• Proceedings of the Korean Geotechical Society Conference
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• 1999.03a
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• pp.373-380
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• 1999

Consolidation settlements of soft clay are often large and potentially damaging to the structures. Currently, large-scale construction projects for airport and harbor etc. are in progress in Korea and many of these structures will be constructed on thick and soft clay layers. For this kind of ground condition, evaluation of consolidation settlement is required at every design and construction stages, and the magnitude of secondary compression appears to be larger than expected. Generally, the magnitude of secondary compression is evaluated by laboratory and in-situ consolidation tests or by empirical $C_{a/}$ $C_{c}$, relationship. The use of empirical value $C_{a/}$ $C_{c}$ may be economical, fast and powerful tool in estimating secondary consolidation settlement. However, the databases of the $C_{a/}$ $C_{c}$, for typical soft clays in Korea are insufficient. The purpose of this study is to investigate the relationship of $C_{a/}$ $C_{c}$ on marine clay near the southern sea in Korea. A series of incremental loading consolidation tests with measurement of pore water pressure were performed. It was found that the $C_{a/}$ $C_{c}$ of undisturbed marine clay is 0.0397. This value is similar to that proposed by Mesri and Castro(1987) on inorganic clay and silt. and silt. and silt.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.364-367
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• 2012

In this paper, AXI4 BUS was implemented using Verilator and C/C++ for verification of SoC platform H/W IP which is based on AXI4 BUS. In this paper we proposed a method to verify the AXI4 BUS based SoC platform H / W IP by implemented AXI4 BUS on PC using Verilator and C/C++. The result shows AXI4 BUS based H/W IP that is verified by implemented AXI4 BUS is to perform the same behavior on FPGA environment.

• Proceedings of the Korean Geotechical Society Conference
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• 1999.02a
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• pp.70-77
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• 1999

Consolidation settlements on soft clay are often large and potentially damaging to structures. Currently, large-scale projects are in progress in Korea. These structures will be constructed on both thick and soft clay layers, and so the accurate evaluation of magnitude of settlement is required at every step in design and construction. Especially, secondary compression play an important role in consolidation settlements on soft clay. Generally, the magnitudes of secondary compression are evaluated by laboratory and in-situ consolidation tests or by empirical $C_{a/}$ $C_{c}$ relationships. The empirical $C_{a/}$ $C_{c}$ may not be only economical, but a fast and powerful tool in estimating secondary consolidation settlement. However, databases of the $C_{a/}$ $C_{c}$ relationship for sites in Korea are currently insufficient. The purpose of this study is to investigate the relationship of $C_{a/}$ $C_{c}$, on marine clay near the southern sea in Korea. In this study a series of incremental loading consolidation tests (measuring base pore water pressure) are performed. It was found that the $C_{a/}$ $C_{c}$ on undisturbed marine clay equaled 0.0397. This value is similar to the value proposed by Mesri and Castro(1987) for inorganic clay and silt. and silt. and silt.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.2
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• pp.101-109
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• 2002

A complex chemical equilibrium analysis was performed to study the hot-wall CVD process of the SiC/C functionally gradient materials (FGM). Thermochemical calculations of the Si-C-H-Cl system were carried out, and the effects of process variables(deposition temperature, reactor pressure, C/[Si+C] and H/[Si+C] ratios in the source gas) on the composition of deposited layers and the deposition yield were investigated. The CVD phase diagrams of the SiC/C FGM deposition were obtained, and the optimum process windows were estimated from the results.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2005.04a
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• pp.102-105
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• 2005

The mechanical properties of $SiC_f/SiC$ composites reinforced with continuous SiC fiber have been investigated in conjunction with the detailed analysis of their microstructures. Especially, the effect of test temperature on the characterization of $SiC_f/SiC$ composites was examined. In this composite system, a braiding Hi-Nicalon SiC fibric was selected as a reinforcement. $SiC_f/SiC$ composites have been fabricated by the reaction sintering process, using the complex matrix slurry with a constant composition ratio of SiC and C particles. The characterization of $RS-SiC_f/SiC$ composites was investigated by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, the high temperature applicability of $RS-SiC_f/SiC$ composites was discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.197-206
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• 1997

A SiC epilayer on the 6H-SiC crystal substrate was grown by chemical vapor deposition (CVD). The crystal structure of the SiC epilayer was investigated by using the X-ray diffraction patterns and the Roman scattering spectroscopy. The SiC epilayer on the 6H-SiC substrate was grown to be homoepilayer by CVD. In order to distinguish a certain SiC polytype mixed in the SiC crystal grown by the modified Lely method, we have calculated the X-ray diffraction intensities and Brags angles of the typical SiC crystal powders. By comparing the measured X-ray diffraction pattern with the calculated ones, it was identified that the SiC crystal grown by the modified Lely method was the 6H-SiC crystal mixed some 15R-SiC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.156-161
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• 2007

This paper describes the characteristics of polycrystalline ${\beta}$ or 3C (cubic)-SiC (silicon carbide) thin films heteroepitaxailly grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC film was deposited by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane: $Si_{2}(CH_{3}_{6})$ single precursor. The deposition was performed under various conditions to determine the optimized growth conditions. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_{2}$ were measured by SEM (scanning electron microscope). Finally, depth profiling was invesigated by GDS (glow discharge spectrometer) for component ratios analysis of Si and C according to the grown 3C-SiC film thickness. From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therfore, the poly 3C-SiC thin film is suitable for extreme environment, Bio and RF MEMS applications in conjunction with Si micromaching.

• Carbon letters
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• v.6 no.2
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• pp.71-78
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• 2005

Anti-oxidation coatings are the key technique for carbon/carbon (C/C) composites used as the thermal structural materials. The microstructure and oxidation behavior of several kinds of high-performance ceramic coatings for C/C composites prepared in Northwestern Polytechnical University were introduced in this paper. It showed that the ceramic coatings such as SiC, Si-$MoSi_2$, SiC-$MoSi_2$, $Al_2O_3$-mullite-SiC and SiC/yttrium silicate/glass coatings possessed excellent oxidation resistance at high temperatures, and some of these coatings were characterized with excellent thermal shock resistance. The SiC-$MoSi_2$ coating system has the best oxidation protective property, which can effectively protect C/C composites from oxidation up to 1973 K. In addition, the protection and failure reasons of some coatings at high temperature were also provided.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.685-696
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• 1995

The most important techniques in the synthesis of SiC/C function gradient material (FGM) are to control the SiC/C ratio and to obtain the moderate deposition rate. For these, various gas systems and flow rates were attempted and evaluated. It turned out that the CH4＋SiCl4＋H2 system was suitable for the deposition of SiC-rich layers, the C3H8＋SiCl4＋Ar system for the deposition of carbon-rich layers, and the C3H8＋SiCl4＋H2＋Ar system was good to deposit the layers between them.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.655-661
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• 1999

${\beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${\beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${\beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${\beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${\beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.