• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1045-1048
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• 2003

In this paper, we studied plasma damage of MIS capacitor with $Al_2$O$_3$ dielectric film. Using capacitor pattern with the same area but different perimeters, we tried to separate etching damage mechanism and to optimize the dry etching process. After etching both metal and dielectric layer by the same condition, leakage current and C-V measurements were carried out for Pt/A1$_2$O$_3$/Si structures. The flatband voltage shift was appeared in the C-V plot, and it was caused by the variation of the fixed interface charge and the interface trapped charge. From I-V measurement, it was found the leakage current along the periphery could not be ignored. Finally, we established the process condition of RF power 300W, 100mTorr, Ar/Cl$_2$ gas 60sccm as an optimal etching condition.

• Bulletin of the Korean Chemical Society
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• 제26권12호
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• pp.1981-1985
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• 2005

Kinetic studies have been performed for alkaline hydrolysis of a series of [(methoxy)(p-substituted styryl)carbene]pentacarbonyl chromium(0) complexes ($(CO)_5$Cr=$C(OCH_3)CH=CHC_6H_4X$, X = p-$OCH_3$, p-$CH_3$, H, p-Cl, p-$NO_2$). Second-order rate constants $(k_{{OH}^-})$ for the alkaline hydrolysis in 50% acetonitrile-water(v/v) were determined spectrophotometrically at various temperatures. At a low pH region (pH < 7.5), the observed rate constant $(k_{obs})$ remained constant with a small value, while in a high pH region (pH > 9.5), $k_{obs}$ increases linearly with increasing the pH of the medium. The second-order rate constants $(k_{{OH}^-})$ increase as the substituent X changes from a strong electron donating group to a strong electron withdrawing group. The Hammett plot obtained for the alkaline hydrolysis is consisted of two intersecting straight lines. The nonlinear Hammett plot might be interpreted as a change in the rate-determining step. However, the fact that the corresponding Yukawa-Tsuno plot is linear with $\rho$ and r values of 0.71 and 1.14, respectively indicates that the nonlinear Hammett plot is not due to a change in the rate-determing step but is due to ground-state stabilization through resonance interaction. The positive $\rho$ value suggests that nucleophilic attack by $OH^-$ to form a tetrahedral addition intermediate is the rate-determining step. The large negative ${\Delta}S^\neq$ value determined in the present system is consistent with the proposed mechanism.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권2호
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• pp.55-58
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• 2003

This paper examines the electrical characteristic of single oxide layer due to various diffusion conditions, substrate orientations, substrate resistivity and gas atmosphere in a diffusion furnace. The oxide quality was examined through the capacitance-voltage characteristic due to the annealing time after oxidation process, and the capacitance-voltage characteristics of the single oxide layer by will be described via semiconductor device simulation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2091-2093
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• 2005

Five model coils of 6.6kV motor were manufactured with several defects. These stator coils have artificial defects such as void of groundwall insulation, removal of semi-conductive coating and damage of strand insulation. Epoxy-mica coupler(80 pF) was connected to five model coil terminals, respectively The voltage applied to the coils was 3.81kV, 4.76kV, 6.0kV and 6.6kV. Partial discharge(PD) tests performed in the laboratory and shield room. Digital PD detector (PDD) and turbine generator analyzer(TGA) were used to measure PD activity. TGA summarizes each plot with two quantities such as the normalized quantity number(NQN) and the peak PD magnitude(Qm). The PD levels in pC were measured with PDD. PD patterns of model coils were indicated the internal and slot discharges. PD patterns coincide with both PDD and TGA.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1824-1827
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• 2003

During normal machine operation, partial discharge(PD) measurements were performed with turbine generator analyzer(TGA) in two high voltage motors. Two 6.6kV motors were installed with 80pF capacitive couplers at the terminal box. The PD patterns were displayed two dimensional and three dimensional. TGA summarizes each plot with two quantifies such as the normalized quantity number(NQN) and the peak PD magnitude(Qm). Off-line PD measurements were conducted on one 4.16kV motor. The motor was energized to 2.4kV, 3.0kV, 3.5kV and 4.16kV, respectively. The PD levels in pC were measured with a conventional digital PD detector. The comparison of positive to negative PD indicates whether the defect elements of PD are within the insulation or on the insulation surface. Discharge at conductor surface was discovered in No. 1 motor. Internal discharges were generated in phase A, B and C of No. 2 motor, Slot discharges occurred in three phases of No. 3 motor.

• 한국진공학회지
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• 제7권s1호
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• pp.134-139
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• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• 한국전기전자재료학회논문지
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• 제23권8호
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.193-196
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• 2005

유기발광소자의 발광층의 두께에 따른 임피던스의 변화를 살펴보았다. 임피던스는 두께에 따라 저항의 변화에 따른 의존성을 보이며, 그에 따른 임피던스와 Cole-Cole 반원의 변화, 두께에 따른 $1/\tau$ 의 변화를 살펴보았다. 발광층의 두께는 각각 100, 200, 300 nm의 두께로 열증착하여 실험하였고, 소자의 구조는 $ITO/Alq_3/Al$의 구조로 측정 하였다. 유기발광소자의 발광층인 $Alq_3$의 두께가 증가함에 따라 임피던스의 크기가 증가하고, 위상각의 크기는 100nm의 경우 0V에서 용량성을 보이다가 6~10V까지 부성저항특성을 나타낸 후 약 22V에서 저항성을 나타내고, 200과 300 nm의 경우 12V까지 용량성을 나타내다 이후 22V 근방에서 $0^{\circ}$에 가까워지며 저항성을 나타내는 것을 알 수 있었다. 또한 두께에 따른 Cole-Cole 반원을 살펴보면 두께가 증가할수록 반원의 크기가 증가하는 것을 알 수 있으며, 이를 통해 간단한 등가회로를 예측할 수 있었다. 그리고 벌크내의 용량성$(C_p)$을 측정하여 두께의 증가에 따라 $C_p$ 값이 감소하는 것을 알 수 있었다.

• 한국농공학회지
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• 제13권1호
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• pp.2158-2161
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• 1971

1969년도(年度) 10월(月) 20일(日) 표류(表類) 2종류(種類)를 파종하고 1970년(年) 6월(月) 15일(日) 수확(收穫)을 이앙하고 본(本) 삼차시험사업(三次試驗事業)으로 하는 이유(理由)는 예산관계(豫算關係)와 제반사정(諸般事情)이 여의(如意)치 못해서 수도(水稻)에 대(對)한 조사연구(調査硏究)는 제사차(第四次) 사업(事業)에서 다루기로 한다.

• Journal of Electrochemical Science and Technology
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• 제10권2호
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• pp.159-169
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• 2019

The activated carbon materials were prepared from waste biomass by ultrasonic assisted chemical activation method (UCA), ultrasonic assisted physical activation method (UPA) and Manganese nitrogen doped carbon (Mn/N-C). The XRD result shows the turbostatic (fully disordered) structure. The cyclic voltammetry test was done at 50 mV/s using 1M sodium sulfate and the values of specific capacitance were found to be 93, 100 and 115 F/g for UCA, UPA and Mn/N-C respectively. The power density values for the samples UCA, UPA and Mn/N-C were found to be 46.04, 87.97 and 131.42 W/kg respectively. The electrochemical impedance spectroscopy was done at low frequency between 1 to 10 kHz. The Nyquist plot gives the resistant characteristics of the materials due to diffusional resistance at the electrode-electrolyte interface. The Energy Dispersive X-Ray Spectroscopyanalysis (EDAX) analysis showed that the percentage doping of nitrogen and manganese were 3.53 wt% and 9.44 wt% respectively. It is observed from the experiment Mn/N-C doped carbon show good physical and electrochemical properties.