• The Korean Journal of Rheology
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• v.5 no.2
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• pp.161-169
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• 1993

Glucomannan(G.M.)은 Amorphophallus Konjac C. Koch의 tuber로부터 분리되었고. 이 G.M.은 다시 침전제로 메탄올을 사용하여 4단계로 분별되었다.(F.1, F.2, F.3, F.4,). 각분 별물에 비하여 직선으로부터 벗어남을 보였다. Low shear viscometer로 G.M. 용액의 viscosity를 측정하였고 농도와 zero shear specific viscosity의 logarithm을 도시한 결과 inflection point를 나타내었다. 이것은 G.M. 분자들의 coil overlap의 시작에서 기인한 것이 고 묽은 용액에서 진한 용액으로의 전이행동은 임계농도. C＊=4/[η]에서 일어났고 이때의 zero shear specific viscosity는 10을 나타내었다. 또한 specific viscosity는 묽은 용액에대해 서는 C14로써 변화하였고 진한 요액에서는 C3.0으로변화하였다. G.M.의 고체상태에 대한 유 전성($\varepsilon$＇,$\varepsilon$＂)과 점탄성(C＇,C＂)계수들을 액체질소 온도에서부터 15$0^{\circ}C$ 온도범위에 걸쳐 4단계로 film을 건조시키면서 10Hz에서 측정하였다. G.M. film의 유전성과 점탄성의 허수부 분은 ($\varepsilon$＂, C＂), -10$0^{\circ}C$에서 peak를 나타내었고 이 peak는 hydroxy methyl 기들의 회전 운동에서 생겨난 것이다. 건조시키지 않은 상태의 G.M. film의 유전성과 점탄성의 허수부분 의 값들은 -5$0^{\circ}C$에서 물 분자의 운동에 의하여 생긴 peak를 보였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.127-130
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• 2002

In this study, development of a new LTCC material using a non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. For LTCC application, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, CaWO$_4$ was tamed out the suitable LTCC material. CaWO$_4$ can be sintered up to 98% of full density at 1200$^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 10.15, 62880GHz, and -27.8ppm/$^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, 0.5∼1.5 wt% LiF were added to CaWO$_4$. LiF addition reduced the sintering temperature/time down to 800$^{\circ}C$/10∼30min due to the reactive liquid phase sintering. Dielectric constant lowered from 10.15 to 9.38 and Q x fo increased up to 92000GHz with increasing LiF content.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.900-905
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• 1996

We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.

• Kyungpook Mathematical Journal
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• v.19 no.2
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• pp.205-211
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• 1979

In this paper we continue the study of formation radical (F-radical) classes initiated in [3]. Hereditary and stronger properties of F-radical classes are discussed by giving construction for lower hereditary, lower stronger and lower strongly hereditary F-radical classes containing a given class M. It is shown that the Baer F-radical B is the lower strongly hereditary F-radical class containing the class of all nilpotent ideals and it is the upper radical class with $\{(I,\;N){\mid}N{\in}C,\;N\;is\;prime\}{\subset}SB$ where SB denotes the semisimple F-radical class of B and C is an arbitrary but fixed class of homomorphically closed near-rings. The existence of a largest F-radical class contained in a given class is examined using the concept of complementary F-radical introduced by Scott [5].

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.55-61
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• 2006

The microwave dielectric properties and low temperature sintering of $Ca[Ti_{1-x}(Ni_{1/3}Nb_{2/3})_x]O_3$ system were investigated at the sintering temperature $1,200\~1,350^{\circ}C$. The density and quality factors $(Q{\times}f)$ increased while dielectric constants slightly decreased with the decrease of Ti. The dielectric constant, quality factor, and temperature coefficient of resonance frequency $(\tau_f)$ were 64, 17,000 GHz, and $-9.1\;ppm/^{\circ}C$ respectively, when $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ ceramics were sintered at $1,300^{\circ}C$ for 4 h. $2Li_2O-B_2O_3$ was added to $CaTi_{1/2}(Ni_{1/3}Nb_{2/3})_{1/2}O_3$ to decrease the sintering temperature for LTCC application. The microwave dielectric properties of the samples sintered at $925^{\circ}C$ for 2 h with the addition of $6\;wt\%\;2Li_2O-B_2O_3$ were $\varepsilon_r=48.7,\;Q{\times}f=8,460\;GHz$, and $\tau_f=+5.6ppm/^{\circ}C$. Compatibility test of the composition with silver electrode shows no reaction with silver electrode, implying the feasibility as a high-K LTCC material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.604-610
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• 2003

The effects of sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of (Z $n_1$$_{-xM}$ $g_{x}$)Ti $O_3$ system were investigated. Highly dense samples were obtained for (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of 〈1 wt.%, respectively. The microwave dielectric properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ with 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$ sintered at 90$0^{\circ}C$ were as follows : Q$\times$ $f_{o}$ = 50,800 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -53 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the above system. The optimum amount of Ti $O_2$ was 15 moi.% when sintered at 87$0^{\circ}C$, at which we could obtain following results: Q$\times$ $f_{o}$ = 32,800 GHz, $\varepsilon$$_{r}$ = 26, and$\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.EX>.EX>.EX>.EX>.EX>.EX>.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.57-63
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• 2003

The effects of glass addition on the low-temperature sintering and microwave dielectric properties of $BaO-Nd_2O_3-TiO_2$ dielectric ceramics were studied. When 10∼13 wt% of lithium borosilicate glass was added, the sintering temperature decreased from 130$0^{\circ}C$to 850-$900^{\circ}C$relative density of more than 97% was obtained. When the sample was sintered at $850^{\circ}C$ with 10 wt% of glass, the dielectric properties of $\epsilon_r{\ge}54$, $Q{\times}f_0{\ge}2300$, and $\tau_f{\ge}+8ppm/^{\circ}C$ were obtained.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1514-1516
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• 1999

This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.

• Journal of applied mathematics & informatics
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• v.32 no.3_4
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• pp.331-341
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• 2014

In this article we introduce the sequence spaces $_2c^I_0(f,p)$, $_2c^I(f,p)$ and $_2l^I_{\infty}(f,p)$ for a modulus function f, where $p=(p_k)$ is a sequence of positive reals and study some of the properties of these spaces.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.324-331
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• 1995

0.36[wt%l $SiO_{2}$ and 0.1[wt%] $H_{3}$B $O_{3}$ were added to strontium ferrite magnets of the magnetoplumbite phase SrO.5.7F $e_{2}$ $O_{3}$ to hinder grain growth and accelerate sintering, respectively. This experiment was carried out to investigate effect of particle size distribution as a function of milling time(20, 30, 40, 50, 60, 70 hours) on the magnetic properties of SrO.5.7F $e_{2}$ $O_{3}$ ferrite magnet. The B-H curve, density and the degree of orientation were measured. And the microstructure of ferrite magnets was examined with a SEM. The optimal conditions and properties of the typical sample are the following : The milling time was 60 hours. Magnetic and physical properties are $B_{r}$=4, 000[G], $_{b}$ $H_{c}$=3, 330[Oe], (BH)max=3.786[MGOe], $_{I}$ $H_{c}$=3, 525[Oe], density=5.0063[g/c $m^{3}$] and orientation factor f=0.813.0.813.3.3.