• Title/Summary/Keyword: C-O bond

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Studies on the Quaternization of Tertiary Amines (Ⅱ). Kinetics and Mechanism for the Reaction of Substituted Phenacyl Bromides with Substituted Pyridines (3차 아민의 4차화반응에 관한 연구 (제2보). 치환 브롬화페나실류와 치환 피리딘류와의 반응에 관한 반응속도론적 연구)

  • Yoh Soo Dong;Kwang Taik Shim;Lee Kyung A
    • Journal of the Korean Chemical Society
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    • v.25 no.2
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    • pp.110-118
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    • 1981
  • Kinetics and mechanism for the reaction of substituted phenacyl bromides with substituted pyridines have been determined at 25, 35 and $45^{\circ}C$ in methanol and dimethylformamide by the conductivity method. The rate constants for the reaction of various pyridines with phenacyl bromide shown that electron-donating substituents in the pyridine increase the rate, while electron-attracting one decrease in both solvents. The effect of substituents in substrate, the rate being increased by electron-attracting substituents. This is as expected for nucleophilic attack of amines on the carbon atom. Isokinetic and $Br{\psi}nsted$ linear relationship were shown in the reaction of phenacyl bromide with pyridines in both solvent in which isokinetic temperature were obtained 614, $202^{\circ}K$ and ${\beta}$ values were 0.29, 0.36 in methanol and dimethylformamide respectively. In the case of the reaction of substituted phenacyl bromide with pyridines, isokinetic temperature decreases with increasing electron-attracting ability of the substituents in the phenacyl bromide, while the ${\beta}$ values were reverse. From the above results, it can be inferred that N…C bond formation decreases progressively from p-chloro- to p-methoxyphenacyl bromide and the bond formation predominates in DMF than methanol. The ${\rho}$ values of Hammett equation of the reaction of phenacyl bromide with substituted pyridines are negative in both solvent, but its value was larger negative in DMF than methanol and the ${\rho}$ value of that of substitutted substrates with pyridine was 0.3, the low value is ascribed to direct $S_N2$ attack of the nitrogen atom in pyridine ring at the methylene carbon.

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Comparison of removal torques between laser-etched and modified sandblasted acid-etched Ti implant surfaces in rabbit tibias

  • Park, Kyung-Soon;Al Awamleh, Abdel Ghani Ibrahim;Cho, Sung-Am
    • The Journal of Advanced Prosthodontics
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    • v.10 no.1
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    • pp.73-78
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    • 2018
  • PURPOSE. The purpose of this study was to analyze the effects of two different implant surface treatments on initial bone connection by comparing the Removal Torque Values (RTQs) at 7 and 10 days after chemically modified, sandblasted, large-grit and acid-etched (modSLA), and Laser-etched (LE) Ti implant placements. MATERIALS AND METHODS. Twenty modSLA and 20 LE implants were installed on the left and right tibias of 20 adult rabbits. RTQs were measured after 7 and 10 days in 10 rabbits each. Scanning electron microscope (SEM) photographs of the two implants were observed by using Quanta FEG 650 from the FEI company (Hillsboro, OR, USA). Analyses of surface elements and components were conducted using energy dispersive spectroscopy (EDS, Horiba, Kyoto, Japan). RESULTS. The mean RTQs were $12.29{\pm}0.830$ and $12.19{\pm}0.713$ Ncm after 7 days (P=.928) and $16.47{\pm}1.324$ and $16.17{\pm}1.165$ Ncm after 10 days (P=.867) for LE and modSLA, respectively, indicating no significant inter-group differences. Pore sizes in the LE were $40{\mu}m$ and consisted of numerous small pores, whereas pore sizes in the modSLA were $5{\mu}m$. In the EDS analysis, Ti, O, and C were the only three elements found in the LE surfaces. Na, Ca, Cl, and K were also observed in modSLA, in addition to Ti, O, and C. CONCLUSION. The implants showed no significant difference in biomechanical bond strength to bone in early-stage osseointegration. LE implant can be considered an excellent surface treatment method in addition to the modSLA implant and can be applied to the early loading of the prosthesis clinically.

Adsorption Characteristics of Chromium Ion at Low Concentration Using Oxyfluorinated Activated Carbon Fibers (함산소불화 활성탄소섬유를 이용한 저농도 크롬이온의 흡착 특성)

  • Kim, Min-Ji;Jung, Min-Jung;Choi, Suk Soon;Lee, Young-Seak
    • Applied Chemistry for Engineering
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    • v.26 no.4
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    • pp.432-438
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    • 2015
  • In this work, activated carbon fibers (ACFs) were oxyfluorinated and their adsorption ability for the low concentration of hexavalent chromium in an aqueous solution was investigated. The pore structure and surface properties of ACFs were examined by BET and X-ray Photoelectron Spectroscopy (XPS), respectively. Due to the oxyfluorination treatment, the content of (C-O) bond on ACFs surface which influences the adsorption capacity for heavy metal ions increased largely, resulting that $Cr^{6+}$ adsorption equilibrium reached quickly within 10 min. In addition, the maximum removal efficiency at the initial $Cr^{6+}$ concentration of 20 ppm was observed, which is a 100% improvement compared to that of non-treated ACFs. These results suggest that the oxyfluorination of ACFs can be applied as a good surface treatment for the effective adsorption of the low concentration of $Cr^{6+}$.

Property Variation of Diamond-like Carbon Thin Film According to the Annealing Temperature (열처리에 따른 Diamond-like Carbon (DLC) 박막의 특성변화)

  • Park, Ch.S.;Koo, K.H.;Park, H.H.
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.1
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    • pp.49-53
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    • 2011
  • Diamond-like carbon (DLC) films is a metastable form of amorphous carbon containing a significant fraction of Sp3 bond. DLC films have been characterized by a range of attractive mechanical, chemical, tribological, as well as optical and electrical properties. In this study DLC films were prepared by the RF magnetron sputter system on $SiO_2$ substrates using graphite target. The effects of the post annealing temperature on the Property variation of the DLC films were examined. The DLC films were annealed at temperatures ranging from 300 to $500^{\circ}C$ using rapid thermal process equipment in vacuum. The variation of electrical property and surface morphology as a function of annealing treatment was investigated by using a Hall Effect measurement and atomic force microscopy. Raman and X-ray photoelectron spectroscopy analyses revealed a structural change in the DLC films.

Kinetic Study on Nucleophilic Displacement Reactions of 2-Chloro-4-Nitrophenyl X-Substituted-Benzoates with Primary Amines: Reaction Mechanism and Origin of the α-Effect

  • Um, Tae-Il;Kim, Min-Young;Kim, Tae-Eun;Um, Ik-Hwan
    • Bulletin of the Korean Chemical Society
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    • v.35 no.2
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    • pp.436-440
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    • 2014
  • The ${\alpha}$-Effect; Ground state; Transition state; Intramolecular H-bonding; Yukawa-Tsuno plot; Second-order rate constants for aminolysis of 2-chloro-4-nitrophenyl X-substituted-benzoates (1a-h) have been measured spectrophotometrically in 80 mol % $H_2O/20$ mol % DMSO at $25.0^{\circ}C$. The Br${\emptyset}$nsted-type plot for the reactions of 2-chloro-4-nitrophenyl benzoate (1d) with a series of primary amines curves downward, which has been taken as evidence for a stepwise mechanism with a change in rate-determining step (RDS). The Hammett plots for the reactions of 1a-h with hydrazine and glycylglycine are nonlinear while the Yukawa-Tsuno plots exhibit excellent linearity with ${\rho}_X=1.22-1.35$ and ${\gamma}= 0.57-0.59$, indicating that the nonlinear Hammett plots are not due to a change in RDS but are caused by stabilization of substrates possessing an electron-donating group (EDG) through resonance interactions between the EDG and C=O bond of the substrates. The ${\alpha}$-effect exhibited by hydrazine increases as the substituent X changes from a strong EDG to a strong electron-withdrawing group (EWG). It has been concluded that destabilization of hydrazine through the electronic repulsion between the adjacent nonbonding electrons is not solely responsible for the substituent dependent ${\alpha}$-effect but stabilization of the transition state is also a plausible origin of the ${\alpha}$-effect.

Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors

  • Cheong, Woo-Seok;Lee, Jeong-Min;Lee, Jong-Ho;KoPark, Sang-Hee;Yoon, Sung-Min;Byun, Chun-Won;Yang, Shin-Hyuk;Chung, Sung-Mook;Cho, Kyoung-Ik;Hwang, Chi-Sun
    • ETRI Journal
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    • v.31 no.6
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    • pp.660-666
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    • 2009
  • We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

Characteristics of p-Xylene Adsorption using Functionalized Mesoporous Silica (관능기화 메조포러스 실리카를 이용한 파라자일렌 흡착 특성)

  • Kim, Sang-Hyoun;Park, Jonghoon;Kang, Seok-Tae;Chung, Jae-Woo;Kim, Soo-Hong;Cho, Yunchul;Lee, Chae-Young
    • Journal of the Korean GEO-environmental Society
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    • v.13 no.6
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    • pp.27-31
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    • 2012
  • This study was designed to examine the feasibility of functionalized mesoporous silica as the adsorbent for benzene, toluene, ethylbenzene, and xylene isomers (BTEX) in groundwater. p-Xylene was used as the model compound of BTEX. A series of functionalized mesoporous silica with MCM-41 type of structure was synthesized using a co-condensation method. Monoamine, triamine, nitrile, phenyl, and octyl groups were functionalized to the mesoporous silica structure. Adsorption sites for p-Xylene in a functionalized mesoporous silica were Si-O-Si covalent bond, the surfactant, and the functional group. Octyl-functionalized mesoporous silica with stearyltrimethylammonium chloride as a surfactant showed the highest adsorption ability. The maximum xylene adsorption capacity of the octyl-functionalized mesoporous silica with stearyltrimethylammonium chloride based on Langmuir model was 4.17 mmol/g on $20^{\circ}C$, which was 2.9 times higher than that of MCM-41.

Thermodynamic Properties of Lanthanides Complexes with Benzoylformate Anion (Lanthanides-Benzoylformate 착물 형성에 관한 열역학적 연구)

  • Young-Inn Kim;Sun-Geum Park
    • Journal of the Korean Chemical Society
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    • v.37 no.4
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    • pp.442-447
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    • 1993
  • The thermodynamic parameters (${\Delta}$G, ${\Delta}$H and ${\Delta}$S) of lanthanides(III)-benzoylformate complexes in aqueous solution have been determined in the ionic medium of 0.1M $NaClO_4$ at 25$^{\circ}C$, using pH and enthalpy titration method. The stability constants of the lanthanide(III)-benzoylformate complexes (1 : 1) agree well with the general relationships for the bidentate ligands (e.g., log${\beta}_1$ vs. p$K_a$). Thermodynamic evidences show that the oxygen atom in ketone group is coordinated along with the carboxylate group. It is ascribed to the increasing charge density on the oxygen atom in ketone group due to the conjugation effect in the benzoylformate ligand. Thermodynamic results also indicate that the complexes are stabilized by the enthalpy effect caused by the ionic interaction of metal-oxygen bond as well as the entropy effect.

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A Study on the high Temperature Properties of the Graded Thermal Barrier Coatings by APS and PAS (APS법으로 제조된 열장벽 피막과 PAS법으로 제조된 열장벽 성형체의 고온 물성에 관한 연구)

  • 강현욱;권현옥;한주철;송요승;홍상희;허성강;김선화
    • Journal of the Korean institute of surface engineering
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    • v.32 no.2
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    • pp.144-156
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    • 1999
  • Thermal Barrier Coating with Functional Gradient Materials (FGM-TBC) can play an important role to protect the parts from harmful environments in high temperatures such as oxidation, corrosion, and wear and to improve the efficiency of aircraft engine by lowering the surface temperature on turbine blade. FGM-TBC can increase the life spans of product and improve the operating properties. Therfore, in this study the evaluations of mechanical and thermal properties of FGM-TBC such as fatigue, oxidation and wear-resistance at high temperatures have been conducted. The samples of both the TBC with 2, 3, 5 layers (YSZ/NiCrAlY) to be produced by Air Plasma Spray method (APS) and the bulk TBC with 6 layers to be produced by Plasma Assisted Sintering method (PAS) were used. Furthermore, residual stress, bond strength, and thermal conductivity were evaluated. The average thickness of the APS was 500$\mu\textrm{m}$ to 600$\mu\textrm{m}$ and the average thickness of the PAS was 3mm. The hardness number of the top layer of APS was 750 Hv to 810Hv and that of PAS was 950 Hv to 1440Hv. The $ZrO_2$ coating layer of APS was composed of tetragonal structure after spraying as the result of XRD analysis. As shown in the results of the high temperature wear test, the 3 layer coating of APS had the best wear resistance at $800^{\circ}C$ and the 5 layer coating of APS had the best wear resistance at $600^{\circ}C$. But, these coatings had the tendency of the low-temperature softening at $300^{\circ}C$. The main mechanism of wear was the adhesive wear and the friction coefficient of coatings was increased as increasing the test temperatures. A s results of thermal conductivity test, the ${\Delta}T$ of the APS coating was increased as number of layer and the range of thermal conductivity of the PAS was $800^{\circ}C$ to $1000^{\circ}C$.

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Dielectric Characteristics due to the nano-pores of SiOCH Thin Flm (기공형성에 의한 SiOCH 박막의 유전 특성)

  • Kim, Jong-Wook;Park, In-Chul;Kim, Hong-Bae
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.3
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    • pp.19-23
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    • 2009
  • We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

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