• Journal of the Korean Society of Costume
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• v.54 no.5
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• pp.71-81
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• 2004

The purpose of this study was to investigate the customer service factors and evaluation of consumer satisfaction on the purchase through the C2C E- commerce, focusing on the fashion goods. 190 college students who have purchased products via C2C E-commerce were surveyed. For data analysis, descriptive statistics, 1-test, Pearson＇s correlations, and multiple regression were used. As the results, 50.5% of respondents have purchased fashion products through C2C. Out of 4 C2C characteristics factors. there was statistically the significant difference in only ＇entertainment factor＇ between males and females. All five SERVQUAL＇s factors used for measuring service factors in this study were correlated to customer satisfactions scores. Also. results of multiple regression revealed that assurance, empathy, and reliability were significantly to related to customer satisfaction. Based on these results, fashion marketing strategy for C2C development would be suggested.

• Advances in nano research
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• v.12 no.1
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• pp.25-35
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• 2022

Within the framework of the density functional theory combined with the method of non-equilibrium Green's functions (DFT + NEGF), the features of electron transport in fullerene nanojunctions, which are «core-shell» nanoobjects made of a combination of fullerenes of different diameters C₂₀, C₈₀, C₁₈₀, placed between gold electrodes (in a nanogap), are studied. Their transmission spectra, the density of state, current-voltage characteristics and differential conductivity are determined. It was shown that in the energy range of -0.45-0.45 eV in the transmission spectrum of the "Au-C₁₈₀-Au" nanojunction appears a HOMO-LUMO gap with a width of 0.9 eV; when small-sized fullerenes C₂₀, C₈₀ are intercalation into the cavity C₁₈₀ the gap disappears, and a series of resonant structures are observed on their spectra. It has been established that distinct Coulomb steps appear on the current-voltage characteristics of the "Au-C₁₈₀-Au" nanojunction, but on the current-voltage characteristics "Au-C₈₀@C₁₈₀-Au", "Au-(C₂₀@C₈₀)@C₁₈₀-Au" these step structures are blurred due to a decrease in Coulomb energy. An increase in the number of Coulomb features on the dI/dV spectra of core-shell fullerene nanojunctions was revealed in comparison with nanojunctions based on fullerene C₆₀, which makes it possible to create high-speed single-electron devices on their basis. Models of single-electron transistors (SET) based on fullerene nanojunctions "Au-C₁₈₀-Au", "Au-C₈₀@C₁₈₀-Au" and "Au-(C₂₀@C₈₀)@C₁₈₀-Au" are considered. Their charge stability diagrams are analyzed and it is shown that SET based on C₈₀@C₁₈₀-, (C₂₀@C₈₀)@C₁₈₀- nanojunctions is output from the Coulomb blockade mode with the lowest drain-to-source voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.433-433
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• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

• Journal of Welding and Joining
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• v.15 no.5
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• pp.104-114
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• 1997

The microstructure and bond strength were investigated on the SiC/SiC and SiC/mild steel joints brazed by Ag-5at%Ti alloy. Ag-5at%Ti-2at%Fe and -5at%Fe brazing alloys were also used to see the effects of Fe addition on the bond strength of SiC/SiC brazed joints. Brazing temperature and brazing gap were selected and examined as brazing variables. The microstructure of SiC/SiC brazed joints was affected by Fe addition to the Ag-5at%Ti alloy, but the bond strength was not. Increasing brazing temperature also changed the microstructure of $Ti_5Si_3$ reaction layer and brazing alloy matrix of the SiC/SiC and SiC/mild steel joints, but not the bond strength. Brazing gap had a great effects on the bond strength. Decreasing brazing gap from 0.2 mm to 0.1 mm in SiC/SiC brazing increased the bond strength from 187 MPa to 263 MPa and, in SiC/mild steel brazing, from 189 MPa to 212 MPa. It was concluded that the most important parameter on the bond strength in SiC/SiC and SiC/mild steel brazing was the relative ratio between brazing gap and specimen size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.1
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• pp.55-62
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• 2016

In this paper, we propose a hybrid multi.system-on-chip (H-MSoC) architecture that provides a high-flexibility system in a rapid development time. The H-MSoC approach provides a flexible system-on-chip (SoC) architecture that is easy to configure for physical- and application-layer development. The physical- and application-layer aspects are dynamically designed and modified; hence, it is important to consider a design methodology that supports rapid SoC development. Physical layer development refers to intellectual property cores or other modular hardware (HW) development, while application layer development refers to user interface or application software (SW) development. H-MSoC is built from multi-SoC architectures in which each SoC is localized and specified based on its development focus, either physical or application (hybrid). Physical HW development SoC is referred to as physical-SoC (Phy-SoC) and application SW development SoC is referred to as application-SoC (App-SoC). Phy-SoC and App-SoC are connected to each other via Ethernet. Ethernet was chosen because of its flexibility, high speed, and easy configuration. For prototyping, we used a LEON3 SoC as the Phy-SoC and a ZYNQ-7000 SoC as the App-SoC. The proposed design was proven in real-time tests and achieved good performance.

• Journal of Welding and Joining
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• v.14 no.4
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• pp.99-108
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• 1996

The microstructure and bond strength are examined on the SiC/SiC and SiC/mild steel joints brazed by the Ag-Ti based alloys with different Ti contents. In the SiC/SiC brazed joints, the thickness of the reaction layers at the bond interface and the Ti particles in the brazing alloy matrices increase with Ti contents. When Ti is added up to 9 at% in the brazing alloy. $Ti_3SiC_2$ phase in addition to TiC and $Ti_5Si_3$ phase is newly created at the bond interface and TiAg phase is produced from peritectic reaction in the brazing alloy matrix. In the SiC/mild steel joints brazed with different Ti contents, the microstructure at the bond interface and in the brazing alloy matrix near SiC varies similarly to the case of SiC/SiC brazed joints. But, in the brazing alloy matrix near the mild steel, Fe-Ti intermetallic compounds are produced and increased with Ti contents. The bond strengths of the SiC/SiC and SiC/mild steel brazed joints are independent on Ti contents in the brazing alloy. There are no large differences of the bond strength between SiC/SiC and SiC/mild steel brazed joints. In the SiC/mild steel brazed joints, Fe dissolved from the mild steel does not affect on the bond strength of the joints. Thermal contraction of the mild steel has nearly no effects on the bond strength due to the wide brazing gap of specimens used in the four-point bend test. The brazed joints has the average bond strength of about 200 MPa independently on Ti contents, Fe dissolution and joint type. Fracture in four-point bend test initiates at the interface between SiC and TiC reaction layer and propagates through SiC bulk. The adhesive strength between SiC and TiC reaction layer seems to mainly control the bond strength of the brazed joints.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.93-93
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• 2008

This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + $H_2$).The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which mean that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at $1180^{\circ}C$ on AlN of after annealing.

• Proceedings of the Korean Geotechical Society Conference
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• 1999.02a
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• pp.70-77
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• 1999

Consolidation settlements on soft clay are often large and potentially damaging to structures. Currently, large-scale projects are in progress in Korea. These structures will be constructed on both thick and soft clay layers, and so the accurate evaluation of magnitude of settlement is required at every step in design and construction. Especially, secondary compression play an important role in consolidation settlements on soft clay. Generally, the magnitudes of secondary compression are evaluated by laboratory and in-situ consolidation tests or by empirical $C_{a/}$ $C_{c}$ relationships. The empirical $C_{a/}$ $C_{c}$ may not be only economical, but a fast and powerful tool in estimating secondary consolidation settlement. However, databases of the $C_{a/}$ $C_{c}$ relationship for sites in Korea are currently insufficient. The purpose of this study is to investigate the relationship of $C_{a/}$ $C_{c}$, on marine clay near the southern sea in Korea. In this study a series of incremental loading consolidation tests (measuring base pore water pressure) are performed. It was found that the $C_{a/}$ $C_{c}$ on undisturbed marine clay equaled 0.0397. This value is similar to the value proposed by Mesri and Castro(1987) for inorganic clay and silt. and silt. and silt.

• Korean Journal of Mathematics
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• v.27 no.2
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• pp.437-444
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• 2019

For c > -1, let ${\nu}_c$ denote a weighted radial measure on ${\mathbb{C}}$ normalized so that ${\nu}_c(D)=1$. For $c_1,c_2>-1$ and $f{\in}L^1(D^2,\;{\nu}_{c_1}{\times}{\nu}_{c_2})$, we define the weighted Berezin transform $B_{c_1,c_2}f$ on $D^2$ by $$(B_{c_1,c_2})f(z,w)={\displaystyle{\smashmargin2{\int\nolimits_D}{\int\nolimits_D}}}f({\varphi}_z(x),\;{\varphi}_w(y))\;d{\nu}_{c_1}(x)d{\upsilon}_{c_2}(y)$$. This paper is about the space $M^p_{c_1,c_2}$ of function $f{\in}L^p(D^2,\;{\nu}_{c_1}{\times}{\nu}_{c_2})$ ) satisfying $B_{c_1,c_2}f=f$ for $1{\leq}p<{\infty}$. We find the identity operator on $M^p_{c_1,c_2}$ by using invariant Laplacians and we characterize some special type of functions in $M^p_{c_1,c_2}$.