• Journal of the Korean Statistical Society
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• 제13권2호
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• pp.114-120
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• 1984

A parallel flats fraction for the $3^n$ design is defined as union of flats ${t}At=c_i(mod 3)}, i=1,2,\cdots, f$ and is symbolically written as At=C where A is rank r. The A matrix partitions the effects into n+1 alias sets where $u=(3^{n-r}-1)/2. For each alias set the f flats produce an ACPM from which a detection matrix is constructed. The set of all possible parallel flats fraction C can be partitioned into equivalence classes. In this paper, we develop some properties of a detection matrix and C.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 춘계 학술발표강연 및 논문개요집
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• pp.124-124
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• 2002

• 충청수학회지
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• 제36권4호
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• pp.297-305
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• 2023

In this paper, we study some properties about C^f_k-structures and obtain a sufficient condition to be lifting C^f_k-structure, and using the above result, we can obtain a Stasheff's result about to be lifting H-structure as a corollary.

• 대한수학회논문집
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• 제34권3호
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• pp.981-989
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• 2019

In this paper we deal with some shadowing properties of discrete dynamical systems on a compact metric space via the density of subdynamical systems. Let $f:X{\rightarrow}X$ be a continuous map of a compact metric space X and A be an f-invariant dense subspace of X. We show that if $f{\mid}_A:A{\rightarrow}A$ has the periodic shadowing property, then f has the periodic shadowing property. Also, we show that f has the finite average shadowing property if and only if $f{\mid}_A$ has the finite average shadowing property.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1991년도 춘계연구발표회 논문개요집
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• pp.73-74
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• 1991

The films with ferromagnetic fine particles dispersed in nonmagnetic matrix, such as $Fe-Al_2O_3$ and Fe-Cu have been studied for use of magnetic recording medium, optically device and sensor. Their magnetic properties depend strongly on structural parameter such as size and volume fraction of ferromagnetic particles. Fe-Cr-Ni alloy sputtered films also have microstructure with ferromagnetic -- b.c.c phase and nonmagnetic f.c.c phase grains. Magnetic properties of these films depend strongly on such a unique structure. These are depend on the ratio in volume of ferromagnetic particles to nonmagnetic ones $V_F/V_N$, the saturation magnetization Ms increased with increase of $V_F/V_N$. The coercivity Hc of the as-deposited films took maximum value of about 200 Oe at adequate $V_F/V_N$ and then Ms and Squareness S were 500 emu/cc and 0.5, respectively.(omitted)

• 호남수학학술지
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• 제31권2호
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• pp.233-237
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• 2009

In this paper, we show that: (1) every strongly ${\omega}$-monolithic space X with countable fan-tightness is Fr$\'{e}$chet-Urysohn; (2) a direct proof of that X is Lindel$\"{o}$f when $C_p$(X) is Fr$\'{e}$chet-Urysohn; and (3) X is Lindel$\"{o}$f when X is paraLindel$\"{o}$f and $C_p$(X) is AP. (3) is a generalization of the result of [8]. And we give two questions related to Fr$\'{e}$chet-Urysohn and AP properties on $C_p$(X).

• 전자공학회논문지A
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• 제33A권5호
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• pp.102-107
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• 1996

Use of a rapid thermal annealing (RTA) technique is shown to improve the properties of metal-ferroelectric BaMgF$_{4}$-silicon structures. The fluoride film was deposited in an ultra-high vacuum system at asubstrate temperature of 300$^{\circ}C$. A post-deposition annelaing was conducted for 10 seconds at 600.deg. C in a vacuum of 0.1 Torr, using a home-made RTA apparatus. The results showed that the resistivity of the ferroelectric BaMgF$_{4}$ film from a typical value of 1-2${\times}10^{11}{\Omega}{\cdot}cm$ before the annealing to about 5${\times}10^{13}{\Omega}{\cdot}cm$ and reduce the interface state density of the BaMgF$_{4}$/Si interface to about 8${\times}10^{10}cm^{2}{\cdot}$eV. Ferroelectric hysteresis measurements using a sawyer-tower circuit yielded remanent polarization and coercive field values of about 0.5$\mu$C/cm$^{2}$ and 80 kV/cm, respectively. the typical remanent polarization of the BaMgF$_{4}$ films ont he (100) and (111) oreientated silicon wafers were 0.5 - 0.6 $\mu$C/cm$^{2}$ and that of th efilms on the (110) wafers was 1.2$^{\circ}C$/cm$^{2}$.

• 한국수학교육학회지시리즈B:순수및응용수학
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• 제2권2호
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• pp.157-162
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• 1995

Let I be the interval, $S^1$ the circle and let X be a compact metric space. And let $C^{circ}(X,\;X)$ denote the set of continuous maps from X into itself. For any f$f\in\;C\circ(X,\;X),\;let\;P(f),\;R(f),\;\Gamma(f),\;\Lambda(f)\;and\;\Omega(f)$ denote the collection of the periodic points, recurrent points, ${\gamma}-limit{\;}points,{\;}{\omega}-limit$ points and nonwandering points, respectively.(omitted)

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제16회 학술발표회 논문개요집
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• pp.77-77
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• 1998

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.378-380
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• 2009

$MgF_2$ is a current material for the optical applications in the UV and deep UV range. Process variables for manufacturing the $MgF_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions, and then by changing a number of vapor deposition conditions and substrate temperature, Annealing conditions variously, structural and Optical characteristics were measured. Thereby, optimum process variables were derived. Nevertheless, modern applications still require improvement of the optical and structural quality of the deposited layers. In the present work, the composition and microstructure of $MgF_2$ single layers grown on slide glass substrate by Electro beam Evaporator(KV-660) processes, were analyzed and compared. The surface Substrate temperature having an effect on the quality of the thin film was changed from $200[^{\circ}C]$ to $350[^{\circ}C]$ at intervals of $50[^{\circ}C]$. and annealing temperature an effect on the thin film was changed from $200[^{\circ}C]$ to $400[^{\circ}C]$ at intervals of $50[^{\circ}C]$. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM.