• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.985-989
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• 2005

본 논문에서는 비정질 반도체 및 절연체의 etching을 RIE를 사용하여 etching 조건을 결정하는 요인(chamber pressure, gas flow rate, rf power, 온도 등)들을 변화시켜 실험하였고, gas는 비정질 실리콘 박막의 reactive ion etching에 주로 사용되는 $CF_4,\; CF_4+O_2,\;CCl_2F_2,\;CHF_3\;gas$ 등을 사용하였다. 여기서 실리콘 박막의 식각은 $CF_4,\;CCl_2F_2,\;gas$를 그리고 insulator 막인 SiNx 박막의 식각은 $CF_4+O_2,\;CHF_3\;gas$를 사용하였다. 특히 $CCl_2F_2$ gas는 insulator 막인 SiNx 박막과의 식각 selectivity가 6:1로서 우수하기 때문이다. 정확한 control에 의해 높은 수율 (Yield) 을 얻을 수 있어 cost를 절감할 수 있다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.5
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• pp.393-397
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• 2002

Polyimide (PI) films have been studied widely as the interlayer dielectric materials due to a low dielectric constant, low water absorption, high gap-fill and planarization capability. The polyimide film was etched using inductively coupled plasma system. The etcying characteristics such as etch rate and selectivity were evaluated at different $CF_4/(CF_4+O_2)$chemistry. The maximum etch rate was 8300 ${\AA}/min$ and the selectivity of polyimide to SiO$_2$was 5.9 at $CF_4/(CF_4+O_2)$ of 0.2. Etch profile of polyimide film with an aluminum pattern was measured by a scanning electron microscopy. The vertical profile was approximately $90^{\circ}$ at $CF_4/(CF_4+O_2)$ of 0.2. As 20% $CF_4$ were added into $O_2$ plasma from the results of the optical emission spectroscopy, the radical densities of fluorine and oxygen increased with increasing $CF_4$ concentration in $CF_4/O_2$ from 0 to 20%, resulting in the increased etch rate. The surface reaction of etched PI films was investigated using x-ray photoelectron spectroscopy.

• Journal of Korean Society for Atmospheric Environment
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• v.26 no.1
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• pp.85-93
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• 2010

$CF_4$ removal characteristics were investigated using an elongated arc reactor. The advantage of the elongated arc reactor includes direct use of treated gas as plasma operating gas and the enhancement of the removal reaction by using a thermo-chemistry and a plasma induced chemistry at the same time. Geometrical configurations, such as the length of the reactor and the shape of a throat, were tested to get an optimized removal efficiency with low power consumption. As results, over 95% of $CF_4$ removal was obtained with 300 lpm of total flowrate for various $CF_4$ concentration (0.1~1%). Corresponding specific energy density (SED), which means required electrical energy to treat the unit volume of treated gas, is about 3.5 kJ/L, The present technique can be applied to real applications by satisfying three major concerns, those are the high flowrate of treated gas, high removal efficiency (> 95%), and low power consumption (< 10 kJ/L).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.141-144
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• 2001

An accurate cross sections set are necessary for the quantitatively understanding and modeling of plasma phenomena. By using the electron swarm method. we determine an accurate electron cross sections set for objective atoms or molecule at low electron energy range. In previous paper, we calculated the electron transport coefficients in pure $CF_4$ molecular gas by using two-term approximation of the Boltzmann equation. And by using this simulation method. we confirmed erroneous calculated results of transport coefficients for $CF_{4}$ molecule treated in this paper having 'C2v symmetry' as $C_{3}H_{8}$ and $C_{3}F_{8}$ which have large vibrational excitation cross sections which may exceed elastic momentum transfer cross section. Therefore, in this paper, we calculated the electron transport coefficients(W and $ND_L$) in pure $CF_4$ gas by using multi-term approximation of the Boltzmann equation by Robson and Ness which was developed at lames-Cook university, and discussed an application and/or validity of the calculation method by comparing the calculated results by two-term and multi-term approximation code.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.141-144
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• 2001

An accurate cross sections set are necessary for the quantitatively understanding and modeling of plasma phenomena. By using the electron swarm method, we determine an accurate electron cross sections set for objective atoms or molecule at low electron energy range. In previous paper, we calculated the electron transport coefficients in pure CF$_4$ molecular gas by using two-term approximation of the Boltzmann equation. And by using this simulation method, we confirmed erroneous calculated results of transport coefficients for CF$_4$ molecule treated in this paper having 'C2v symmetry'as C$_3$H$_{8}$ and C$_3$F$_{8}$ which have large vibrational excitation cross sections which may exceed elastic momentum transfer cross section. Therefore, in this paper, we calculated the electron transport coefficients(W and ND$_{L}$) in pure CF$_4$ gas by using multi-term approximation of the Boltzmann equation by Robson and Ness which was developed at James-Cook university, and discussed an application and/or validity of the calculation method by comparing the calculated results by two-term and multi-term approximation code.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1179-1182
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• 2004

This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients in $CF_4+Ar$ gas mixture by using two-term approximation of Boltzmann equation. but there is difference between the result of the two-term and the multi-term approximation of the Boltzmann equation in $CF_4$ gas. Therefore, in this paper, we calculated the electron drift velocity (W) in $CF_4+Ar$ gas mixture for range of E/N values from $0.01\sim500[Td}$ at the temperature was 300[K] and pressure was 1[Torr] by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation has been compared with each other for a range of E/N.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1455_1456
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• 2009

$SF_6$ is the most commonly used insulating gas in electrical systems. But In these days $SF_6$ mixtures and alternative gas has been studied because of global warming. so although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of $SF_6/CF_4$ mixtures in quasi-uniform field was performed. This experiments were carried out under AC voltages. The rod-rod electrode was used with 5 mm gap distance. The mixture of $SF_6/CF_4$ containing 20%,50%,70% of $SF_6$ were compared with pure $SF_6$ and $CF_4$ gas and gas pressure ranged from 0.1 to 0.5 MPa. The show that the breakdown voltages of gas were linearly increased according to the pressure in quasi-uniform field. For breakdown vlotage values of $(E/P)_{crit}$ are important. Because If values of (E/P) is a little more than $(E/P)_{crit}$, electrons rapidly increase and streamer discharge gernerates. Through this experiments values of $(E/P)_{crit}$ are found to vary with the ratio of $SF_6/CF_4$ mixture according to the following relationship. $V_b=(E/P)_{crit}{\cdot}p{\cdot}d$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.62-65
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• 2001

$SrBi_2Ta_2O_{9}$ thin films were etched in inductively coupled $Cl_{2}$/$CF_{4}$/Ar plasma. The maximum etch rate was 1060 $\AA\textrm{m}$/min in $Cl_{2}$/$CF_{4}$/Ar (80). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy. The etching of SBT thin films in $Cl_{2}$/$CF_{4}$/Ar were etched by chemically assisted reactive ion etching. The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase Cl radical.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.279-283
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• 1998

The electron swarm parameters in the$CF_4$(O.l%, 5%)+Ar mixtures are measured by time of flight method over the E/N(Td) range from 10 to 300LTdl. A two-term approximation of the Boltzmann equation analysis and Monte Carlo simulation have been also used to study electron transport coefficients. We have calculated W, NDL, NDT, $\alpha$ and the limiting breakdown electric field to gas mixtures ratio in pure $CF_4$ gas and$CF_4+Ar$ mixtures. The measured results and the calculated results have been compared each other paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.209-212
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• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI film was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was 8300$\AA$/min and vertical profile was approximately acquired 90$^{\circ}$ at CF$_4$/(CF$_4$+O$_2$) of 0.2. The selectivies of polyimide to PR and SiO$_2$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of 07CF4 were investigated by optical emission spectrometer (OES).