• Journal of Sensor Science and Technology
• /
• v.11 no.4
• /
• pp.247-253
• /
• 2002

For fabrication of the pyroelectric IR sensor $(Pb,La)TiO_3(PLT)$/$LiTaO_3$/(LTO)/PLT ferroelectric thin films was deposited by rf magnetron sputtering followed by rapid thermal annealing and the crystallinity as a function of annealing temperature and time was investigated. Permittivity and dielectric loss factor of ferroelectric thin films as a function of c-axis preffered orientation was measured. Also pyroelectric coefficient of ferroelectric thin films with largest c-axis preffered orientation was measured and obtain figure of merit of voltage response($F_V$) and detectivity($F_D$). In this case $F_V$, $F_D$ was $5.63{\times}10^{-10}\;C{\cdot}cm/J$, $1.98{\times}10^{-8}\;C{\cdot}cm/J$, respectively.

• Journal of Sensor Science and Technology
• /
• v.29 no.5
• /
• pp.324-327
• /
• 2020

The impact of output conductance (g_o) on the short-circuit current-gain cut-off frequency (f_T) in In_0.8Ga_0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of f_T in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for f_T in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with L_g from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (g_oi) on f_T was negligible. This was because, from the simplified SSM perspective, three model parameters, such as g_{m_ext}, C_{gs_ext} and C_{gd_ext}, were weakly dependent on g_oi. However, in short-channel devices, g_oi was found to play a significant role in degrading f_T as L_g was scaled down. The increase in g_oi in short-channel devices caused a considerable reduction in g_{m_ext} and an overall increase in the total extrinsic gate capacitance, yielding a decrease in f_T with g_oi. Finally, the results were used to infer how f_T is influenced by g_oi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down L_g.

• Korean Journal of Crystallography
• /
• v.13 no.3_4
• /
• pp.148-151
• /
• 2002

The molecular and crystal structure of metalaxyl C/sub15/H/sub21/NO₄, was determined by single crystal x-ray diffraction study. Crystallographic data for, title compound P2₁/c, a=7.849(4) Å, b=13.081(5) Å, c=15.100(3) Å, β=101.8(2)°, V= 1517.6(3) ų, Z=4. The molecular. Structure model was solved by direct method and refined by full-matrix least- squares. The final reliable factor, R, is 0.067 for 1694 independent reflections (F/sub o//sup 2/>4σ(F/sub o//sup 2/)). The molecular structure of title compound shows an intramolecular hydrogen bond: Cl2-Hl2A…O1.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.7
• /
• pp.604-610
• /
• 2003

The effects of sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of (Z $n_1$$_{-xM}$ $g_{x}$)Ti $O_3$ system were investigated. Highly dense samples were obtained for (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of 〈1 wt.%, respectively. The microwave dielectric properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ with 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$ sintered at 90$0^{\circ}C$ were as follows : Q$\times$ $f_{o}$ = 50,800 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -53 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the above system. The optimum amount of Ti $O_2$ was 15 moi.% when sintered at 87$0^{\circ}C$, at which we could obtain following results: Q$\times$ $f_{o}$ = 32,800 GHz, $\varepsilon$$_{r}$ = 26, and$\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.EX>.EX>.EX>.EX>.EX>.EX>.

• Korean Journal of Crystallography
• /
• v.13 no.2
• /
• pp.86-90
• /
• 2002

The structure of N-(Diphenylmethylene)aminomethylphosphonate has been determined by X-ray diffraction methods. The crystal system is triclinic, space group P(equation omitted), unit cell constants, a＝8.967(2) (equation omitted), b＝9.309(2) (equation omitted), c＝ 10.981(2) (equation omitted), α＝101.42(2)°, β＝92.22(2)°, γ＝92.23(2)°, V=896.8(3) (equation omitted), T＝296 K, Z＝2, D/sub c/＝1.227 Mgm/sup -3/. The intensity data were collected on an Enraf-Nonius CAD-4 Diffractometer with graphite monochromated MoKα radiation (λ＝0.7107(equation omitted)). The molecular structure was solved by direct methods and refined by full-matrix least-squares to a final R＝7.3% for 979 unique observed F/sub o/>4σ(F/sub o/) refections and 209 parameters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.8
• /
• pp.840-845
• /
• 2004

The microstructure and microwave dielectric properties of $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of 140$0^{\circ}C$∼150$0^{\circ}C$. To improve the quality factor and the temperature coefficient of resonant frequency,$ Ti{O}_2(\varepsilon\Gamma=100, Q\times f_\Gamma=40,000 GHz,\ta_f= +450 ppm\diagup^{\circ}C $ was added in ${Mg}_4{Ta}_2{O}_9$ceramics. The dielectric and structural properties were investigated. According to the XRD patterns, $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics had the ${Mg}_4{Ta}_2{O}_9$ phase(hexagonal) and ${MgTi}_2{O}_5$phase(orthorhombic). The dielectric constant($\varepsilon_r$). quality($Qtimes{f}_r$${\tau}_f$) of the $(1-x){Mg}_4{Ta}_2{O}_9-xTi{O}_2(x=0\sim0.9)$ ceramics were 8.12∼18.59, 18,750∼186,410 GHz and －36.02∼＋3.46 ppm/$^{\circ}C$, respectively.

• Journal of Powder Materials
• /
• v.17 no.4
• /
• pp.289-294
• /
• 2010

For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.6
• /
• pp.517-523
• /
• 2008

The microwave dielectric properties of $LiNb_3O_8-TiO_2$ based ceramics with low firing agents, CuO, $Bi_2O_3$, $B_2O_3$, $SiO_2$, $TiO_2$, were investigated to improve the sintering condition for the LTCC system. According to the X-ray diffraction and SEM, the ceramics of $LiNb_3O_8-TiO_2$ with low firing agents showed no significant second phases within a range of experiments, and fine microstructures. By adding the low firing agents, the sintering temperature decreased from $1200^{\circ}C$ to $925^{\circ}C$. Based on the results of electrical measurements, the $LiNb_3O_8-TiO_2$ ceramics showed a promising microwave dielectric properties for LTCC applications, those are ${\varepsilon}_r$ (dielectric constant) = 44, Q f (quality factor) = 18000, and ${\tau}_f$ (the temperature coefficient of resonant frequency) = $-1.5\;ppm/^{\circ}C$.

• The Pure and Applied Mathematics
• /
• v.30 no.2
• /
• pp.109-129
• /
• 2023

In this paper, we introduce a second order linear differential operator ^T□: C^∞ (M) → C^∞ (M) as a natural generalization of Cheng-Yau operator, [8], where T is a (1, 1)-tensor on Riemannian manifold (M, h), and then we show on compact Riemannian manifolds, divT = divT^t, and if divT = 0, and f be a smooth function on M, the condition ^T□ f = 0 implies that f is constant. Hereafter, we introduce T-energy functionals and by deriving variations of these functionals, we define T-harmonic maps between Riemannian manifolds, which is a generalization of L_k-harmonic maps introduced in [3]. Also we have studied fT-harmonic maps for conformal immersions and as application of it, we consider fL_k-harmonic hypersurfaces in space forms, and after that we classify complete fL₁-harmonic surfaces, some fL_k-harmonic isoparametric hypersurfaces, fL_k-harmonic weakly convex hypersurfaces, and we show that there exists no compact fL_k-harmonic hypersurface either in the Euclidean space or in the hyperbolic space or in the Euclidean hemisphere. As well, some properties and examples of these definitions are given.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.5
• /
• pp.397-403
• /
• 2003

Microwave dielectric properties of (1-x)ZnW $O_4$-xTi $O_2$ ceramic systems were investigated with calcination temperatures and Ti $O_2$ contents. The ZnW $O_4$ ceramic could be suitably sintered at 1075$^{\circ}C$ and showed the dielectric constant of 13.6, quality factor(Q$\times$ $f_{O}$value) of 22,000 and temperature coefficient of resonant frequency($\tau$$_{f}$) of -65$\pm$2ppm/$^{\circ}C$. Increasing the amount of Ti $O_2$ in the range of 0.25 to 0.45 mol, the dielectric constant and $\tau$$_{f}$ increased due to the role of Ti $O_2$ but the quality factor decreased due to the increase of phase boundaries. The 0.7ZnW $O_4$-0.3Ti $O_2$ ceramic showed the dielectric constant of 19.8, qualify factor(Q$\times$ $f_{0}$) of 20,000 and $\tau$$_{f}$ of -3$\pm$1ppm/$^{\circ}C$.>.EX>.>.>.