• 한국대기환경학회지
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• 제26권6호
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• pp.624-632
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• 2010

Perfluorocarbons (PFCs) are widely used in semiconductor industry. These gases need to be removed efficiently because of their strong absorption of infrared radiation and long atmospheric lifetimes which cause the global warming effect. To destruct $CF_4$, a waterjet gliding arc plasma was designed and manufactured. The highest $CF_4$ destruction showed at waterjet plasma case, compared to plasma discharge only or water scrubber only, respectively. In addition, it could be known that the $CF_4$ destruction should be associated with the electron and OH radicals. The operating conditions such as waterjet flow rate, initial $CF_4$ concentration, total gas flow rate, specific energy input were investigated experimentally using a plasma waterjet scrubber. Through the parametric studies, the highest $CF_4$ destruction of 94.5% was achieved at 0.2% $CF_4$, 2.1 kJ/L SEI, 20 L/min total gas flow rate and 18.5 mL/min waterjet flow rate.

• Transactions on Electrical and Electronic Materials
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• 제18권2호
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• pp.74-77
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• 2017

In this work, we investigated the etching characteristics of TaNO thin films and the selectivity of TaNO to $SiO_2$ in an $O_2$/CF4/Ar inductively coupled plasma (ICP) system. The maximum etch rate of TaNO thin film was 297.1 nm/min at a gas mixing ratio of O2/CF4/Ar (6:16:4 sccm). At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. X-ray photoelectron spectroscopy analysis showed the efficient destruction of the oxide bonds by the ion bombardment, as well as the accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CF_4$-containing plasmas.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.879-881
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• 1999

Radical and ion densities in a CF4 plasma have been calculated as a function of input power density. 9as pressure and feed gas flow rate using simple 0 dimensional global model. Fluorine atom is found to be the most abundant neutral particle. Highly fragmented species such as CF and CF+ become dominant neutral and ionic radical at the high power condition. As the pressure increases. ion density increases but ionization rate decreases due to the decrease in electron temperature. The fractional dissociation of CF4 feed gas decreases with pressure after increasing at the low pressure range. Electron density and temperature are almost independent of flow rate within calculation conditions studied. The fractional dissociation of CF4 monotonically decreases with flow rate. which results in increase in CF3 and decrease in CF density. The calculation results show that the SiO2 etch selectivity improvement correlates to the increase in the relative density of fluorocarbon ion and neutral radicals which has high C/F ratio.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.22-25
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• 2004

In this study, BST thin films were etched with inductively coupled $CF_4/(Cl_2+Ar)$ plasmas. The etch characteristics of BST thin films as a function of $CF_4/(Cl_2+Ar)$ gas mixtures were analyzed using quadrupole mass spectrometry (QMS) and optical emission spectroscopy (OES). The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of $CF_4$ to the $Cl_2/Ar$ mixture increased chemical effect. The optimum condition appears to be under a 10 % $CF_4/(Cl_2+Ar)$ gas mixture in the present work.

• Journal of information and communication convergence engineering
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• 제5권3호
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• pp.215-218
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• 2007

In this paper, amorphous semiconductor and insulator thin film are etched using reactive ion etcher. At that time, we experiment in various RIE conditions (chamber pressure, gas flow rate, rf power, temperature) that have effects on quality of thin film. The using gases are $CF_4,\;CF_4+O_2,\;CCl_2F_2,\;CHF_3$ gases. The etching of a-Si:H thin film use $CF_4,\;CF_4+O_2$ gases and the etching of $a-SiO_2,\;a-SiN_x$ thin film use $CCl_2F_2,\;CHF_3$ gases. The $CCl_2F_2$ gas is particularly excellent because the selectivity of between a-Si:H thin film and $a-SiN_x$ thin film is 6:1. We made precise condition on dry etching with uniformity of 5%. If this dry etching condition is used, that process can acquire high yield and can cut down process cost.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.774-779
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• 1995

Process optimization experiments based on the Taguchi method were performed in order to set up the optimal process conditions for the contact oxide etching process module which was built in order to be attached to the cluster system of multi-processing purpose. In order to compare with Taguchi method, the contact oxide etching process carried out with different process parameters(CHF$_{3}$/CF$_{4}$ gas flow rate, chamber pressure, RF power and magnetic field intensity). Optimal etching characteristics were evaluated in terms of etch rate, selectivity, uniformity and etched profile. In this paper, as a final analysis of experimental results the optimal etching characteristics were obtained at the process conditions of CHF3/CF4 gas flow rate = 72/8 sccm, chamber pressure = 50 mTorr, RF power = 500 watts, and magnetic field intensity = 90 gauss.

• Journal of Electrical Engineering and Technology
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• 제13권6호
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• pp.2385-2391
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• 2018

This paper is devoted to detecting decomposition characteristics of Iodotrifluoromethane ($CF_3I$) under alternating current (AC) discharges or load current interruptions. The decomposition products are measured utilizing chromatography-mass spectroscopy. It is found that less than 1% $CF_3I$ gas decomposed after several interruptions at load current of 200 A or hundred times of AC discharges. However, under interruptions at a current of 400 A, more than 95% $CF_3I$ gas decomposed into carbon tetrafluoride ($CF_4$) and hexafluoroethane ($C_2F_6$). The equilibrium compositions based on Gibbs free energy minimization of $CF_3I$ was calculated to explain the decomposition mechanism.

• Journal of Electrical Engineering and Technology
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• 제12권5호
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• pp.2007-2013
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• 2017

In order to give hydrophobic surface properties on carbon steel, the fluorinated amorphous carbon films were prepared by using linear 2.45GHz microwave PECVD device. Two different process approaches have been tested. One is direct deposition of a-C:H:F films using admixture of $Ar/CH_4/CF_4$ working gases and the other is surface treatment using $CF_4$ plasma after deposition of a-C:H film with $Ar/CH_4$ binary gas system. $Ar/CF_4$ plasma treated surface with high $CF_4$ gas ratio shows best hydrophobicity and durability of hydrophobicity. Nanometer scale surface roughness seems one of the most important factors for hydrophobicity within our experimental conditions. The properties of a-C:H:F films and $CF_4$ plasma treated a-C:H films were investigated in terms of surface roughness, hardness, microstructure, chemical bonding, atomic bonding structure between carbon and fluorine, adhesion and water contact angle by using atomic force microscopy (AFM), nano-indentation, Raman analysis and X-ray photoelectron spectroscopy (XPS).

• 마이크로전자및패키징학회지
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• 제9권2호
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• pp.27-31
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• 2002

본 연구에서는 ICP 식각장비에서 700 W의 RF전력과 -200 vo1t의 dc 바이어스 전압 및 15 mTorr의 반응로 압력에서 $Ar/CF_2$ 혼합가스에 $C1_2$가스를 첨가하면서 $CeO_2$ 박막을 식각하였다 최대식각 속도는 10%의 $C1_2$ 가스를 첨가하였을 시에 250 $\AA$/min이었고, 이 조건에서 SBT에 대한 식각 선택비는 0.4이었다. XPS를 이용하여 식각된 $CeO_2$ 박막의 표면반응을 검토하였다. Ce 피크는 대부분 $CeO_2$또는 $Ce_2O_3$형태로 Ce-O 결합상태임을 관찰할 수 있었다. 대부분의 Cl 피크는 CeClx 또는 $Ce_x/O_yCl_z$ 형태로 Ce 원자와 결합하고 있었다

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.314-318
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• 2002

The etching behaviors of the ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). The maximum etch rate of $YMnO_3$ thin film is 300 ${\AA}/min$ at Ar/$Cl_2$of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, nonvolatile $YF_x$ compounds were found on the surface of $YMnO_3$ thin film which is etched in Ar/$Cl_2$/CF$_4$plasma. The etch profile of YMnO$_3$film is improved by addition of $CF_4$ gas into the Ar/$Cl_2$ plasma. These results suggest that YF$_{x}$ compound acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.