• Title/Summary/Keyword: CMOS회로

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Disign Technique and Testability Analysis of High Speed Full-Swing BiCMOS Circuits (테스트가 용이한 고속 풀 스윙 BiCMOS회로의 설계방식과 테스트 용이도 분석)

  • Lee, Jae Min;Jung, Kwang Sun
    • Journal of the Korean Society of Industry Convergence
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    • v.4 no.2
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    • pp.199-205
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    • 2001
  • With the growth of BiCMOS technology in ASIC design, the issue of analyzing fault characteristics and testing techniques for BiCMOS circuits become more important In this paper, we analyze the fault models and characteristics of high speed full-swing BiCMOS circuits and the DFT technique to enhance the testability of full-swing high speed BiCMOS circuits is discussed. The SPICE simulation is used to analyze faults characteristics and to confirm the validity of DFT technique.

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Design of 24-GHz/77-GHz Dual Band CMOS Low Noise Amplifier (24-GHz/77-GHz 이중 대역 CMOS 저 잡음 증폭기 설계)

  • Sung, Myeong-U;Kim, Shin-Gon;Rastegar, Habib;Choi, Geun-Ho;Tall, Abu Abdoulaye;Kurbanov, Murod;Choi, Seung-Woo;Ryu, Jee-Youl;Noh, Seok-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2015.05a
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    • pp.824-825
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    • 2015
  • 본 논문은 차량 레이더용 24-GHz/77-GHz 이중 대역 CMOS 저 잡음 증폭기를 제안한다. 이러한 회로는 1.8볼트 전원에서 동작하며, 저 전압 전원 공급에서도 높은 전압 이득과 낮은 잡음지수를 가지도록 설계하였다. 제안한 회로는 TSMC $0.13-{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계되어 있다. 전체 칩 면적을 줄이기 위해 가능한한 많은 부분에 실제 수동형 인덕터 대신 전송선을 이용하였다. 제안한 회로는 최근 발표된 연구결과에 비해 높은 전압 이득, 낮은 잡음지수 및 작은 칩 크기 특성을 보였다.

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Design of 77-GHz CMOS Power Amplifier (77-GHz CMOS 전력 증폭기 설계)

  • Choi, Geun-Ho;Sung, Myeong-U;Rastegar, Habib;Kim, Shin-Gon;Tall, Abu Abdoulaye;Kurbanov, Murod;Choi, Seung-Woo;Ryu, Jee-Youl;Noh, Seok-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2015.05a
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    • pp.837-838
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    • 2015
  • 본 논문은 차량 충돌 방지 장거리 레이더용 고 이득 77-GHz CMOS 전력 증폭기를 제안한다. 이러한 회로는 1.8볼트 전원전압 및 77-GHz의 주파수에서 동작한다. 제안한 회로는 TSMC $0.13-{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{max}=120/140GHz$)으로 설계되어 있다. 전체 칩 면적을 줄이기 위해 가능한한 많은 부분을 실제 수동형 인덕터 대신 전송선을 이용하였다. 제안한 회로는 최근 발표된 연구결과에 비해 가장 높은 전력이득과 가장 작은 칩 면적 특성을 보였다.

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Estimation of Short Circuit Power in Static CMOS Circuits (정적 CMOS 회로의 단락 소모 전력 예측 기법)

  • Baek, Jong-Humn;Jung, Seung-Ho;Kim, Seok-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.11
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    • pp.96-104
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    • 2000
  • This paper presents a simple method to estimate short-circuit power dissipation for static CMOS logic circuits. Short-circuit current expression is derived by accurately interpolating peak points of actual current curves which is influenced by the gate-to-drain coupling capacitance. It is shown through simulations that the proposed technique yields better accuracy than previous methods when signal transition time and/or load capacitance decreases, which is a characteristic of the present technological evolution. The proposed analytical expressions can be easily applied in such applications as power estimation even when the current expression is changed.

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Photo Diode and Pixel Modeling for CMOS Image Sensor SPICE Circuit Analysis (CMOS 이미지센서 SPICE 회로 해석을 위한 포토다이오드 및 픽셀 모델링)

  • Kim, Ji-Man;Jung, Jin-Woo;Kwon, Bo-Min;Park, Ju-Hong;Park, Yong-Su;Lee, Je-Won;Song, Han-Jung
    • 전자공학회논문지 IE
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    • v.46 no.4
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    • pp.8-15
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    • 2009
  • In this paper, we are indicated CMOS Image sensor circuit SPICE analysis for the Photo Diode and pixel Modeling. We get a characteristic of the photoelectric current using a device simulator Medici and develop the Photodiode model for applying a SPICE simulation. For verifying the result, We compared the result of SPICE simulation with the result of mixed mode simulation about the testing circuit structure consisted photodiode and NMOS.

A 3.3V/5V Low Power TTL-to-CMOS Input Buffer Controlled by Internal Activation Clock Pulse (활성 클럭펄스로 제어되는 3.3V/5V 저전력 TTL-to-CMOS 입력 버퍼)

  • Bae, Hyo-Kwan;Ryu, Beom-Seon;Cho, Tae-Won
    • Journal of IKEEE
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    • v.5 no.1 s.8
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    • pp.52-58
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    • 2001
  • This paper describes a TTL-to-CMOS input buffer of an SRAM which dissipates a small operating power dissipation. The input buffer utilizes a transistor structure with latch circuit controlled by a internal activation clock pulse. During the low state of that pulse, input buffer is disabled to eliminate dc current. Otherwise, the input buffer operates normally. Simulation results showed that the power-delay product of the purposed input buffer is reduced by 33.7% per one input.

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High Gain 24-GHz CMOS Low Noise Amplifier (고 이득 24-GHz CMOS 저 잡음 증폭기)

  • Sung, Myeong-U;Rastegar, Habib;Choi, Geun-Ho;Kim, Shin-Gon;Kurbanov, Murod;Chandrasekar, Pushpa;Kil, Keun-Pil;Ryu, Jee-Youl;Noh, Seok-Ho;Yoon, Min
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2016.05a
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    • pp.702-703
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    • 2016
  • 본 논문은 차량 단거리 레이더용 고 이득 24-GHz CMOS 저 잡음 증폭기를 제안한다. 이러한 회로는 1.8볼트 전원에서 동작하며, 저 전압 전원 공급에서도 높은 전압 이득과 낮은 잡음지수를 가지도록 설계하였다. 제안한 회로는 TSMC $0.13-{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계되어 있다. 제안한 회로는 최근 발표된 연구결과에 비해 높은 전압이득 및 낮은 잡음지수 특성을 보였다.

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An Efficient Collapsing Algorithm for Current-based Testing Models in CMOS VLSI (CMOS VLSI를 위한 전류 테스팅 기반 고장모델의 효율적인 중첩 알고리즘)

  • Kim Dae lk;Bae Sung Hwan
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.10A
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    • pp.1205-1214
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    • 2004
  • For tile physical defects occurring in CMOS circuits which are not handled well by voltage-based testing, current testing is remarkable testing technique. Fault models based on defects must accurately describe the behaviour of the circuit containing the defect. In this paper, An efficient collapsing algorithm for fault models often used in current testing is proposed. Experimental results for ISCAS benchmark circuits show the effectiveness of the proposed method in reducing the number of faults that have to be considered by fault collapsing and its usefulness in various current based testing models.

Design of 24GHz CMOS Mixer with High Conversion and Low Power (고 변환이득 및 저 전력 24GHz CMOS 믹서 설계)

  • Kim, Shin-Gon;Choi, Seong-Kyu;Kim, Cheol-Hwan;Sung, Myeong-U;Rastegar, Habib;Choi, Geun-Ho;Ryu, Jee-Youl;Noh, Seok-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2014.10a
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    • pp.780-781
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    • 2014
  • 본 논문에서는 차량 추돌 방지 단거리 레이더용 고 변환이득 및 저전력 24GHz CMOS 믹서를 제안한다. 이러한 회로는 2볼트 전원전압에서 동작하며, 저 전압 전원 공급에서도 높은 변환 이득과 낮은 잡음지수를 가지도록 설계되어 있다. 제안한 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계하였다. 전체 칩 면적을 줄이기 위해 실제 수동형 인덕터 대신 전송선을 이용하였다. 제안한 회로는 최근 발표된 연구결과에 비해 가장 높은 10.96dB의 변환이득, 7.6dBm의 IIP3를 보였고, 가장 적은 5mW의 소비전력 및 $0.2{\times}0.2m^2$의 칩 크기 특성을 보였다.

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A High-Voltage Compliant Neural Stimulation IC for Implant Devices Using Standard CMOS Process (체내 이식 기기용 표준 CMOS 고전압 신경 자극 집적 회로)

  • Abdi, Alfian;Cha, Hyouk-Kyu
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.5
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    • pp.58-65
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    • 2015
  • This paper presents the design of an implantable stimulation IC intended for neural prosthetic devices using $0.18-{\mu}m$ standard CMOS technology. The proposed single-channel biphasic current stimulator prototype is designed to deliver up to 1 mA of current to the tissue-equivalent $10-k{\Omega}$ load using 12.8-V supply voltage. To utilize only low-voltage standard CMOS transistors in the design, transistor stacking with dynamic gate biasing technique is used for reliable operation at high-voltage. In addition, active charge balancing circuit is used to maintain zero net charge at the stimulation site over the complete stimulation cycle. The area of the total stimulator IC consisting of DAC, current stimulation output driver, level-shifters, digital logic, and active charge balancer is $0.13mm^2$ and is suitable to be applied for multi-channel neural prosthetic devices.