• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Annual Conference of KIPS
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• 2012.04a
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• pp.499-502
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• 2012

빅 데이터 분석의 시대가 도래하면서 대용량 데이터의 특성과 계산 집약적 연산의 특성을 동시에 가지는 문제 해결에 대한 요구가 늘어나고 있다. 대용량 데이터 처리의 경우 각종 분산 파일 시스템과 분산/병렬 컴퓨팅 기술들이 이미 많이 사용되고 있으며, 계산 집약적 연산 처리의 경우에도 GPGPU 활용 기술의 발달로 보편화되는 추세에 있다. 하지만 대용량 데이터와 계산 집약적 연산 이 두 가지 특성을 모두 가지는 문제를 처리하기 위해서는 많은 제약 사항들을 해결해야 하는데, 본 논문에서는 이에 대한 대안으로 분산 컴퓨팅 프레임워크인 Hadoop MapReduce와 Nvidia의 GPU 병렬 컴퓨팅 아키텍처인 CUDA 흘 연동하는 방안을 제시하고, 이를 밀집행렬(dense matrix) 연산에 적용했을 때 얻을 수 있는 성능 개선 효과에 대해 소개하고자 한다.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.197.1-197
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• 2003

• Plant Resources
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• v.7 no.2
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• pp.159-162
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• 2004

Many higher fungi were collected at Mt.Sunun, Mt.Kangchon and Mt.Moak from June, 1991 to April, 2003. They were identified and surveyed with references. According to the result, Cordyceps clavata, C. cocciniocapite, C. ryougamimontanna, C. tuberculate J. moelleri and C. yakushimensis are unrecorded species to Korea. They were designed Korean common names by authors. Common names: Cordyceps clavata, C. cocciniocapite, C. ryougamimontanna, C. tuberculate f moelleri, C. yakushimensis, unrecorded species, common names.

• Korean journal of applied entomology
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• v.36 no.4
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• pp.311-316
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• 1997

This study was conducted to evaluate the effect of temperatures on the egg and nymphal development andadult longevity of green mirid bug, Cvrtorhinus lividipennis Reuter. In addition, predation on eggs of brownplanthopper, Nilupurvurcz lugens ~t:l and small brown planthopper, L~orlelphux .striatellus Fallen by C.lividipennis were studied at different temperatures. Hatchability of C. lividipennis was about 96% at 23"C,88% at 26"C, 75% at 29$^{\circ}$C and 64% at 32$^{\circ}$C. Egg duration of C. lividipmnis was 1 1.0 days at 23"C, 10.0 at26"C, 6.7 days at 29$^{\circ}$C and 5.6 days at 32$^{\circ}$C. Nymphal duration of C. 1i1~idiperzni.ws as 13.7 days at 23"C,12.7 days at 26$^{\circ}$C. 10.2 days at 29$^{\circ}$C and 9.1 days at 32$^{\circ}$C regardless of food sources. Nymphaldevelopment was the shortest at 4th instar and the longest at 1st instar irrespective of temperatures and foodsources. Adult longevity of C. livirlipennis was was about 22.0 to 23.5 days at 23$^{\circ}$C. 19.0 to 20.0 days at26"C, 16.0 to 17.0 days at 2Y0C, and 1 1.0 to 12.0 days at 32$^{\circ}$C. There was no significant difference in adultlongevities on food sources. Number of eggs comsumed by adult C. lividipennis were about 56 to 61 and 56to 57,56 to 60 and 47 to 49,43 to 46 and 40 to 42, and 28 to 30 and 26 to 27 at 23'C. 20$^{\circ}$C. 29$^{\circ}$C and 32"C,respectively. Egg consumption by adult C. lividiprrznis was slightly higher at female and on N. lugens eggthan at male and on L. striatellus egg. Dail 2.0 to 3.0 eggs were consumed by adult C. lividipc,nni.s.ail 2.0 to 3.0 eggs were consumed by adult C. lividipc,nni.s.

• Journal of the Korean Society of Food Culture
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• v.19 no.1
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• pp.30-42
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• 2004

In order to examine the effect of the combination of fermented temperature and time on Baechu kimchi in a kimchi refrigerator, Baechu kimchi was fermented at four different modes of the fermentation temperature and time for 16 weeks and analyzed the properties of Baechu kimchi. The pH, Baechu kimchi fermented at $20^{\circ}C$ for 24 hours/stored at $-1^{\circ}C$ and Baechu kimchi fermented at $5^{\circ}C$ for 6 days/stored at $-1^{\circ}C$, decreased rapidly during first week and then decreased very slowly. The hardness and the chewiness of Baechu kimchi fermented at high temperature were higher and the values were decreased when the fermentation continued. In sensory evaluation, carbonated flavor in Baechu kimchi fermented at $20^{\circ}C$ for 24 hours/stored at $-1^{\circ}C$ was the best after 4 weeks, and Baechu kimchi fermented at $5^{\circ}C$ for 3 days or 6 days/stored at $-1^{\circ}C$ was the best after 8 weeks. The scores for sourness were the highest on 8 weeks and 12 weeks in kimchi fermented at $20^{\circ}C$ for 24 hours/stored at $-1^{\circ}C$ and fermented at $5^{\circ}C$ for 3 days or 6 days/stored at $-1^{\circ}C$, respectively. The sensory scores for overall acceptability were the best on 4 weeks and 8 week in kimchi fermented at $20^{\circ}C$ for 24 hours/stored at $-1^{\circ}C$ and fermented at $5^{\circ}C$ for 3 days or 6 days/stored at $-1^{\circ}C$, respectively. Total microbial count was increased as the temperature of fermentation increased. Counts of Leuconostoc spp. reached to the highest after 6 days and counts of Lactobacillus spp reached to the highest after 5 days in kimchi fermented at $20^{\circ}C$ for 24 hours/stored at $-1^{\circ}C$. From these results, it was concluded that it required 4 weeks to eat most edible Baechu kimchi in kimchi refrigerator fermented at $20^{\circ}C$ for 24 hours/stored at $-1^{\circ}C$, and 8 weeks to eat most edible Baechu kimchi in kimchi refrigerator fermented at $5^{\circ}C$ for 3 days or 6 days/stored at $-1^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.34 no.5
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• pp.535-543
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• 1997

The surface of SiC particles were partially oxidized to produce SiO2 layers on the SiC particles to prepare Al2O3/SiC composite by formation of mullite bonds between the grains of Al2O3 and SiC during sintering at 1$600^{\circ}C$. This process is considered to enable the sintering of Al2O3/SiC composite at lower temperature and also to relieve the stress, produced by thermal expansion mismatch between Al2O3 and SiC. In fact, Al2O3/SiC composite prepared by oxidation of SiC was observed to be more effectively sintered and densified at lower temperature. Maximum density, flexural strength and microhardness were obtained with 5.65 vol% of mullite content in Al2O3/SiC composite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.274-274
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• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.275-275
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• 2008

This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

• The Korean Journal of Ecology
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• v.6 no.2
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• pp.128-141
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• 1983

The districbution of $C_3; and; C_4$ type plants in Korea were studied. In the standpoint of photosynthetic types, plant distribution in Korea is classified as $C_3; and; C_4$ type plant zones. The forest destroyed by man interference, cultivating areas, and seashore areas are characterized by the dominant of $C_4$ type plants.(Figs. 2, 3, 4, 5) According to the results of this study, $C_3; and; C_4$ type plant distribution in Korea has a great relation to the habitat of plant vegetation (Table 1). The arid areas were in high proportion of C4 flora percenntages, while the well-developed woody forests or the vegetation of humid areas were in lower proportion(Fig.8).