• Korean Journal of Materials Research
• /
• v.1 no.3
• /
• pp.125-131
• /
• 1991

Boron penetration phenomenon of $p^{+}$ silicon gate with as-deposited amorphous or polycrystalline Si upon high temperature annealing was investigated using high frequency C-V (Capacitance-Volt-age) analysis, CCST(Constant Current Stress Test), TEM(Transmission Electron Microscopy) and SIMS(Secondary Ion Mass Spectroscopy), C-V analysis showed that an as-deposited amorphous Si gate resulted in smaller positive shifts in flatband voltage compared wish a polycrystalline Si gate, thus giving 60-80 percent higher charge-to-breakdown of gate oxides. The reduced boron penetration of amorphous Si gate may be attributed to the fewer grain boundaries available for boron diffusion into the gate oxide and the shallower projected range of $BF_2$ implantation. The relation between electron trapping rate and flatband voltage shift was also discussed.

• Electrical & Electronic Materials
• /
• v.10 no.7
• /
• pp.692-699
• /
• 1997

The silicon doped $Al_{0.33}$G $a_{0.67}$As were grown by molecular beam epitaxy. The electroreflectance(ER) spectra of Schottky barrier Au/n-Al/suu x/G $a_{1-x}$ As have been measured at various modulation voltage( $V_{ac}$ ) and dc bias voltage( $V_{bias}$). From the observed Franz-Keldysh oscillations(FKO) peak, the band gap energy of the $Al_{x}$G $a_{1-x}$ As is 1.91 eV which corresponds to an Al composition of 33%. The internal electric field( $E_{i}$)of this sample is 2.96$\times$10$^{5}$ V/cm. As the modulation voltage( $V_{ac}$ ) is changed, the line shape of ER signal does not change but its amplitude varies linearly. The amplitude as a function of modulation voltage has saturated at 0.8 V. The internal electric field has decreased from 6.47$\times$10$^{5}$ V/cm to 2.00$\times$10$^{5}$ V/cm as the dc bias voltage( $V_{bias}$) increases from -3.5 V to +0.8 V. The values of built-in voltage( $V_{bi}$ ) and carrier concentration(N) determined from the plot of $V_{bias}$ from the plot of $V_{bias}$ versus $E_{i}$$^{2}$ are 0.855 V and 3.83$\times$10$^{17}$ c $m^{-3}$ , respectively.ively.y.y.y.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1381_1382
• /
• 2009

Nondestructive tests were performed on two 4.16kV motors. Epoxy-mica coupler(80pF) was connected to 4.16 kV motor stator windings. The voltage applied to the stator windings was 2.4 kV, 3.0kV, 3.5kV and 4.16kV, respectively. Digital partial discharge detector(PDD) and turbine generator analyzer(TGA) were used to measure partial discharge(PD) activity. TGA summarizes each plot with two quantities such as the normalized quantity number(NQN) and the peak PD magnitude(Qm). The PD levels in pC were measured with PDD. PD patterns of stator windings were indicated the internal discharge. PD patterns are consistent with the result of measurement using PDD and TGA.

• Analytical Science and Technology
• /
• v.8 no.4
• /
• pp.807-814
• /
• 1995

Accurate measurements of ozone precursors are required to understand the process and extent of ozone formation in rural and urban areas. Nonmethane hydrocarbons (NMHCs) have been identified as important ozone precursors. Identification and quantification of NMHCs are difficult because of the large number present and the wide molecular weight range encountered in typical air samples. A major plan of the research team of the Climate and Air Quality Taiwan Station (CATs) was the measurement of atmospheric nonmethane hydrocarbons. An analytical method has been development for the analysis of the individual nonmethane hydrocarbons in ambient air at ppb (v) and subppb(v) levels. The whole ambient air samples were collected in canisters and analyzed by GC-FID with $Al_2O_3$/KCl PLOT column. Our targeted for quantitative analysis 43 compounds that may be substantial contributors to ozone formation. The retention indices and molar response factors of some commercially available $C_2{\sim}C_{10}$ hydrocarbons were determined and used to identify and quantify air samples. A quality assurance program was instituted to ensure that good measurements were made by participating in the International Nonmethane Hydrocarbon Intercomparison Experiments (NOMHICE).

• Korean journal of applied entomology
• /
• v.57 no.4
• /
• pp.361-372
• /
• 2018

Migratory insect pest populations migrate from the southern China to Korea through jet streams. In Korea, 5 major migratory insect species are important, i.e. Nilaparvata lugens, Sogatella furcifera, Laodelphax striatellus, Cnaphalocrocis medinalis and Mythimma separate, which are damages to the major crops, rice. This study was conducted from late July 2016 to early September 2016 and from July 2017 to August 2017 in rice paddy of Jeolla-province. C. medinalis and M. separata collected using pheromone traps, while N. lugens, S. furcifera and L. striatellus collected using 3 methods (visual surveys, sweeping surveys, sticky traps). SADIE (Spatial Analysis by Distance IndicEs) among geostatistics was used to analyze migratory insect pests. SADIE was used to analyze spatial distribution and index of aggregation $I_a$, index of clustering $V_i$, $V_j$ were used to investigate the spatial distribution. Also, the clustering indices were mapped as red-blue plot. C. medinalis and M. separata showed different distribution based on SADIE spatial aggregation analysis and red-blue plot analysis. Initial spatial distributions of L. striatellus and other planthoppers were differed for sampling location and time.

• Journal of the Korean Ceramic Society
• /
• v.40 no.7
• /
• pp.615-619
• /
• 2003

Temperature and frequency dependence of dielectric and electrical properties was investigated in cerium and manganese doped Sr$\_$0.6/Ba$\_$0.4/Nb$_2$O$\_$6/(60SBN) ceramic system. Structural deformation of 60SBN by dopants did not appeared. 1350$^{\circ}C$-10 h sintered specimen had higher densification than 1250$^{\circ}C$-10 h sintered one, to which dielectric properties are related. That the feature of dielectric maxima peaks was typical Diffusive Phase Transition (DPT), it was explained by "random-field Ising model". Even though 60SBN has large dielectric loss at high frequency above 100 ㎑, it is desirable for optical applications because of low dielectric loss at low frequency. From Arrhenius plot of temperature, the activation energy was calculated to 0.45-0.49 eV.

• Electrical & Electronic Materials
• /
• v.9 no.10
• /
• pp.1008-1012
• /
• 1996

I-V, C-V characteristics of inverted staggered type hydrogenerated amorphous silicon thin film transistor(a-Si:H TFT) was studied and experimentally verified. The results show that the log-log plot of drain current increased by voltage increase. The saturated drain current of DC output characteristics increased at a fixed gate voltage. According to the increase of gate voltage, activation energy of electron and the increasing width of Id at high voltage were decreased. Id saturation current saturated at high Vd over 4.5V, Vg-ld hysteresis characteristic curves occurred between -15V and 15V of Vg. Hysteresis current decreased at low voltage of -15V and increased at high voltage of 15V.

• Proceedings of the KIEE Conference
• /
• 2004.07c
• /
• pp.1759-1761
• /
• 2004

In this paper, we studied on life-decision of underground cable of live-line state. Data of CV 6.6kV and 22kV cable's life is got data measured insulation resistance by D.C. overlapped current. We confirmed that D.C resistance reduced by time. Aging of cable could be occurred by electrical, thermal, mechanical stress and complex aging confirmed that proceeded by Weibull plot. In the result, life of 6.6kV cable remained 21 years till light caution and 35 years till heavy caution, so aging of 6.6kV XLPE cable was not occurred. Life of 22kV cable remained 10 years till light caution and 22 years till heavy caution. We confirmed that the designed life of 22kV cable is similar to the measured life.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.2175-2178
• /
• 2005

During normal machine operation, partial discharge(PD) measurements were performed with turbine generator analyzer(TGA) in five high voltage motors(rated 6.6kV). These high voltage motors were installed with 80pF capacitive couplers at the terminal box. The PD patterns were displayed two dimensional and three dimensional. TGA summarizes each plot with two quantities such as the normalized quantity number(NQN) and the peak PD magnitude(Qm). Off-line PD measurements were conducted on five motors. These motors were energized to 3.81kV. The PD levels in pC were measured with a conventional digital PD detector. The comparison of positive to negative PD indicates whether the defect elements of PD are within the insulation or on the insulation surface. Internal discharges were generated in phase A, B and C of COP-B and pulv.-B, in phase B of Pulv. C and in phase C of Pulv.-D motor. Discharge at conductor surface was discovered in phase A of Pulv. D motor. Slot discharges occurred in three phases of Pulv. E motor.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.4
• /
• pp.178-182
• /
• 2006

Five model coils of 6.6 kV motor were manufactured with several defects. These stator coils have artificial defects such as void of groundwall insulation, removal of semi-conductive coating and damage of strand insulation. Epoxy-mica coupler(80 pF) was connected to five model coil terminals. The voltage applied to the coils was 3.81 kV, 4.76 kV, 6.0 kV and 6.6 kV, respectively. Partial discharge(PD) tests performed in the laboratory and shield room. Digital PD detector(PDD) and turbine generator analyzer(TGA) were used to measure PD activity. TGA summarizes each plot with two quantities such as the normalized quantity number(NQN) and the peak PD magnitude(Qm). The PD levels in pC were measured with PDD. PD patterns of model coils were indicated the internal and slot discharges. PD patterns are consistent with the result of measurement using PDD and TGA instruments. AC breakdown test was performed on five model coils in order to confirm the result of PD measurements. All the failures were located in a line-end coil at the exit from the core slot.