• Bulletin of the Korean Chemical Society
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• v.18 no.10
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• pp.1050-1052
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• 1997

The complexes M(CO)4-1,2-(PPh2)2-1,2-C2B10H10 (M=Cr 2a, Mo 2b, W 2c) have been prepared in good yields from readily available bis-diphenylphosphino-o-carboranyl ligand, closo-1,2-(PPh2)2-1,2-C2B10H10 (1), by direct reaction with Group Ⅵ metal carbonyls. The infrared spectra of the complexes indicate that there is an octahedral disposition of chelate bis-diphenylphosphino-o-carboranyl ligand around the metal atom. The crystal structure of 2a was determined by X-ray diffraction. Complex 2a crystallizes in the monoclinic space group P21/n with cell parameters a = 12.2360(7), b = 17.156(1), c = 16.2040(6) Å, V = 3354.1(3) Å3, and Z =4. Of the reflections measured a total of 2514 unique reflections with F2 > 3σ(F2) was used during subsequent structure refinement. Refinement converged to R1 = 0.066 and R2 = 0.071. Structural studies showed that the chromium atom had a slightly distorted pseudo-octahedral configuration about the metal center with two phosphine groups of o-carborane occupying the equatorial plane cis-orientation to each other. These metal carbonyl complexes are rapidly converted to the corresponding metal carbene complexes, [(CO)3M=C(OCH3)(CH3)]-1,2-(PPh2)2-1,2-C2B10H10 (M= Cr 3a, Mo 3b, W 3c), via alkylation with methyllithium followed by O-methylation with CF3SO3CH3.

• Journal of Ocean Engineering and Technology
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• v.25 no.3
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• pp.28-33
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• 2011

The thermal shock properties of SiC materials were investigated for high temperature applications. In particular, the effect of thermal shock temperature on the flexural strength of SiC materials was evaluated, in conjunction with a detailed analysis of their microstructures. The efficiency of a nondestructive technique using ultrasonic waves was also examined for the characterization of SiC materials suffering from a cyclic thermal shock history. SiC materials were fabricated by a liquid phase sintering process (LPS) associated with hot pressing, using a commercial submicron SiC powder. In the materials, a complex mixture of $Al_2O_3$ and $Y_2O_3$ powders was used as a sintering additive for the densification of the microstructure. Both the microstructure and mechanical properties of the sintered SiC materials were investigated using SEM, XRD, and a three point bending test. The SiC materials had a high density of about 3.12 Mg/m3 and an excellent flexural strength of about 700 MPa, accompanying the creation of a secondary phase in the microstructure. The SiC materials exhibited a rapid propagation of cracks with an increase in the thermal shock temperature. The flexural strength of the SiC materials was greatly decreased at thermal shock temperatures higher than $700^{\circ}C$, due to the creation of microcracks and their propagation. In addition, the SiC materials had a clear tendency for a variation in the attenuation coefficient in ultrasonic waves with an increase in thermal shock cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.130-130
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• 2009

This paper describes the temperature characteristics of polycrystalline 3C-SiC micro resonators. The 1.2 ${\mu}m$ and 0.4 ${\mu}m$ thick polycrystalline 3C-SiC cantilever and doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at temperature range of $25{\sim}200^{\circ}C$. The TCF(Temperature Coefficient of Frequency) of 60, 80 and 100 ${\mu}m$ long cantilever resonators were -9.79, -7.72 and -8.0 $ppm/^{\circ}C$. On the other hand, TCF of 60, 80 and 100 ${\mu}m$ long doubly clamped beam resonators were -15.74, -12.55 and -8.35 $ppm/^{\circ}C$. Therefore, polycrystalline 3C-SiC resonators are suitable with RF MEMS devices and bio/chemical sensor applications in harsh environments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.314-317
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• 2009

This paper describes the temperature characteristics of polycrystalline 3C-SiC micro resonators. The $1.2{\mu}m$ and $0.4{\mu}m$ thick polycrystalline 3C-SiC cantilever and doubly clamped beam resonators with $60{\sim}100{\mu}m$ lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at temperature range of $25{\sim}200^{\circ}C$. The TCF(Temperature Coefficient of Frequency) of 60, 80 and 100 On long cantilever resonators were -9.79, -7.72 and -8.0 ppm/$^{\circ}C$. On the other hand, TCF of 60, 80 and $100{\mu}m$ long doubly clamped beam resonators were -15.74, -12.55 and -8.35 ppm/$^{\circ}C$. Therefore, polycrystalline 3C-SiC resonators are suitable with RF MEMS devices and bio/chemical sensor applications in harsh environments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.700-704
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• 2003

This paper describes on characteristics of 2" 3C-SiC wafer bonding using PECVD (plasma enhanced chemical vapor deposition) oxide and HF (hydrofluoride acid) for SiCOI (SiC-on-Insulator) structures and MEMS (micro-electro-mechanical system) applications. In this work, insulator layers were formed on a heteroepitaxial 3C-SiC film grown on a Si (001) wafer by thermal wet oxidation and PECVD process, successively. The pre-bonding of two polished PECVD oxide layers made the surface activation in HF and bonded under applied pressure. The bonding characteristics were evaluated by the effect of HF concentration used in the surface treatment on the roughness of the oxide and pre-bonding strength. Hydrophilic character of the oxidized 3C-SiC film surface was investigated by ATR-FTIR (attenuated total reflection Fourier transformed infrared spectroscopy). The root-mean-square suface roughness of the oxidized SiC layers was measured by AFM (atomic force microscope). The strength of the bond was measured by tensile strength meter. The bonded interface was also analyzed by IR camera and SEM (scanning electron microscope), and there are no bubbles or cavities in the bonding interface. The bonding strength initially increases with increasing HF concentration and reaches the maximum value at 2.0 ％ and then decreases. These results indicate that the 3C-SiC wafer direct bonding technique will offers significant advantages in the harsh MEMS applications.ions.

• Food Science and Biotechnology
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• v.17 no.5
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• pp.1079-1085
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• 2008

The chemopreventive activity of sulforaphane (SFN) occurs through its inhibition of carcinogen-activating enzymes and its induction of detoxification enzymes. However, the exact mechanisms by which SFN exerts its anti-carcinogenic effects are not fully understood. Therefore, the mechanisms underlying the cytoprotective effects of SFN were examined in MCF-7 breast cancer cells. Exposure of cells to SFN (10 ${\mu}M$) induced a transcriptional change in the AKR1C3 gene, which is one of aldo-keto reductases (AKRs) family that is associated with detoxification and antioxidant response. Further analysis revealed that SFN elicited a dose- and time-dependent increase in the expression of both the NRF2 and AKR1C3 proteins. Moreover, this up-regulation of AKR1C3 was inhibited by pretreatment with antioxidant, N-acetyl-L-cysteine (NAC), which suggests that the up-regulation of AKR1C3 expression induced by SFN involves reactive oxygen species (ROS) signaling. Furthermore, pretreatment of cells with LY294002, a pharmacologic inhibitor of phosphatidylinositol 3-kinase (PI3K), suppressed the SFN-augmented Nrf2 activation and AKR1C3 expression; however, inhibition of PKC or MEK1/2 signaling with $G\ddot{o}6976$ or PD98059, respectively, did not alter SFN-induced AKR1C3 expression. Collectively, these data suggest that SFN can modulate the expression of the AKR1C3 in MCF-7 cells by activation of PI3K via the generation of ROS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.3-6
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• 2009

Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was $1.3^{\circ}$. The infrared absorbance spectrum indicated that the residual stress of AIN thin films grown on SiC buffer layers was nearly negligible. The 3C-SiC intermediate layers are promising for the realization of nitride based electronic and mechanical devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.651-654
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• 2010

This paper describes the thermal and mechanical properties of doped thin film 3C-SiC and porous 3C-SiC. In this work, the in-situ doped thin film 3C-SiC was deposited by using atmospheric pressure chemical vapor deposition (APCVD) method at $120^{\circ}C$ using single-precursor hexamethyildisilane: $Si_2(CH_3)_6$ (HMDS) as Si and C precursors. 0~40 sccm $N_2$ gas was used as doping source. After growing of doped thin film 3C-SiC, porous structure was achieved by anodization process with 380 nm UV-LED. Anodization time and current density were fixed at 60 sec and 7.1 mA/$cm^2$, respectively. The thermal and mechanical properties of the $N_2$ doped porous 3C-SiC was measured by temperature coefficient of resistance (TCR) and nano-indentation, respectively. In the case of 0 sccm, the variations of TCR of thin film and porous 3C-SiC are similar, but TCR conversely changed with increase of $N_2$ flow rate. Maximum young's modulus and hardness of porous 3C-SiC films were measured to be 276 GPa and 32 Gpa at 0 sccm $N_2$, respectively.

• Archives of Pharmacal Research
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• v.21 no.2
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• pp.106-112
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• 1998

Structure-activity relationship of 20 fluoroquinolones was studied using the susceptible and 4 resistant Escherichia coli which were developed against 4 fluoroquinolones [ciprofloxacin (1), KR-10755 (6), norfloxacin (2), and ofloxacin (3)] in our laboratory. The C-7 and C-8 substituents of fluoroquinolone were important in various functions such as the inhibitory activity on DNA gyrase, permeability, and efflux. Among 20 fluoroquinolones, compounds with a 3-methyl-3,7-diazabicyclo[3.3.0]octan-1(5)-ene-7-yl substituent at the C-7 position or a chlorine substituent at the C-8 position showed a good inhibitory activity on DNA gyrase (especially a mutated DNA gyrase). Compounds with a 3,7-diazabicyclo [3.3.0]octan-1(5)-ene-7-yl substituent at the C-7 position showed good permeability in the susceptible and resistant strains, while compounds with a fluorine substituent at the C-8 position were less eff luxed from cells.

• YAKHAK HOEJI
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• v.49 no.4
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• pp.299-305
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• 2005

Structure-activity relationship studies of allylamine type of antimycotics were carried out to evaluate the effect of naphthyl and methyl portion of naftifine. Compounds with 3,4-difluorophenyl (2a-5a), 4-hydroxyphenyl (2b-5b), 3-nitro­phenyl (2c-5c), 4-chlorobenzothiazoly (2d-5d) and 5-methylfurfural (2e-5e) instead of naphthyl group, and with hydrogen (3a-3e), methyl (4a-4e) and ethyl (5a-5e) in the place of methyl in naftifine were synthesized and tested for their in vitro anti-fungal activities against five different fungi. Fourteen compounds (3a, 4a, 5a, 3b, 4b, 5b, 3c, 4c, 5c, 3d, 4d, 3e, 4e and 5e) showed significant anti-fungal activities against T. mentagrophytes. (E)-N-(3-Phenyl-2-propenyl)-3,4-difluoro-ben­zenemethaneamine(3a), (E)_N_(3_phenyl_2_propenyl)_4_hydroxy_benzenemethaneamine(3b) and (E)-N-ethyl-N-(3-phenyl­2-propenyl)-3-nitro-benzenemethaneamine (5c) displayed moderate anti-fungal activities against all five different fungi.