• Title/Summary/Keyword: C.V.A.

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Analysis of timing characteristics of interconnect circuits driven by a CMOS gate (CMOS 게이트에 의해서 구동되는 배선 회로의 타이밍 특성 분석)

  • 조경순;변영기
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.4
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    • pp.21-29
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    • 1998
  • As silicon geometry shrinks into deep submicron and the operating speed icreases, higher accuracy is required in the analysis of the propagation delays of the gates and interconnects in an ASIC. In this paper, the driving characteristics of a CMOS gate is represented by a gatedriver model, consisting of a linear resistor $R_{dr}$ and an independent ramp voltage source $V_{dr}$ . We drivered $R_{dr}$ and $V_{dr}$ as the functions of the timing data representing gate driving capability and an effective capacitance $C_{eff}$ reflecting resistance shielding effect by interconnet circuits. Through iterative applications of these equations and AWE algorithm, $R_{dr}$ , $V_{dr}$ and $C_{eff}$ are comuted simulataneously. then, the gate delay is decided by $C_{eff}$ and the interconnect circuit delay is determined by $R_{dr}$ and $V_{dr}$ . this process has been implemented as an ASIC timing analysis program written in C language and four real circuits were analyzed. In all cases, we found less than 5% of errors for both of gate andinterconnect circuit delays with a speedup factor ranging from a few tens to a few hundreds, compared to SPICE.SPICE.

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Synthesis and Electrochemical Characteristics of Carbon added Li3V2(PO4)3 (탄소첨가한 Li3V2(PO4)3의 합성 및 전기화학적 특성)

  • Jo, Yeong-Im;Na, Byung-Ki
    • Journal of the Korean Electrochemical Society
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    • v.15 no.2
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    • pp.101-108
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    • 2012
  • The purpose of this study was to improve the conductivity of $Li_3V_2(PO_4){_3}$ by adding carbon source so that the discharge rate and cyclic properties were improved. Glucose and CNT were added to $Li_3V_2(PO_4){_3}$ and the structure and electrochemical properties were studied. $Li_3V_2(PO_4){_3}$, $Li_3V_2(PO_4){_3}$/C and $Li_3V_2(PO_4){_3}$/CNT were synthesised by solid state reaction using hydrogen reduction method at 600, 700, 800, $900^{\circ}C$. The cathode materials were assembled to coin cell type 2032 with Lithium metal as a counter electrode. The coin cell was galvanostatically evaluated in the voltage range of 3.0~4.8 V.

Isolation of Saccharomyces cerevisiae F38-1, a Thermotolerant Yeast for Fuel Alcohol Production at Higher Temperature (연료용 알콜의 고온생산을 위한 고온성 효모 Saccharomyces cerevisiae F38-1의 분리)

  • 김재완;진익렬;서정훈
    • Microbiology and Biotechnology Letters
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    • v.23 no.5
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    • pp.617-623
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    • 1995
  • A new thermotolerant yeast strain was siolated, and its characteristics have been studied. The strain was identified and named Saccharomyces cerevisiae F38-1. This strain could grow not only at high temperature, but also in high concentrations of sugar and ethanol. S. cerevisiae F38-1 could grow in a medium containing 50% glucose. The isolate produced ethanol at 43$\circ$C, but didn't grow at 40$\circ$C in the presence of 8% ethanol. Fermentation studies showed that the isolate ferments 20% glucose to 9.8% (V/V) ethanol at 40$\circ$C in the presence of 0.2%, yeast extract.

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Two new relationships for slip velocity and characteristic velocity in a non-center rotating column

  • Torkaman, Rezvan;Heydari, Mehran;Cheshmeh, Javad Najafi;Heydari, Ali;Asadollahzadeh, Mehdi
    • Nuclear Engineering and Technology
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    • v.54 no.8
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    • pp.2809-2818
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    • 2022
  • In this investigation work, liquid-liquid extraction (L.L.E) through three distinctive frameworks have been examined for assurance of slip velocity (S.V), and characteristic velocity (C.V) in a non-center rotating column (N.C.R.C) with a wide extend of factors. Three double frameworks with distinctive interfacial tension comprising of toluene-water (high interfacial tension), n-butyl acetate-water (medium interfacial tension), and n-butanol-water (low interfacial tension) were investigated for tests. Two common relationships for the expectation of S.V and C.V, including phase stream rates, rotor speed, column geometry additionally physical properties, are displayed. The recommended relationships were compared with test information gotten from the writing and the display examination. Findings of this study, the present proposed correlations are more accurate than those previously reported.

Object Detection Using Deep Learning Algorithm CNN

  • S. Sumahasan;Udaya Kumar Addanki;Navya Irlapati;Amulya Jonnala
    • International Journal of Computer Science & Network Security
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    • v.24 no.5
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    • pp.129-134
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    • 2024
  • Object Detection is an emerging technology in the field of Computer Vision and Image Processing that deals with detecting objects of a particular class in digital images. It has considered being one of the complicated and challenging tasks in computer vision. Earlier several machine learning-based approaches like SIFT (Scale-invariant feature transform) and HOG (Histogram of oriented gradients) are widely used to classify objects in an image. These approaches use the Support vector machine for classification. The biggest challenges with these approaches are that they are computationally intensive for use in real-time applications, and these methods do not work well with massive datasets. To overcome these challenges, we implemented a Deep Learning based approach Convolutional Neural Network (CNN) in this paper. The Proposed approach provides accurate results in detecting objects in an image by the area of object highlighted in a Bounding Box along with its accuracy.

The characteristics of D.C. switching threshold voltage for amorphous $As_{10}Ge_{15}Te_{75}$ thin film (비정질 $As_{10}Ge_{15}Te_{75}$박막의 D.C. 스위칭 임계전압 특성)

  • 이병석;이현용;이영종;정홍배
    • Electrical & Electronic Materials
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    • v.9 no.8
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    • pp.813-818
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    • 1996
  • Amorphous As$_{10}$Ge$_{15}$ Te$_{75}$ device shows the memory switching characteristics under d.c. bias. In bulk material, a-As$_{10}$Ge$_{15}$ Te$_{75}$ switching threshold voltage (V$_{th}$) is very high (above 100 volts), but in the case of thin film, V$_{th}$ decreases to a few or ten a few volts. The characteristics of V$_{th}$ depends on the physical dimensions such as the thickness of thin film and the separation between d.c. electrodes, and the annealing conditions. The switching threshold voltage decreases exponentially with increasing annealing temperature and annealing time, but increases linearly with the thickness of thin film and exponentially with increasing the separation between d.c. electrodes. The desirable low switching threshold voltage, therefore, can be obtained by the stabilization through annealing and changing physical dimensions.imensions.sions.

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Refinement of the Structure of p-Dimethylaminobenzaldehyde 4-(p-Ethoxyphenyl) Thiosemicarbazone (p-Dimethylaminobenzaldehyde 4-(p-Ethoxyphenyl) Thiosemicarbazone구조의 정밀화)

  • Seo, Il-Hwan;Seo, Chu-Myeong;Park, Yeong-Ja
    • Korean Journal of Crystallography
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    • v.2 no.1
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    • pp.12-16
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    • 1991
  • C18H22N4OS, Mr=342.47, monoclinic, P2₁/c,a=11.802(2), b=31.962(2), c=9.829(2)A, β=100.12(1)˚, V=3694.8A3,F(000)=1472, Z=8, Dx=1.246 Mg m-3, Dm=1.17Mg m-3,λ=0.71073 A, μ=0.15mm-1, T=294 K. final R=0.0856 for 3718 observed reflection (Fo>3σ(Fo)) There are two molecules in an asymmetric unit and a major difference between these molecules is in the C(9)-N(1)-C(6)-C(7) torsion angles [58.8(8)˚and 1(1)˚]. Both molecules have intramolecular N(1)-H(10)'N(3) hydrogen bonds [ 2.613(7) and 2.566(7) A] and assume V-shaped conformation with N(2) atoms at the verices. The two independent molecules are linked by the two N(2)-H(11)'S' hydrogen bonds[3.367(5) A and 3.421(4)A] and the dimergen are held together by van der Waals forces.

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Relative Stability, Ionization Potential, and Chemical Reactivity of the Neutral and Multiply Charged $C_{60}$ (중성과 다중 전하를 가진 $C_{60}$의 상대적 안정도, 이온화 에너지 및 화학 반응성)

  • Sung, Yong Kiel;Son, Man Shick
    • Journal of the Korean Chemical Society
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    • v.41 no.3
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    • pp.117-122
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    • 1997
  • On the basis of our previous paper[Bull. Korean Chem. Soc. 1995, 16, 1015], the relative stability, ionization potential, and chemical reaction of the neutral and multiply charged $C_{60}$n ions(n=3+ to 6-) have been investigated by the semi-empirical MNDO method. $C_{60}^{1-}$ has the highest stability. The ionization potential values of the $C_{60}$ ions range from 15.31 eV of $C_{60}^{2+}$ to -13.01 eV of $C_{60}^{6-}$. These values show a linear relationship according to charges. The average IP per charge is 3.15 eV from our calculations and 3.22 eV from the linear function of IP. A charge- or electron-transfer reaction of $C_{60}^{n+}$ will only occur if the ionization potential of any guest molecule is lower than the electron affinity of the host $C_{60}^{n+}$. If the energy gap between ionization potential and electron affinity, ${\Delta}_{IP-EA}$, is high, charge-transfer reactions arise by the charge-controlled effect. However, if ${\Delta}_{IP-EA}$ is low, electron-transfer reactions arise by the frontier-controlled effect.

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A Clinical Study on 106 cases of CVA (뇌혈관(腦血管) 질환(疾患) 환자(患者)에 대한 임상적(臨床的) 고찰(考察))

  • Jung, Hyun-Ji;Yoo, Jae-Yeon;Han, Chang-Ho;Shin, Dong-En;Chou, Li-Shan
    • The Journal of Internal Korean Medicine
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    • v.21 no.5
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    • pp.791-797
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    • 2000
  • Objectives : C V A(Cerebral Vascular Attack) is the severest and most important disease that makes doctors difficult in treating, also makes patients difficult to recover. I intended to research for imformations and standards of C V A patients of Sasang Constitutional Medicine through this clinical study. Methods : 106 C V A patients(61 men and 45 women) who had been inpatients from October 19, 1996 to August 19, 1999 in Conmaul Oriental Hospital were investigated and analysed the characteristics, past histories, symtoms, progress, relationship with other diseases for example DM and HTN, efficacy of oriental medical treatments. Results and Conclusions : The results of constitutional analysis showed 51 Taeumin(48.1%) 13 Soyangin(12.3%) 12 Soeumin(11.3%) 7 Taeyangin(6.6%). In the frequency of C V A, age of $60{\sim}69(43.4%)$ is major, both $50{\sim}59\;and\;70{\sim}79$ (17.9%) are next. and in pre-disease on the past, C V A is major, digestive disease and musuloskeletal disease are next. In chief complaint, kinetic disorder is major dyslogia is next. In efficacy of treatments, Slightly Improved(52.9%) is the most occupied part of that.

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As-Cast and Solidification Structures of Fe-3%C-x%Cr-y%V-w%Mo-z%W Multi- Component White Cast Irons (Fe-3%C-x%Cr-y%V-w%Mo-z%W 다합금계백주철의 주방상태 및 급냉조직)

  • Yu, sung-Kon;Shin, Sang-Woo
    • Korean Journal of Materials Research
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    • v.12 no.5
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    • pp.414-422
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    • 2002
  • Three different multi-component white cast irons alloyed with Cr, V, Mo and W were prepared in order to study their as-cast and solidification structures. Three combinations of the alloying elements were selected so as to obtain the different types of carbides and matrix structures : 3%C-10%Cr-5%Mo-5%W(alloy No.1), 3%C-10%V-5% Mo-5%W(alloy No. 2) and 3%C-17%Cr-3% V(alloy No.3). The as-cast microstructures were investigated with optical and scanning electron microscopes. There existed two different types of carbides, $M_7C_3$ carbide with rod-like morphology and $M_6C$ carbide with fishbone-like one, and matrix in the alloy No. 1. The alloy No. 2 consisted of MC carbide with chunky and flaky type and needle-like $M_2C$ carbide, and matrix. The chunky type referred to primary MC carbide and the flaky one to eutectic MC carbide. The morphology of the alloy No. 3 represented a typical hypo-eutectic high chromium white cast iron composed of rod-like $M_7C_3$ carbide which is very sensitive to heat flow direction and matrix. To clarify the solidification sequence, each iron(50g) was remelted at 1723K in an alumina crucible using a silicon carbide resistance furnace under argon atmosphere. The molten iron was cooled at the rate of 10K/min and quenched into water at several temperatures during thermal analysis. The solidification structures of the specimen were found to consist of austenite dendrite(${\gamma}$), $ ({\gamma}+ M_7C_3)$ eutectic and $({\gamma}+ M_6C)$ eutectic in the alloy No. 1, proeutectic MC, austenite dendrite(${\gamma}$), (${\gamma}$+MC) eutectic and $({\gamma}+ M_2C)$ eutectic in the alloy No. 2, and proeutectic $M_7C_3$ and $ ({\gamma}+ M_7C_3)$ eutectic in the alloy No 3. respectively.