• 한국자기공명학회논문지
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• 제19권2호
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• pp.88-94
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• 2015

Bub1 is one of the spindle checkpoint proteins and plays a role in recruitment of the related proteins to kinetochore. Here, we studied the structural characteristic of the evolutionarily conserved 160 amino acid region in the N-terminus (hBub1 CD1), using Circular Dichroism (CD) and NMR. Our CD results showed that hBub1 CD1 is a highly helical protein and its structure was affected by pH: as pH was elevated to basic pH, the helical propensity increased. This could be related to the surface charge of the hBub1 CD1. However, the structural change did not largely depend on the salt concentration, though the thermal stability a little increased. The previous NMR analysis revealed that the hBub1 CD1 adopts eight helices, which is consistent with the CD result. Our result would be helpful for evaluating the molecular mechanism of the hBub1 CD1 and protein-protein interactions.

• 한국자기공명학회논문지
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• 제7권1호
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• pp.37-45
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• 2003

Human CD99 is a ubiquitous 32-kDa transmembrane protein encoded by mic2 gene. Recently it has been reported that expression of a splice variant of CD99 transmembrane protein (Type I and Type II) increases invasive ability of human breast cancer cells. To understand structural basis for cellular functions of CD99 Type II, we have initiated studies on hCD99$\^$TMcytoI/ using circular dichroism (CD) and multi-dimensional NMR spectroscopy. CD spectrum of hCD99$\^$TMytoI/ in the presence of 200mM DPC and CHAPS displayed an existence ${\alpha}$-helical conformation, showing that it could form an ${\alpha}$-helix under membrane environments. In addition, we have found that the cytoplasmic domain of CD99 would form symmetric dimmer in the presence of transmembrane domain. Although it has been rarely figured out the correlation between structure and functional mechanism of hCD99$\^$TMcytoI/, the dimerization or oligomerization would play an important role in its biological function.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권7호
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• pp.382-387
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• 2000

The $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$ single crystals were grown by the chemical transport reaction method using iodine as a transport agent. The $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$single crystals were crystallized into a defect chalcopyrite structure. The optical energy gap of the $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$ single crystals was found to be 3.377 eV and 2.924 eV, respectively, at 300 K. Blue emission with peaks in 456nm~466nm at 280K was observed in the $CdAl_2S_4$ single crystal. Optical absorption and emission peaks due to impurities in the $CdAl_2S_4 Co^{2+}$ single crystal were observed and described as originating from the electron transition between energy levels of the $Co^{2+} ion sited at the Td symmetry point.

• 한국재료학회지
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• 제30권1호
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• pp.1-7
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• 2020

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90 % due to the increase of N_carr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H₂ molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

• 정보처리학회논문지A
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• 제13A권3호
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• pp.231-240
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• 2006

본 논문에서는 무선 인터넷 프록시 서버 클러스터를 사용하여 무선 인터넷의 문제와 요구들을 캐싱(Caching), 압축(Distillation) 및 클러스터(Clustering)를 통하여 해결하려고 한다. TranSend는 클러스터링 기반의 무선 인터넷 프록시 서버로 제안된 것이나 시스템적인(Systematic) 방법으로 확장성을 보장하지 못하고 모듈간의 불필요한 통신구조로 인해 복잡하다는 단점을 가진다. 본 연구자들은 기존 연구에서 시스템적인 방법으로 확장성을 보장하는 CD-A라는 구조를 제안하였으나 이 역시 모듈간의 부분적으로 불필요한 통신 구조를 가진다는 단점을 가지고 있다. 이에 본 논문에서는 시스템적인 확장성과 단순한 구조를 가지는 클러스터링 기반의 통합형 무선 인터넷 프록시 서버를 제안한다. 16대의 컴퓨터를 사용하여 실험을 수행하였고 실험 결과 TranSend 시스템과 CD-A 시스템에 비해 각각 196%, 40%의 성능 향상을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.40-43
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• 1995

In this paper, structual, optical and electrical properties of CdZnS thin films prepared by electron beam evaporation method were studied. The crysta1 structure of CdZnS films deposited was hexagonal type with preferential orientation of the (002) plane parallel to the substrate. The results of optical transmittance of the CdZnS film show that absorption edge is shifted to ZnS and optical bandgap was larger wish increasing ZnS content. The resistivity of the CdZnS film is decreasing with increasing ZnS content and mininum for 20 mole%.

• Transactions on Electrical and Electronic Materials
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• 제3권2호
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• pp.28-31
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• 2002

The Cdl-xZnxTe film was fabricated by thermal evaporation for the flat-panel X-ray detector. The stoichimetric ratio and the crystal structure of a polycrystalline Cd$_{1-x}$ Zn$_{x}$Te were investigated by EPMA and XRD, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in the polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$_{0.7}$Zn$_{0.3}$Te thin film were measured to 0.37 nA/cm$^2$ and 260 pc/cm$^2$ at an applied voltage of 2.5 V/${\mu}{\textrm}{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$_{1-x}$ Zn$_{x}$Te detectors reduced the leakage current and improved the signal to noise ratio significantly.

• 마이크로전자및패키징학회지
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• 제26권4호
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• pp.107-111
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• 2019

We report the fabrication of a CdS/CuInGaSe (CdS/CIGS) structure with carbon nanotubes and its application as a photocathode for photoelectrochemical water splitting. CIGS thin films were fabricated using co-evaporation by RF magnetron sputtering, while CdS was fabricated by chemical bath deposition. Spray coated multi-wall carbon nanotube (CNT) film on CdS/CIGS thin film was investigated as a photocathode. The CNT-coated CdS/CIGS showed superior photocurrent density and exhibited improved photostability.

• Bulletin of the Korean Chemical Society
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• 제34권7호
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• pp.2191-2194
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• 2013

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.239-242
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• 2004

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$ respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on $CdIn_2S_4$ single crystal thin films was found to be $E_g(T)\;=\;2.7116\;eV\;-\;(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.