• Korean Journal of Agricultural Science
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• v.28 no.2
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• pp.108-115
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• 2001

In this study, to propose the reasonable evaluation method of degree of consolidation considering the depth of soft ground, the two soft ground areas were chosen and analyzed for the consolidation degree. One was a western coast area in which depth of soft ground was low, and the other was a southern coast area in which depth of soft ground was deep. At the area in which depth of soft ground was low, Barron's and Yoshikuni's methods showed that the evaluation of consolidation degree was large, and it is reasonable that $C_h=C_v$ be recommended to apply the Hansbo's and the Onoue's methods. At the area in which depth of soft ground was deep, it is reasonable that $C_h=C_v$ be recommended to apply the Barron's and the Yoshikuni's methods, and $C_h=(2{\sim}3)C_v$ to apply the Hansbo's and the Onoue's methods. According to the Hansbo's and Onoue's methods, degree of consolidation proved to be applicable with measured data when using the $k_s=(1/3)k_v$ at the area which depth of soft ground was low and using the $k_s=(1{\sim}1/2)k_v$ at the area which depth of soft ground was deep. According to the Hansbo's and Onoue's methods, degree of consolidation was proved to be applicable with measured data when using ds=(3~5)dm at the area which depth of soft ground was low and using ds=2dm at the area which depth of soft ground was deep.

• Genomics & Informatics
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• v.19 no.4
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• pp.48.1-48.10
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• 2021

Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) encodes small envelope protein (E) that plays a major role in viral assembly, release, pathogenesis, and host inflammation. Previous studies demonstrated that pyrazine ring containing amiloride analogs inhibit this protein in different types of coronavirus including SARS-CoV-1 small envelope protein E (SARS-CoV-1 E). SARS-CoV-1 E has 93.42% sequence identity with SARS-CoV-2 E and shared a conserved domain NS3/small envelope protein (NS3_envE). Amiloride analog hexamethylene amiloride (HMA) can inhibit SARS-CoV-1 E. Therefore, we performed molecular docking and dynamics simulations to explore whether amiloride analogs are effective in inhibiting SARS-CoV-2 E. To do so, SARS-CoV-1 E and SARS-CoV-2 E proteins were taken as receptors while HMA and 3-amino-5-(azepan-1-yl)-N-(diaminomethylidene)-6-pyrimidin-5-ylpyrazine-2-carboxamide (3A5NP2C) were selected as ligands. Molecular docking simulation showed higher binding affinity scores of HMA and 3A5NP2C for SARS-CoV-2 E than SARS-CoV-1 E. Moreover, HMA and 3A5NP2C engaged more amino acids in SARS-CoV-2 E. Molecular dynamics simulation for 1 ㎲ (1,000 ns) revealed that these ligands could alter the native structure of the proteins and their flexibility. Our study suggests that suitable amiloride analogs might yield a prospective drug against coronavirus disease 2019.

• Journal of Auto-vehicle Safety Association
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• v.15 no.4
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• pp.65-70
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• 2023

In the paper, we propose a design method and process of a hybrid V2X communication module that combines WAVE communication, LTE-V2X communication, and legacy LTE communication in evaluating vehicle V2X electromagnetic compatibility. C-ITS is suitable for safety service applications due to its low latency, and legacy LTE is suitable for applications such as traffic information and infotainment due to its high latency and high capacity. In order to evaluate the V2X communication system, the evaluation equipment must have communication performance of the same level or higher. The main design contents presented in this paper will be applied to the implementation of a hybrid V2X communication module for electromagnetic compatibility evaluation.

• Magazine of the Korean Society of Agricultural Engineers
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• v.11 no.3
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• pp.1770-1771
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• 1969

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.213-217
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• 1996

HgS and HgS: Co crystals and films grown by the slow cooling and the chemical bath deposition method were used to measure their crystal structure and their optical absorption spectra. HgS and HgS: Co crystals are hexagonal structure with the lattice constant $a_0=4.155{\AA}$, $c_0=9.505{\AA}$ for HgS and $a_0=4.148{\AA}$, $c_0=9.462{\AA}$ for HgS and $a_0=4.135{\AA}$, $c_0=9.442{\AA}$ for HgS: Co, respectively. The optical energy gap of these crystals are given as 2.040 eV for HgS and 1.900 eV for HgS: Co, and the optical energy gap of these films were 2.440 eV for HgS and 1.940 eV for HgS: Co at room temperature, respectively.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.21-27
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• 1998

Electrical and optical characteristics of ZnS:Mn/ZnS:Tb multilayer TFEL devices were investigated for multi-color electroluminescent display applications. Emission spectra of M $n^{2+}$ and T $b^{3+}$ ions were observed from ZnS:Mn/ZnS:Tb multi-layer TFEL devices, and were very broad from 540 nm to 640 nm. Saturation luminance measured at 155 V was 1025 Cd/$m^2$. C-V, $Q_{t}$ - $V_{p}$ curves showed that the phosphor capacitance ( $C_{p}$ ) and the insulator capacitance ( $C_{i}$ ) were 13.5nF/$\textrm{cm}^2$ and 60 nF/$\textrm{cm}^2$, respectively. Threshold voltage( $V_{thl}$) was shown to decrease from 126 V to 93 V due to the increase of the applied voltage from 155 V to 185 V, which was attributed to the increase of the polarization charge. The equation for the calculation of the threshold voltage as a function of the applied voltage was proposed for the first time. The calculated threshold voltage agreed well with the data obtained from the measurement.t.t.t.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.202-208
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• 1997

Bi-layered SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si sibstrates by rf magnetron sputt-ering at room temperature and then were annealed at 75$0^{\circ}C$, 80$0^{\circ}C$ and 85$0^{\circ}C$ for 1 hour in oxygen at-mosphere. The film composition of SrBi2Ta2O9 was obtained after depositing at room temperature and annealing at 80$0^{\circ}C$. Excess 20mole% Bi2O3 and 30 mole% SrCO3 were added to the target to compensate for the lack of Bi and Sr in SBT film. 200 nm thick SBT film exhibited and dense microstructure, adielectric constant of 210, and a dissipation factor of 0.05 at 1 MHz frequency. The films exhibited Curie temperature of 32$0^{\circ}C$ and a dielectric constant of 314 at that temperature under 100 kHz frequency. The remanent polarization(2Pr) and the coercive field(2Ec) of the SBT films were 9.1 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm at an applied voltage of 3V, resspectively and the SBT film showed a fatigue-free characteristics up to 1010 cy-cles under 5V bipolar pulse. The leakage current density of the SBT film was about 7$\times$10-7A/$\textrm{cm}^2$ at 150 kV/cm. Fatigue-free SBT films prepared by rf magnetron sputtering can be suitable for application to non-volatile memory device.

• Korean Journal of Mathematics
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• v.18 no.4
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• pp.335-342
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• 2010

Let D be an integral domain with quotient field K,$\mathcal{I}(D)$ be the set of nonzero ideals of D, and $w$ be the star-operation on D defined by $I_w=\{x{\in}K{\mid}xJ{\subseteq}I$ for some $J{\in}\mathcal{I}(D)$ such that J is finitely generated and $J^{-1}=D\}$. The D is called a Pr$\ddot{u}$fer $v$-multiplication domain if $(II^{-1})_w=D$ for all nonzero finitely generated ideals I of D. In this paper, we show that D is a Pr$\ddot{u}$fer $v$-multiplication domain if and only if $(A{\cap}(B+C))_w=((A{\cap}B)+(A{\cap}C))_w$ for all $A,B,C{\in}\mathcal{I}(D)$, if and only if $(A(B{\cap}C))_w=(AB{\cap}AC)_w$ for all $A,B,C{\in}\mathcal{I}(D)$, if and only if $((A+B)(A{\cap}B))_w=(AB)_w$ for all $A,B{\in}\mathcal{I}(D)$, if and only if $((A+B):C)_w=((A:C)+(B:C))_w$ for all $A,B,C{\in}\mathcal{I}(D)$ with C finitely generated, if and only if $((a:b)+(b:a))_w=D$ for all nonzero $a,b{\in}D$, if and only if $(A:(B{\cap}C))_w=((A:B)+(A:C))_w$ for all $A,B,C{\in}\mathcal{I}(D)$ with B, C finitely generated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.551-554
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• 2000

The stability of $Pr_6$$O_{11}$-based ZnO varistors doped with $Y_2$$O_3$ was investigated under various d.c. stresses. The varistors were sintered at $1350^{\circ}C$ for 1h in the addition range of 0.0 to 4.0 mol% $Y_2$$O_3$. The varistors doped with $Y_2$$O_3$ exhibited much higher nonlinearity than that without $Y_2$$O_3$. In Particular, the varistors containing 0.5 mol% $Y_2$$O_3$ showed very excellent V-I characteristics, which the nonlinear exponent was 51.19 and the leakage current was 1.32 $\mu\textrm{A}$. And these varistors also showed an excellent stability, which the variation rate of the varistor voltage and the nonlinear exponent were -0.80% and -2.17%, respectively, under 4th d.c. stress, such as (0.80 $V_ {1mA}$/$90^{\circ}C$/12h)+(0.85 $V_{1mA}$/$115^{\circ}C$/12h)+(0.90 $V_{1mA}$/$120^{\circ}C$/12h)+(0.95 $V_{1mA}$/$125^{\circ}C$/12h). Consequently, since $Pr_ 6$$O_{11}$-based ZnO varistors doped with 0.5 mol% $Y_2$$O_3$ have an excellent stability as well as good nonlinearity, it is expected to be usefully used to develop the superior varistors in future.

• Journal of Korea Society of Industrial Information Systems
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• v.12 no.2
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• pp.79-84
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• 2007

This papar reports design and fabrication of CMOS temperature control circuit using MOSIS 0.25um-3.3V CMOS technology. The proposed circuit has a temperature coefficient of $13mV/^{\circ}C$ for a wide operating temperature range with a good linearity. Furthermore, the temperature coefficient of output voltage can be controlled by adjusting external bias voltage. This circuit my be applicable to the design of one-chip IC where quartz crystal resonator is mounted on CMOS oscillator chips.