• 센서학회지
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• 제18권3호
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• pp.222-225
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• 2009

This paper describes the fabrication and characteristics of Schottky micro hydrogen sensors for high temperatures by using polycrystalline(poly) 3C-SiC thin films grown on Si substrates with thermal oxide layer using APCVD. Pd/poly 3C-SiC Schottky diodes were made and evaluated by I-V and C-V measurements. Electric current density and barrier height voltage were $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices could operate stably at about 400 $^{\circ}$. The characteristics of implemented sensors have been investigated in terms of sensitivity, linearity of response, response rate, and response time. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature $H_2$ sensor applications.

• 정보처리학회논문지B
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• 제15B권6호
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• pp.609-612
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• 2008

G = (V, E) 를 단순 무방향성 그래프라 하자. Minimum Vertex Cover (MVC) 문제는 C 를 V 의 부분 집합이라 할 때 모든 간선들이 C 내의 최소 한 개 정점과 인접하게 되는 최소 집합 C 를 계산하는 것이다. 다른 많은 그래프 이론 문제와 마찬가지로 본 문제도 NP-hard 문제임이 증명되었다. 본 논문에서는 MVC 문제를 위한 LeafGA 라는 새로운 유전 알고리즘을 제시하며 또한 제시된 알고리즘을 널리 알려 진 기준 그래프들에 적용함으로써 그 효용성을 보인다.

• 한국수산과학회지
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• 제19권2호
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• pp.118-126
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• 1986

1985년 7월에서 10월 사이에 부산연안지역에서 수집한 해수, 낙지, 피조개, 게, 우렁쉥이 등 70종의 시료에서 Vibrio vulnificus의 검출률과 시료에서 분리된 균의 세균학적 특성을 조사한 결과는 다음과 같다. 1. Vibrio vulnificus의 월별 검출률은 수온이 높은 8월에 $19.2\%$로 가장 높았으며 7월에 $7.7\%$ 10월에 $5.5\%$로 수온과 비례하여 나타났으며 7월과 10月 사이의 평균검출률은 $11.4\%$였다. 시료별 검출률은 서식해역의 오염도가 높고 오염된 해수와의 접촉부위가 많은 피조개와 게에서 $20\%$로 가장 높았으며 낙지 해수의 순으로 나타났다. 2. 시료에서 분리된 균과 환자에게 분리된 균의 생화학적인 차이점은 없었으며, 분리된 본균이 다른 Vibrio균과 구별될 수 있는 생화학적 특징은 ONPG 가수분해양성, lactose 분해양성, 식염내성이 $7\%$이하인 점이다. 3. 이균의 최적배양조건은 pH 8.0, 온도 $35^{\circ}C$부근이었으며, 배양온도별 비증식속도와 평균세대시간은 $35^{\circ}C$진탕배양에서 $1.21\;hr^{-1}$, 34min으로 가장 빨랐으며 $35^{\circ}C$ 정치배양, $40^{\circ}C$ 정치배양, $25^{\circ}C$ 진탕배양 $25^{\circ}C$ 정치배양의 순이었다. 4. 이 균은 장내세균분리용배지인 EMB, SS, DC 한천배지에서는 증식하지 못했으며 MC 한천배지상에서의 집낙의 특징은 적색 혹은 무색으로 나타났고 Endo 한천배지상에서는 적색, TCBS 한천배지상에서는 녹색집낙으로 나타났다. 5. 이 균을 $4^{\circ}C$에 냉장하였을 경우 매 16시간마다 약 1 log cycle씩 감소하였으며 $-18^{\circ}C$에 동결하였을 때는 거의 다 사멸하였다.

• 한국진공학회지
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• 제6권1호
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• pp.36-43
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• 1997

Pt/Ti/$SiO_2$/Si 기판상에 고주파 마그네트론 스퍼터링 방식으로 PZT 박막[두께:3000 $\AA$]을 증착하고 RTA방식으로 후속 열처리[열처리온도:$550^{\circ}C$~$650^{\circ}C$, 열처리 시간:10초~50 초]를 실시하여 직경 0.2mm소자의 FECAPs(ferroelectric capacitors)를 제작하였다. 제작된 커패시터의 유전상수($\varepsilon_r$)와 잔류분극($2P_r$)은 $650^{\circ}C$로 30초간 열처리한 시편에서 $\varepsilon_r$ (1kHz)=690, 2Pr(-5V~5V sweep)=22$\muC/\textrm{cm}^2$로 가장 높게 나타났으며 유전정접(tan $\delta$)과 누설전류(Jl)는 $600^{\circ}C$에서 30초간 열처리한 시편에서 $tan\delta(\ge10kHz)\le0.02, \; J_i(5V)=3\mu\textrm{A}/\textrm{cm}^2$로 가장 낮게 나타났다.

• 전자공학회논문지C
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• 제34C권9호
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• pp.1-9
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• 1997

Novel class A CMOS second-generation current conveyors (CCII) using 0.6.mu.m n-well standard CMOS process for high-frequency current-mode signal processing were developed. The CCII consists of a regulated current-cell for the voltage input and a cascode current mirror for the current output. In this architecture, the two input stages are coupled by current mirrors to reduce the current input impedance. Measurements of the fabricated cCII show that the current input impedance is 308 .ohm. and the 3-dB cutoff frequency when used as a voltage amplifier extends beyond 10MHz. The linear dynamic ranges of voltage and current are from -0.5V to 1.5V and from -100.mu.A to +120.mu.A for supply voltage V$\_$DD/ = -V$\_$SS/=2.5V, respectively. The power dissipation is 2 mW and the active chip area is 0.2 * 0.2 [mm$\^$2/].

• Journal of Electrochemical Science and Technology
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• 제3권4호
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• pp.185-189
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• 2012

A.c. impedances of mechanically polished CP-Ti specimens were measured at open-circuit potential (OCP) with immersion time and under applied anodic potentials between -0.2 and 1 $V_{Ag/AgCl}$ in 0.1 M NaOH solution. Capacitances of native oxide films ($C_{ox,na}$) grown naturally and capacitances of anodic oxide films ($C_{ox,an}$) formed under applied anodic potentials were obtained to examine the growth of native and anodic oxide films in 0.1 M NaOH solution and how to use $C_{ox,na}$ for the surface area measurement of Ti specimen. $1/C_{ox,na}$ and $1/C_{ox,an}$ appeared to be linearly proportional to OCP and applied potential ($E_{app}$), with proportional constants of 0.086 and 0.051 $uF^{-1}\;V^{-1}$, respectively. The $C_{ox,na}$ also appeared to be linearly proportional to geometric surface area of the mechanically polished CP-Ti fixture specimen, with proportional constants of 11.3 and $8.5{\mu}F\;cm^{-2}$ at -0.45 $V_{Ag/AgCl}$ and -0.25 $V_{Ag/AgCl}$ of OCPs, respectively, in 0.1 M NaOH solution. This linear relationship between $C_{ox,na}$ and surface area is suggested to be applicable for the measurement of real surface area of Ti specimen.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1991년도 춘계연구발표회 논문개요집
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• pp.73-74
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• 1991

The films with ferromagnetic fine particles dispersed in nonmagnetic matrix, such as $Fe-Al_2O_3$ and Fe-Cu have been studied for use of magnetic recording medium, optically device and sensor. Their magnetic properties depend strongly on structural parameter such as size and volume fraction of ferromagnetic particles. Fe-Cr-Ni alloy sputtered films also have microstructure with ferromagnetic -- b.c.c phase and nonmagnetic f.c.c phase grains. Magnetic properties of these films depend strongly on such a unique structure. These are depend on the ratio in volume of ferromagnetic particles to nonmagnetic ones $V_F/V_N$, the saturation magnetization Ms increased with increase of $V_F/V_N$. The coercivity Hc of the as-deposited films took maximum value of about 200 Oe at adequate $V_F/V_N$ and then Ms and Squareness S were 500 emu/cc and 0.5, respectively.(omitted)

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.293-296
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• 2016

Using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements, the electrical properties of Cu/n-InP Schottky diodes were investigated. The values of C and G/ω were found to decrease with increasing frequency. The presence of interface states might cause excess capacitance, leading to frequency dispersion. The negative capacitance was observed under a forward bias voltage, which may be due to contact injection, interface states or minority-carrier injection. The barrier heights from C-V measurements were found to depend on the frequency. In particular, the barrier height at 200 kHz was found to be 0.65 eV, which was similar to the flat band barrier height of 0.66 eV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.148-148
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• 2010

Measuring the a-IGZO TFTs with various temperatures was found to induce a threshold voltage shift and a change of the subthreshold gate voltage swing. Characteristic change is dependant on a material of the substrate at the temperature from $20^{\circ}C$ to $100^{\circ}C$. The threshold voltage was shifted to the left from -2.7V to -61V on SiO2/galss. But, as the temperature increases form $20^{\circ}C$ to $100^{\circ}C$. the threshold voltage was shifted to the right from 0.85V to 2.45V.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1341-1343
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• 1995

The maximum transmission voltage in our country is going to change 345kV into 765kV owing to the increase of Electrical Power Demand and power System Stability. Our company is developing 800kV GIS and 765kV Transformer which are main equipments in 765kV substation. This paper describs the specification on 800kV GIS which we prepared for 800kV 8,000A 50kA GIS development. This specification is supported by Public Standards and Data. And, we are designing the 800kV GIS on this specification and drawing up the 800kV GIS layout for type test.