• 전자공학회논문지
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• 제52권4호
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• pp.56-61
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• 2015

고주파에서 이상적인 커패시턴스-전압 곡선과 결함이 존재하여 늘어진 커패시턴스-전압 곡선을 SiGe p-FinFET 시뮬레이션을 이용하여 보였다. 두 곡선이 게이트 전압 축으로 늘어진 전압 차이를 이용하여 평균적인 계면 결함 밀도를 구할 수 있었다. 또한 같은 특성을 이용하는 Terman의 방법으로 에너지에 따른 계면 결함 밀도를 추출하고, 동일한 에너지 구간에서 평균값을 구하였다. 전압 차이로 구한 평균 계면 결함 밀도를 Terman의 방법으로 구한 평균값과 비교하여, 두 방법의 결과가 거의 비슷한 평균 계면 결함 밀도를 나타낸다는 것을 검증하였다.

• 대한예방의학회:학술대회논문집
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• 대한예방의학회 1994년도 교수 연수회(역학)
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• pp.150-153
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• 1994

Receiver operating characteristic (ROC) curves have been frequently used to compare probability models applied to medical problems. Though the curves are a measure of the discriminatory power of a model. they do not reflect the model's accuracy. A supplementary accuracy curve is derived which will be coincident with the ROC curve if the model is reliable. will be above the ROC curve if the model's probabilities are too high or below if they are too low. A clinical example of this new graphical presentation is given.

• 한국재료학회지
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• 제15권2호
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• pp.139-142
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• 2005

[ $ZrO_2$ ] gate dielectric thin films were deposited by radio frequency (rf)-magnetron sputtering and its structure, surface morphology and electrical peoperties were studied. As the oxygen flow rate increases, the surface becomes smoother. The experimental results indicate that a high temperature annealing is desirable since it improves the electrical properties of the $ZrO_2$ gate dielectric thin films by decreasing the number of interfacial traps at the $ZrO_2/Si$ interface. The carrier transport mechanism is dominated by the thermionic emission.

• Journal of Magnetics
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• 제14권1호
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• pp.11-14
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• 2009

We investigated the I-V curves and differential tunneling conductance of two, CoFeB/MgO/CoFeB-based, magnetic tunnel junctions (MTJs): one with a low tunneling magnetoresistance (TMR; 22%) and the other with a high TMR (352%). This huge TMR difference was achieved by different MgO sputter conditions rather than by different annealing or deposition temperature. In addition to the TMR difference, the junction resistances were much higher in the low-TMR MTJ than in the high-TMR MTJ. The low-TMR MTJ showed a clear parabolic behavior in the dI/dV-V curve. This high resistance and parabolic behavior were well explained by the Simmons' simple barrier model. However, the tunneling properties of the high-TMR MTJ could not be explained by this model. The characteristic tunneling properties of the high-TMR MTJ were a relatively low junction resistance, a linear relation in the I-V curve, and conduction dips in the differential tunneling conductance. We explained these features by applying the coherent tunneling model.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2016년도 추계학술대회
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• pp.527-530
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• 2016

본 논문에서는 $0.35-{\mu}m$ standard CMOS 공정에서 낮은 전력을 소모하면서 낮은 전원전압에서 동작하는 곡률보상 기능을 갖는 기준전류/전압 발생 회로를 제안한다. 제안된 회로는 weak-inversion 영역에서 동작하는 MOS 트랜지스터들을 사용함으로써 1V 이하 전원전압에서 동작할 수 있다. 시뮬레이션 결과는 제안되는 곡률보상 기술을 사용하여 기존의 곡률보상 기능이 없는 BGR 회로들처럼 종 모양이 아닌 사인 곡선과 같은 모양을 나타내 작은 TC 값을 보여준다. 제안된 회로들은 모두 0.9V의 전원전압에서 동작한다. 먼저, 기준전압 발생 회로는 176nW 전력을 소모하며, 온도 계수는 $26.4ppm/^{\circ}C$이다. 기준전류 발생 회로는 194.3nW 전력을 소모하며, 온도 계수는 $13.3ppm/^{\circ}C$이다.

• 센서학회지
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• 제4권4호
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• pp.75-80
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• 1995

금속 alkoxide를 출발물질로 PZT-PNN 3성분계 압전박막을 제작하여, 박막의 결정성과 전기적 특성을 평가하였다. 박막의 X-RD 분석결과 $550^{\circ}C$ 소결온도에서 결정성이 가장 양호하였다. D-E 이력곡선의 관측 결과 항전계는 28.8 kV/cm, 잔유분극은 $18.3\;{\mu}C/cm^{2}$ 이었다. 박막의 진성파괴전압은 $76.0\;{\sim}\;27.0\;MV/m$이었고, 소결온도가 상승함에 따라 특성이 저하되었다. 박막의 비유전율은 조성비에 따라 (50:40:10)은 406, (50:30:20)은 1084, (45:35:20)은 723, (40:40:20)은 316이었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1462-1464
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• 1998

Poly-Si TFT(Thin Film Transistor) is a electronic device that can be applied to the field of large area electronics such as AMLCD. We have fabricated the poly-Si TFT with lateral body terminal that is counter-doped body electrode and investigated the electrical characteristics of it. The lateral body terminal being short with s terminal, we have measured the transfer charac (Vg-ld) and the output characteristic (Vd-ld) fabricated devices. The measured result showe only that leakage current in OFF-state was re and Kink effect in ON-state was suppressed bu that in output characteristic curve the output Id was sustained constantly with the output v Vd in the saturation region.

• Journal of the Optical Society of Korea
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• 제14권4호
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• pp.321-325
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• 2010

We analyze the current density - voltage (J - V) curve of a Cu(In,Ga)$Se_2$ (CIGS) thin-film solar cell measured at different irradiation power densities. For the solar-cell sample investigated in this study, the fill factor and power conversion efficiency decreased as the irradiation power density (IPD) increased in the range of 2 to 5 sun. Characteristic parameters of solar cell including the series resistance ($r_s$), the shunt resistance ($r_{sh}$), the photocurrent density ($J_L$), the saturation current density ($J_s$) of an ideal diode, and the coefficient ($C_s$) of the diode current due to electron-hole recombination via ionized traps at the p-n interface are determined from a theoretical fit to the experimental data of the J - V curve using a two-diode model. As IPD increased, both $r_s$ and $r_{sh}$ decreased, but $C_s$ increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.86-89
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• 2003

SBT thin film for semiconductor device that is made by RF magnetron sputtering method studied electrical properties under various temperature condition. Dielectric constant who differ annealing condition appears highest in $750[^{\circ}C]$ and it is 213. Also, C-V properties by annealing temperature of SBT thin film for semiconductor device is no change almost to $600[^{\circ}C]$ and shows non-linear butterfly shape more than $650[^{\circ}C]$ Maximum capacitance and difference of smallest capacitance show the biggest difference in $750[^{\circ}C]$ as degree that domain wall motion contributes in ferrelectric polarization value in C-V characteristic curve of ferroelectric that this shows typical ferroelectric properties. Therefore, SBT thin film for semiconductor device that is annealing in $750[^{\circ}C]$ expressed the most superior electrical and ferroelectric properties.

• 대한전자공학회논문지
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• 제25권11호
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• pp.1329-1334
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• 1988

$NH_3-O_2$의 열반응에 의해 산화막을 성장시키는 새로운 방법을 소개하고, 기존의 건식산화방법을 이용한 $SiO_2$박막의 특성을 비교 설명하였다. $NH_3$의 유량에 따라서 박막의 성장비가 증가하고, 성장된 막의 구성성분이 건식산화때와 같음을 확인하였다. C-V특성곡선에서도 $Q_{OX}$와 $Q_{SS}$가 거의같았고 히스테리시스현상도 없었다. 또한 n-MOS트랜지스터를 제작하고 측정한 결과 $I_D$-$V_{DS}$특성곡선이 건식산화와 비교하여 우수함을 확인했다.