture of the proposed deblocking filter is prototyped on FPGA Cyclone II, and then we estimated performance when the filter is synthesized on ANAM 0.25 ${\mu}m$ CMOS cell library using Synopsys Design Compiler. Our experimental results show that our proposed algorithm effectively reduces block artifacts while preserving the details.

• Proceedings of the IEEK Conference
• /
• 대한전자공학회 2002년도 ITC-CSCC -1
• /
• pp.349-352
• /
• 2002

This paper describes a design of a 1bit Carry Propagate Free Adder/Subtracter (CPFA/S) VLSI using the Adiabatic Dynamic CMOS Logic (ADCL) circuit technology. Using a PSPICE simulator, energy dissipation of the ADCL 1bit CPFA/S is compared with that of the CMOS 1bit CPFA/S. As a result, energy dissipation of the proposed ADCL circuits is about 1/23 as low as that of the CMOS circuits. The transistors count, propagation-delay tittle and energy dissipation of the ADCL 4bit CPFA/S are compared with those of the ADCL 4bit Carry Propagate Adder/Subtracter (CPA/S). The transistors count and propagation-delay tittle are found to be reduced by 7.02% and 57.1%, respectively. Also, energy dissipation is found to be reduced by 78.4%. Circuit operation and performance are evaluated using a chain of the ADCL 1bit CPFA/S fabricated in a $1.21mutextrm{m}$ CMOS process. The experimental results show that addition and subtraction are operated with clock frequencies up to about 1㎒.

• Proceedings of the Korea Multimedia Society Conference
• /
• 한국멀티미디어학회 2002년도 춘계학술발표논문집(상)
• /
• pp.44-48
• /
• 2002

본 논문에서는 한국형 디지털 서명 표준인 KCDSA에서 사용할 목적으로 개발된 국내 해쉬 함수 표준인 HAS-160 알고리즘을 VLSI 설계하였다. 하나의 단계연산을 하나의 클럭에 동작하고 단계연산의 핵심이 되는 4개의 직렬 2/sup 3/ 모듈러 가산기를 CSA(Carry Save Adder)로 구현하여 캐리 전파시간을 최소로 하고 HAS-160 해쉬 알고리즘의 특징인 메시지 추가생성을 사전에 계산하여 지연시간을 줄이는 설계를 하였다. 설계된 해쉬 프로세서를 0.25 urn CMOS 스탠다드 셀 라이브러리에서 합성한 결과 총 게이트 수는 약 21,000개이고 최대 지연 시간은 5.71 ns로 최대 동작주파수 약 175 MHz서 약 1,093 Mbps의 성능을 얻을 수 있었다.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• 제43권2호
• /
• pp.96-104
• /
• 2006

This paper presents design methodology, encient verification and implementation of a CAN protocol controller. The design methodology uses a heuristic technique to make the design flexible and cost effective. Using the design methodology, we created architecture for a CAN controller which has flexible and low cost features. For faster time-to-market and reliable operation of the designed CAN protocol controller, we p개posed a three-step verification process which uses three different kinds of verification techniques. The goal of this three-step verification is to reduce the number of test sequences in order to rapidly implement the design without loss of reliability for faster time-to-market. The designed CAN protocol controller was fabricated using a 0.35 micrometer CMOS technology.

• Journal of the Korean Institute of Telematics and Electronics B
• /
• 제30B권11호
• /
• pp.1-10
• /
• 1993

This paper proposes a High Performance Full-Swing BiCMOS (HiF-BiCMOS) circuit which improves on the conventional BiCMOS circuit. The HiF-BiCMOS circuit has all the merits of the conventional BiCMOS circuit and can realize full-swing logic operation. Especially, the speed of full-swing logic operation is much faster than that of conventional full-swing BiCMOS circuit. And the number of transistors added in the HiF-BiCMOS for full-swing logic operation is constant regardless of the number of logic gate inputs. The HiF-BiCMOS circui has high stability to variation of environment factors such as temperature. Also, it has a preamorphized Si layer was changed into the perfect crystal Si after the RTA. Remarkable scalability for power supply voltage according to the development of VLSI technology. The power dissipation of HiF-BiCMOS is very small and hardly increases about a large fanout. Though the Spice simulation, the validity of the proposed circuit design is proved.

• The Magazine of the IEIE
• /
• 제23권4호
• /
• pp.84-93
• /
• 1996

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• 제13권9호
• /
• pp.729-734
• /
• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.